2SD1253P [ETC]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 4A I（C ） | TO- 221VAR\n
| 型号： | 2SD1253P |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR
|
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
Complementary to 2SB0930 (2SB930) and 2SB0930A (2SB930A)
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
1.5max.
1.1max.
0.5max.
●
Low collector to emitter saturation voltage VCE(sat)
●
N type package enabling direct soldering of the radiating fin to
0.8±0.1
the printed circuit board, etc. of small electronic equipment.
2.54±0.3
5.08±0.5
Absolute Maximum Ratings (T =25˚C)
■
C
1:Base
2:Collector
3:Emitter
1
2
3
Parameter
Symbol
Ratings
Unit
N Type Package
Collector to
2SD1253
2SD1253A
2SD1253
60
VCBO
V
Unit: mm
base voltage
Collector to
80
8.5±0.2
6.0±0.3
3.4±0.3
1.0±0.1
60
VCEO
V
emitter voltage 2SD1253A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
5
V
A
A
8
IC
4
40
R0.5
R0.5
0.8±0.1
0 to 0.4
2.54±0.3
Collector power TC=25°C
1.1 max.
PC
W
5.08±0.5
dissipation
Ta=25°C
1.3
1:Base
2:Collector
3:Emitter
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
400
400
700
700
1
Unit
2SD1253
2SD1253A
2SD1253
2SD1253A
VCE = 60V, VBE = 0
µA
current
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
µA
mA
V
Emitter cutoff current
Collector to emitter 2SD1253
voltage 2SD1253A
60
80
40
15
IC = 30mA, IB = 0
*
hFE1
VCE = 4V, IC = 1A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 4A, IB = 0.4A
1.5
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 5V, IC = 0.5A, f = 1MHz
20
0.4
1.2
0.5
MHz
µs
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
R
Q
P
40 to 90
70 to 150
120 to 250
Note) The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1253, 2SD1253A
PC — Ta
IC — VCE
IC — VBE
50
6
5
4
3
2
1
0
8
TC=25˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
VCE=4V
7
25˚C
IB=150mA
100mA
(1)
40
30
20
10
0
TC=100˚C
–25˚C
6
5
4
3
2
1
0
80mA
60mA
40mA
30mA
20mA
10mA
(2)
(3)
5mA
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=10
VCE=4V
VCE=10V
f=1MHz
TC=25˚C
30
10
3000
3000
1000
1000
3
1
300
100
300
100
25˚C
TC=100˚C
–25˚C
TC=100˚C
0.3
0.1
30
10
30
10
25˚C
–25˚C
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
t=10ms
1ms
ICP
IC
3
1
300ms
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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2001 MAR
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