2SC5336RE [ETC]
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 ; 晶体管| BJT | NPN | 12V V（ BR ） CEO | 100MA I（C ） | TO- 243\n
| 型号： | 2SC5336RE |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
|
| 文件： | 总8页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
•
•
High gain:
S
21e 2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5336
25 pcs (Non reel)
1 kpcs/reel
• Magazine case
2SC5336-T1
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
12
V
3.0
V
100
mA
W
P
tot Note
1.2
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
The mark • shows major revised points.
1996, 2001
©
Printed in Japan
2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
h
VCB = 10 V, IE = 0 mA
VBE = 1 V, IC = 0 mA
= 10 V, I = 20 mA
–
–
–
–
1.0
1.0
250
µA
µA
–
FE Note 1
CE
C
V
50
120
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 10 V, IC = 20 mA
= 10 V, I = 20 mA, f = 1 GHz
–
–
–
–
–
6.5
12
–
–
GHz
dB
2
S
21e
V
CE
C
NF
NF
C
VCE = 10 V, IC = 7 mA, f = 1 GHz
VCE = 10 V, IC = 40 mA, f = 1 GHz
1.1
1.8
0.5
–
dB
Noise Figure (2)
3.0
0.8
dB
re Note 2
CB
E
Reverse Transfer Capacitance
V
= 10 V, I = 0 mA, f = 1 MHz
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
RH
RH
RF
RF
RE
RE
Marking
hFE Value
50 to 100
80 to 160
125 to 250
2
Data Sheet P10938EJ2V0DS
2SC5336
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
Mounted on Ceramic Substrate
f = 1 MHz
(16 cm2 × 0.7 mm (t) )
3.0
2.0
2.0
1.0
1.0
0.5
0.3
0
50
100
150
1
3
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
200
100
50
10
5
V
CE = 10 V
V
CE = 10 V
f = 1 GHz
3
2
1
20
10
0.5
0.3
0.5
1
5
10
(mA)
50
1
3
5
10
20
30 50
Collector Current I
C
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. FREQUENCY
15
V
CE = 10 V
V
CE = 10 V
I = 20 mA
C
f = 1 GHz
2
|S21e
|
20
10
0
10
5
MAG
0
0.2
0.4
0.6 0.8 1.0 1.4 2.0
1
3
5
10
20 30 50
(mA)
100
Frequency f (GHz)
Collector Current I
C
3
Data Sheet P10938EJ2V0DS
2SC5336
NOISE FIGURE vs.
COLLECTOR CURRENT
IM
3
, IM vs. COLLECTOR CURRENT
2
7
6
5
4
3
2
–100
–90
–80
–70
–60
–50
V
V
CE = 10 V,
V
CE = 10 V
in = 100 dBµV/50 Ω
f = 1 GHz
Rg
= Re = 50 Ω
IM
IM
2
: f = 90 + 100 MHz
3
: f = 2 × 200 – 190 MHz
IM
3
IM2
1
0
–40
–30
0.5
1
5
10
50
20
30
40
50
60
(mA)
70
Collector Current I
C
(mA)
Collector Current I
C
Remark The graphs indicate nominal characteristics.
4
Data Sheet P10938EJ2V0DS
2SC5336
S-PARAMETERS
VCE = 10 V, IC = 20 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.519
0.413
0.413
0.345
0.331
0.320
0.302
0.296
0.283
0.285
0.265
0.260
0.263
0.242
0.252
0.253
0.253
0.257
0.262
0.273
−74.5
−112.9
−133.4
−145.7
−153.8
−159.6
−166.8
−169.2
−173.2
−179.8
175.2
30.931
18.965
13.324
10.164
8.177
6.834
5.832
5.107
4.600
4.200
3.930
3.979
3.741
3.115
2.844
2.595
2.420
2.305
2.171
2.049
131.9
111.5
101.9
95.9
91.8
89.1
86.7
84.3
83.1
82.3
80.8
78.5
68.6
66.6
65.7
64.1
63.7
63.0
62.6
61.2
0.017
0.031
0.038
0.045
0.055
0.064
0.074
0.077
0.088
0.097
0.100
0.109
0.114
0.119
0.133
0.140
0.158
0.165
0.172
0.177
60.6
61.9
65.1
69.8
71.8
70.9
73.9
74.4
71.2
74.5
76.3
75.9
76.8
78.3
82.0
81.0
80.9
82.2
80.5
78.3
0.752
0.570
0.465
0.428
0.436
0.438
0.434
0.429
0.436
0.455
0.467
0.529
0.551
0.509
0.510
0.496
0.515
0.518
0.536
0.524
−30.2
−39.7
−39.8
−40.1
−41.1
−43.5
−47.5
−47.8
−46.5
−47.8
−46.8
−47.4
−55.8
−55.8
−58.5
−55.2
−54.8
−56.5
−58.6
−61.5
174.1
166.0
163.0
160.1
154.0
149.9
147.2
143.0
141.5
VCE = 10 V, IC = 40 mA
Frequency
S11
S21
S12
S22
(GHz)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
MAG.
ANG.
(deg.)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.378
0.317
0.308
0.299
0.297
0.288
0.274
0.261
0.255
0.260
0.243
0.239
0.245
0.216
0.235
0.243
0.233
0.242
0.249
0.260
−97.1
−131.8
−150.1
−158.7
−165.5
−169.2
−173.7
−177.3
178.9
173.0
169.4
169.3
160.3
157.8
155.3
148.8
146.0
144.6
141.9
140.4
32.908
18.819
12.955
9.775
7.899
6.586
5.607
4.879
4.435
4.024
3.801
3.827
3.587
2.980
2.726
2.537
2.348
2.200
2.073
1.986
123.3
106.0
97.5
93.1
89.8
87.6
85.2
83.5
82.2
81.4
80.6
78.2
68.4
66.0
66.1
64.0
64.2
63.5
63.3
61.7
0.017
0.027
0.035
0.042
0.052
0.061
0.071
0.081
0.092
0.095
0.098
0.109
0.117
0.125
0.137
0.143
0.159
0.163
0.171
0.184
71.1
71.2
71.8
78.1
78.5
79.1
77.4
76.4
76.5
77.6
77.1
78.3
78.0
80.3
86.5
80.6
81.2
80.4
81.7
77.5
0.665
0.487
0.398
0.393
0.399
0.407
0.400
0.415
0.399
0.440
0.441
0.494
0.517
0.486
0.500
0.474
0.496
0.491
0.534
0.535
−34.7
−38.7
−38.5
−36.9
−37.6
−39.9
−44.6
−47.4
−46.2
−44.3
−45.2
−46.2
−55.4
−54.5
−59.0
−53.7
−56.8
−53.6
−58.0
−61.3
5
Data Sheet P10938EJ2V0DS
2SC5336
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
1.5±0.1
C
B
E
E
0.46
±0.06
0.25±0.02
0.42±0.06
0.42±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
6
Data Sheet P10938EJ2V0DS
2SC5336
[MEMO]
7
Data Sheet P10938EJ2V0DS
2SC5336
•
The information in this document is current as of August, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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