2SC5508(NE662M04) [ETC]

Discrete ; 分离\n

2SC5508(NE662M04)


型号：	2SC5508(NE662M04)
厂家：	ETC
描述：	Discrete 分离\n
文件：	总15页 (文件大小：82K)
下载：	下载PDF数据表文档文件

2SC5508-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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32 RENESAS

2SC5508-FB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

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0 NEC

2SC5508-FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

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0 NEC

2SC5508-T2

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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18 RENESAS

2SC5508-T2

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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246 NEC

2SC5508-T2-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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35 RENESAS

2SC5508-T2B

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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58 RENESAS

2SC5508-T2B-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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57 RENESAS

2SC5508-T2B-A-FB

RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC5508-T2B-A-YFB

RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC5508-T2FB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

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0 NEC

2SC5508-T2FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

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0 NEC

2SC5509

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

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22 RENESAS

2SC5509

NPN SILICON RF TRANSISTOR

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124 NEC

2SC5509

X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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1 RENESAS

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