2SC461A [ETC]
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 ; 晶体管| BJT | NPN | 30V V（ BR ） CEO | 100MA I（C ） | TO- 92\n
| 型号： | 2SC461A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92
|
| 文件： | 总13页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC460, 2SC461
Silicon NPN Epitaxial Planar
ADE-208-1046 (Z)
1st. Edition
Mar. 2001
Application
•
•
2SC460 high frequency amplifier, mixer
2SC461 VHF amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC460, 2SC461
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SC460
2SC461
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
30
30
30
V
5
5
V
100
100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
200
200
Tj
150
150
Tstg
–55 to +150
–55 to +150
2
2SC460, 2SC461
Electrical Characteristics (Ta = 25°C)
2SC460
2SC461
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
30
30
5
—
—
—
—
—
—
30
30
5
—
—
—
—
—
—
V
V
V
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
—
—
—
35
—
—
—
0.5
0.5
—
—
—
35
—
—
—
0.5
0.5
µA
µA
V
VCB = 18 V, IE = 0
VEB = 2 V, IC = 0
Base to emitter voltage VBE
DC current transfer ratio hFE*1
0.63 0.75
0.63 0.75
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
—
200
1.1
—
200
1.1
Collector to emitter
saturation voltage
VCE(sat)
0.6
0.6
V
Gain bandwidth product fT
—
—
230
1.8
—
—
—
230
1.8
—
MHz VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
3.5
3.5
pF
dB
dB
dB
VCB = 10 V, IE = 0,
f = 1 MHz
10.7 MHz power gain
100 MHz power gain
Noise figure
PG
PG
NF
26
—
—
29
—
—
—
—
—
13
—
—
17
—
—
—
—
VCE = 6 V, IE = –1 mA
f = 10.7 MHz
VCE = 6 V, IE = –1 mA
f = 100 MHz
2.0
VCE = 6 V, IE = –1 mA
f = 1MHz
Rg = 500Ω
Note: 1. The 2SC460 and 2SC461 are grouped by hFE as follows.
A
B
C
35 to 70
60 to 120
100 to 200
3
2SC460, 2SC461
Small Signal y Parameters (VCE = 6 V, IC = 1 mA, Emitter Common)
2SC460A,
2S461A
2SC460B,
2SC461B
2SC460C,
2SC461C
Item
Symbol f
yie
Unit
Input admittance
455 kHz 0.58 + j0.074
4.5 MHz 0.65 + j0.79
10.7 MHz 0.91 + j2.0
100 MHz 7.4 + j14
455 kHz –j0.003
4.5 MHz –j0.04
0.42 + j0.068
0.50 + j0.7
0.61 + j1.9
5.6 + j12
–j0.003
0.30 + j0.051
0.35 + j0.57
0.39 + j1.3
3.8 + j6.0
–j0.003
mS
Reverse transfer admittance yre
Forward transfer admittance yfe
mS
mS
–j0.04
–j0.04
10.7 MHz –j0.13
–j0.13
–j0.13
100 MHz –j1.0
–j1.0
–j1.0
455 kHz 38 – j0.1
4.5 MHz 35 – j1.0
10.7 MHz 34 – j2.5
100 MHz 28 – j20
37 – j0.1
35 – j1.2
34 – j2.5
28 – j19
37 – j0.2
34 – j1.8
33 – j4.5
20 – j19
Output admittance
yoe
455 kHz 0.0098 + j0.009 0.013 + j0.009 0.016 + j0.012 mS
4.5 MHz 0.02 + j0.09
10.7 MHz 0.11 + j0.4
100 MHz 0.40 + j1.7
0.023 + j0.092 0.03 + j0.10
0.11 + j0.4
0.50 + j2.0
0.12 + j0.4
0.83 + j2.0
4
2SC460, 2SC461
Typical Output Characteristics
Maximum Collector Dissipation Curve
10
8
250
200
150
100
50
80
60
6
40
4
20 µA
2
IB = 0
12
0
4
8
16
20
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
VCE = 6 V
100
80
60
40
20
0
10
8
6
4
2
VCE = 6 V
0
0.2
0.4
0.6
0.8
1.0
0.1
0.3
1.0
3
10
30
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
5
2SC460, 2SC461
Noise Figure vs. Collector Current
Noise Figure vs. Collector Current
24
20
16
12
8
5
4
3
2
1
0
VCE = 6 V
Rg = 50 Ω
f = 100 MHz
VCE = 6 V
Rg = 500 Ω
f = 1.0 MHz
4
0
0.2
0.5
1.0
2
5
10
0.1 0.2
0.5 1.0
2
5
10
Collector Current IC (mA)
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Noise Figure vs. Signal Source Resistance
VCE = 6 V
12
10
8
500
400
300
200
100
0
I
C = 1 mA
VCE = 6 V
f = 100 MHz
6
4
2
0
10
20
50 100 200
500 1000
0.1
0.3
1.0
3
10
30
Signal Source Resistance Rg (Ω)
Collector Current IC (mA)
6
