2SD0968/2SD0968A(2SD968/2SD968A) [ETC]
2SD0968. 2SD0968A (2SD968. 2SD968A) - NPN Transistor ; 2SD0968 。 2SD0968A （ 2SD968 2SD968A ） - NPN晶体管\n
| 型号： | 2SD0968/2SD0968A(2SD968/2SD968A) |
| 厂家： | 
ETC |
| 描述： | 2SD0968. 2SD0968A (2SD968. 2SD968A) - NPN Transistor
|
| 文件： | 总3页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Unit: mm
Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
1.5 0.1
4.5 0.1
1.6 0.2
Features
High collector to emitter voltage VCEO
I
G
.
G
Large collector power dissipation PC.
45°
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.4 0.08
0.4 0.04
0.5 0.08
1.5 0.1
3.0 0.15
2
Absolute Maximum Ratings (Ta=25˚C)
I
3
1
Parameter
2SD0968
Symbol
Ratings
Unit
Collector to
100
VCBO
V
marking
base voltage
Collector to
2SD0968A
2SD0968
2SD0968A
120
100
VCEO
V
emitter voltage
120
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
5
V
A
1
(2SD0968)
Marking symbol : W
IC
0.5
1
A
(2SD0968A)
V
*
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCEO
VEBO
Conditions
IC = 100µA, IB = 0
min
100
120
5
typ
max
Unit
V
Collector to emitter 2SD0968
voltage
2SD0968A
Emitter to base voltage
IE = 10µA, IC = 0
V
VCE = 10V, IC = 150mA*2
VCE = 5V, IC = 500mA*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
90
220
*1
hFE1
hFE2
Forward current transfer ratio
50
100
0.2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
0.6
1.2
V
V
0.85
120
11
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
90 ~ 155
WQ
130 ~ 220
WR
2SD0968
Marking
Symbol
Note.) The Part numbers in the Parenthesis show conventional
part number.
2SD0968A
VQ
VR
1
Transistor
2SD0968, 2SD0968A
PC — Ta
IC — VCE
IC — IB
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
VCE=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
12mA
10mA
8mA
6mA
4mA
2mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
3
6
9
12
15
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB mA
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
10
100
300
250
200
150
100
50
IC/IB=10
IC/IB=10
VCE=10V
3
1
30
10
Ta=75˚C
25˚C
0.3
0.1
3
1
Ta=75˚C
25˚C
–25˚C
25˚C
Ta=–25˚C
–25˚C
75˚C
0.03
0.01
0.3
0.1
0.003
0.001
0.03
0.01
0
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Collector current IC mA
fT — IE
Cob — VCB
200
160
120
80
50
40
30
20
10
0
VCB=10V
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
40
0
–1
–3
–10
–30
–100
1
3
10
30
100
(
)
( )
Collector to base voltage VCB V
Emitter current IE mA
2
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2001 MAR
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