2SD1010S [ETC]
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-92 ; 晶体管| BJT | NPN | 40V V（ BR ） CEO | 50MA I（C ） | TO- 92\n
| 型号： | 2SD1010S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-92
|
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
5.0±0.2
Features
High foward current transfer ratio hFE
■
●
.
●
●
●
Low collector to emitter saturation voltage VCE(sat)
.
High emitter to base voltage VEBO
.
Low noise voltage NV.
Absolute Maximum Ratings (Ta=25˚C)
■
0.45–+00..12
0.45–+00..12
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
1.27
1.27
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
50
40
V
1 2 3
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
15
V
100
mA
mA
mW
˚C
2.54±0.15
IC
50
Collector power dissipation
Junction temperature
Storage temperature
PC
300
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
1
Unit
VCB = 20V, IE = 0
nA
µA
V
Collector cutoff current
ICEO
VCE = 20V, IB = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
50
40
IC = 1mA, IB = 0
V
IE = 10µA, IC = 0
15
V
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
400
1000
0.05
200
2000
0.2
Collector to emitter saturation voltage VCE(sat)
V
Transition frequency
fT
MHz
Noise voltage
NV
80
mV
*hFE Rank classification
Rank
hFE
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000
1
Transistor
2SD1010
PC — Ta
IC — VCE
IC — VBE
500
400
300
200
100
0
160
140
120
100
80
120
100
80
60
40
20
0
VCE=10V
Ta=25˚C
25˚C
Ta=75˚C
–25˚C
IB=100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
60
40
20µA
10µA
20
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
1800
250
200
150
100
50
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
1500
1200
900
600
300
0
3
1
Ta=75˚C
25˚C
–25˚C
0.3
0.1
Ta=75˚C
–25˚C
25˚C
0.03
0.01
0
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
NV — IC
NV — VCE
8
100
80
60
40
20
0
100
80
60
40
20
0
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
7
6
5
4
3
2
1
0
Rg=100kΩ
Rg=100kΩ
22kΩ
5kΩ
22kΩ
5kΩ
IC=1mA
GV=80dB
Function=FLAT
Ta=25˚C
1
3
10
30
100
0.01
0.03
0.1
0.3
1
1
3
10
30
100
( )
V
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC mA
2
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2001 MAR
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