2SC460, 2SC461
Gain Bandwidth Product vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector to Emitter Voltage
400
300
200
100
0
500
IC = 1 mA
f = 455 kHz
IC = 1 mA
boe
200
100
50
goe
bie
gie
gie
goe
bie
boe
20
10
1
2
5
10
20
50
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
Collector to Emitter Volgage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector Current
500
500
goe
VCE = 6 V
gie
IC = 1 mA
f = 455 kHz
f = 455 kHz
200
100
50
200
100
50
bre
bie
bfe
gfe
gfe
boe
bfe
bre
boe
bie
gie
20
10
20
10
goe
0.1
0.2
0.5
1.0
2
5
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
7
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
Input/Output Admittance vs.
Collector to Emitter Voltage
500
500
IC = 1 mA
f = 4.5 MHz
VCE = 6 V
f = 455 kHz
bfe
boe
gfe
bre
200
100
50
200
100
50
goe
bre
gie
bie
gie
bie
boe
goe
20
10
20
10
gfe
bfe
1
2
5
10
20
50
0.1
0.2
0.5
1.0
2
5
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Transfer Admittance vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector Current
500
500
VCE = 6 V
f = 4.5 MHz
IC = 1 mA
f = 4.5 MHz
goe
gie
bie
200
100
50
200
100
50
bre
bfe
boe
bre
gfe
bfe
boe
gfe
bie
gie
goe
20
10
20
10
0.1
0.2
0.5
1.0
2
5
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
8
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
Input/Output Admittance vs.
Collector to Emitter Voltage
500
500
200
VCE = 6 V
f = 4.5 MHz
IC = 1 mA
bfe
gfe
f = 10.7 MHz
200
100
50
goe
boe
bie
bre
bre
gie
100 gie
50
bie
goe boe
20
10
20
gfe
bfe
10
1
0.1
0.2
0.5
1.0
2
5
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Input/Output Admittance vs.
Collector Current
Transfer Admittance vs.
Collector to Emitter Voltage
500
500
VCE = 6 V
f = 10.7 MHz
IC = 1 mA
f = 10.7 MHz
goe
gie
200
100
50
200
100
50
bre
bfe
bfe
gie
bre
boe
bie
bie
gie
boe
gie
goe
20
10
20
10
0.1
0.2
0.5
1.0
2
5
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
9
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
Input/Output Admittance vs.
Collector to Emitter Voltage
500
500
bfe
VCE = 6 V
f = 10.7 MHz
IC = 1 mA
f = 100 MHz
gfe
bre
goe
gie
200
100
50
boe
200
100
bre
gie
bie
bie
boe
goe
50
20
10
gfe
20
10
bfe
1
2
5
10
20
50
0.1
0.2
0.5
1.0
2
5
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Input/Output Admittance vs.
Collector Current
Transfer Admittance vs.
Collector to Emitter Voltage
500
500
VCE = 6 V
IC = 1 mA
goe
gie
f = 100 MHz
f = 100 MHz
200
100
50
200
100
50
bre
gfe
bfe
bie
boe
bfe
boe
gfe
bre
bie
gie
20
10
20
10
goe
0.1
0.2
0.5
1.0
2
5
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
10
2SC460, 2SC461
Transfer Admittance vs.
Collector Current
500
VCE = 6 V
f = 100 MHz
bfe
gfe
200
100
50
bre
bre
gfe
20
10
bfe
0.1
0.2
0.5
1.0
2
5
Collector Current IC (mA)
11
2SC460, 2SC461
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.5Max
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
0.25 g
Mass (reference value)
12
2SC460, 2SC461
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
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Singapore 049318
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7/F., North Tower,
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Tel: <1> (408) 433-1990 Germany
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Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
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Tel: <44> (1628) 585000
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Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
13
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