2SD0637S [ETC]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-71 ; 晶体管| BJT | NPN | 50V V( BR ) CEO | 100MA I(C ) | SC- 71\n型号: | 2SD0637S |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-71
|
文件: | 总4页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistor
2SD0637 (2SD637)
Silicon NPN epitaxial planer type
For low-power general amplification
Unit: mm
6.9 0.1
2.5 0.1
1.0
1.5
1.5 R0.9
Features
High foward current transfer ratio hFE
R0.9
ꢀ
ꢁ
.
ꢁ
ꢁ
Low collector to emitter saturation voltage VCE(sat)
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
.
R0.7
0.85
0.55 0.1
0.45 0.05
Absolute Maximum Ratings (Ta=25˚C)
ꢀ
3
2
1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
60
50
V
2.5
2.5
7
V
200
mA
mA
mW
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
IC
100
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
ꢀ
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
µA
V
VCB = 20V, IE = 0
VCE = 20V, IB = 0
1
1
Collector cutoff current
ICEO
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
60
50
7
IC = 2mA, IB = 0
V
IE = 10µA, IC = 0
V
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
160
460
0.5
Collector to emitter saturation voltage VCE(sat)
0.3
150
3.5
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
Collector output capacitance
Cob
*hFE Rank classification
Rank
hFE
Q
R
S
160 ~ 260
210 ~ 340
290 ~ 460
Note.) The Part number in the Parenthesis shows conventional part number.
1
Transistor
2SD0637
PC — Ta
IC — VCE
IB — VBE
500
400
300
200
100
0
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
Ta=25˚C
IB=160µA
VCE=10V
Ta=25˚C
140µA
120µA
100µA
80µA
60µA
40µA
20µA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
IC — VBE
IC — IB
VCE(sat) — IC
200
160
120
80
240
100
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
200
160
120
80
3
1
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
Ta=75˚C
40
40
–25˚C
0.03
0.01
0
0
0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
800
1000
0.1
0.3
1
3
10
30
100
( )
V
(
)
(
)
Base to emitter voltage VBE
Base current IB µA
Collector current IC mA
hFE — IC
fT — IE
Cob — VCB
600
500
400
300
200
100
0
300
240
180
120
60
12
10
8
IE=0
f=1MHz
Ta=25˚C
VCE=10V
VCB=10V
Ta=25˚C
Ta=75˚C
25˚C
6
–25˚C
4
2
0
0
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
1
3
10
30
100
(
)
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
Emitter current IE mA
2
Transistor
2SD0637
NV — IC
h Parameter — IC
240
200
160
120
80
100
VCE=5V
f=270Hz
VCE=10V
Ta=25˚C
Function=FLAT
30
10
Rg=100kΩ
hfe (✕100)
3
1
hoe (10–1µS)
22kΩ
4.7kΩ
hre (✕10–4
)
40
0.3
0.1
hie (✕10kΩ)
0
10
30
100
300
1000
0.1
0.3
1
3
10
(
)
(
)
Collector current IC µA
Collector current IC mA
3
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istics and applied circuit examples of the products. It does not constitute the warranting of industrial
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2001 MAR
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