2SC1573/2SC1573A/2SC1573B [ETC]
2SC1573. 2SC1573A. 2SC1573B - NPN Transistor ; 2SC1573 。 2SC1573A 。 2SC1573B - NPN晶体管\n
| 型号： | 2SC1573/2SC1573A/2SC1573B |
| 厂家： | 
ETC |
| 描述： | 2SC1573. 2SC1573A. 2SC1573B - NPN Transistor
|
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
Unit: mm
For small TV video output
5.9 0.2
4.9 0.2
Complementary to 2SC1573 and 2SA0879 (2SA879)
Features
High collector to emitter voltage VCEO
High transition frequency fT.
I
G
.
G
Absolute Maximum Ratings (Ta=25˚C)
I
0.7 0.1
Parameter
2SC1573
Symbol
Ratings
Unit
2.54 0.15
250
300
Collector to
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
VCBO
V
base voltage
400
200
Collector to
0.45+–0.21
0.45+–00..12
VCEO
300
V
1.27
1.27
emitter voltage
400
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
7
V
mA
mA
W
1
2
3
100
70
Collector power dissipation
Junction temperature
Storage temperature
PC
1
Tj
150
˚C
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = 12V, IE = 0
2
µA
2SC1573
200
300
400
5
Collector to emitter
voltage
2SC1573A VCEO
2SC1573B
IC = 100µA, IB = 0
IE = 1µA, IC = 0
V
V
2SC1573
Emitter to base
voltage
2SC1573A VEBO
7
2SC1573B
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
30
220
1.2
Collector to emitter saturation voltage VCE(sat)
V
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
50
80
5
MHz
2SC1573
10
8
Collector output
capacitance
2SC1573A Cob
2SC1573B
VCB = 10V, IE = 0, f = 1MHz
pF
4
*hFE Rank classification
Rank
hFE
P
Q
R
30 ~ 100
60 ~ 150
100 ~ 220
*2SC1573 for Ranks Q and R only
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistor
2SC1573, 2SC1573A, 2SC1573B
PC — Ta
IC — VCE
IC — VBE
1.2
1.0
0.8
0.6
0.4
0.2
0
120
100
80
60
40
20
0
120
1.8mA
1.6mA
Ta=25˚C
IB=2mA
VCE=10V
25˚C
1.4mA
100
80
60
40
20
0
1.2mA
1.0mA
0.8mA
Ta=75˚C
–25˚C
0.6mA
0.4mA
0.2mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
IC — IB
VCE(sat) — IC
IB — VBE
120
100
80
60
40
20
0
100
3.0
2.5
2.0
1.5
1.0
0.5
0
IC/IB=10
VCE=10V
Ta=25˚C
VCE=10V
Ta=25˚C
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
0
0.2
0.4
0.6
0.8
1.0
(
)
(
)
( )
Base to emitter voltage VBE V
Base current IB mA
Collector current IC mA
hFE — IC
fT — IE
Cob — VCB
360
300
240
180
120
60
160
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
VCB=10V
Ta=25˚C
VCE=10V
IE=0
f=1MHz
Ta=25˚C
Ta=75˚C
25˚C
60
40
–25˚C
20
0
0.1
0
–1
0.3
1
3
10
30
100
–3
–10
–30
–100
1
3
10
30
100
(
)
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
Emitter current IE mA
2
Transistor
2SC1573, 2SC1573A, 2SC1573B
ICBO — Ta
IEBO — Ta
Area of safe operation (ASO)
104
103
102
10
104
103
102
10
1000
Single pulse
Ta=25˚C
VCB=250V
VEB=5V
300
100
ICP
IC
t=10ms
t=1ms
30
10
DC
3
1
0.3
0.1
1
1
0
40
80
120
160
200
0
40
80
120
160
200
)
1
3
10
30
100 300 1000
(
)
(
( )
Collector to emitter voltage VCE V
Ambient temperature Ta ˚C
Ambient temperature Ta ˚C
3
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2001 MAR
相关型号：
2SC1573A
Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
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2SC1573B
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