2SC3838KT146N [ETC]
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | SOT-346 ; 晶体管| BJT | NPN | 11V V( BR ) CEO | 50MA I(C ) | SOT- 346\n型号: | 2SC3838KT146N |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | SOT-346
|
文件: | 总2页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC5662 / 2SC4726 / 2SC4083 /
2SC3838K / 2SC4043S
Transistors
High-Frequency Amplifier Transistor
(11V, 50mA, 3.2GHz)
2SC5662 / 2SC4726 / 2SC4083 /
2SC3838K / 2SC4043S
!External dimensions (Units : mm)
!Features
1) High transition frequency. (Typ. fT= 1.5GHz)
2) Small rbb’⋅Cc and high gain. (Typ. 4ps)
3) Small NF.
2SC5662
1.2
0.2 0.8 0.2
(
)
2
(3)
(
)
1
(1) Base
0.15Max.
(2) Emitter
(3) Collector
ROHM : VMT3
2SC4726
! Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
V
V
V
CBO
CEO
EBO
20
11
(
)
1
Collector-emitter voltage
Emitter-base voltage
Collector current
V
(
)
2
3
V
( )
3
I
C
50
mA
0.8
1.6
2SC5662, 2SC4726
0.15
0.2
Collector power
dissipation
2SC4083, 2SC3838K
2SC4043S
P
C
W
0.3
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collector
Junction temperature
Storage temperature
Tj
150
−55~+150
°C
°C
0.1Min.
Tstg
2SC4083
!Packaging specifications and hFE
2SC3838K 2SC4043S
1.25
2.1
Type
2SC4726
EMT3
NP
2SC4083
UMT3
NP
2SC5662
VMT3
NP
Package
SMT3
NP
SPT
P
hFE
(1) Emitter
(2) Base
(3) Collector
Marking
Code
AD
AD
1D
AD
−
TP
T2L
TL
T106
T146
ROHM : UMT3
EIAJ : SC-70
Basic ordering unit
(pieces)
0.1to0.4
8000
3000
3000
3000
5000
Each lead has same dimensions
2SC3838K
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
0.3to0.6
Each lead has same dimensions
4
2
2SC4043S
0.45
0.45
2.5 0.5
(1) Emitter
(2) Collector
(3) Base
5
2
ROHM : SPT
EIAJ : SC-72
( )
1
(
) ( )
3
Taping specifications
2SC5662 / 2SC4726 / 2SC4083 /
2SC3838K / 2SC4043S
Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
20
11
3
−
−
−
−
−
−
−
−
−
0.5
0.5
0.5
V
V
I
I
I
C
C
=
=
10µA
1mA
V
E
=
10µA
I
CBO
EBO
CE(sat)
−
−
−
µA
µA
V
V
CB
=
=
10V
Emitter cutoff current
I
V
EB
2V
Collector-emitter saturation voltage
V
I
C/I
B
=
10mA/5mA
2SC5662, 2SC4726,
2SC4083, 2SC3838K
56
−
180
DC current
transfer ratio
hFE
−
VCE/IC = 10V/5mA
2SC4043S
82
1.4
−
−
−
−
180
−
1.5
12
−
f
T
3.2
0.8
4
GHz
pF
VCE
VCB
VCB
VCE
=
10V , I
10V , I
10V , I
E
E
C
=
=
=
10mA , f
0A , f 1MHz
10mA , f 31.8MHz
500MHz , Rg = 50Ω
= 500MHz
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Cob
Cc
NF
=
=
r
bb'
⋅
ps
=
=
=
3.5
dB
6V , I
C
=
2mA , f
=
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