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2SB929P [ETC]

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR ; 晶体管| BJT | PNP | 60V V（ BR ） CEO | 3A I（C ） | TO- 262VAR\n

2SB929P


元器件型号：	2SB929P
生产厂家：	ETC
描述和应用：	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-262VAR 晶体管\| BJT \| PNP \| 60V V（ BR ） CEO \| 3A I（C ） \| TO- 262VAR\n 晶体晶体管放大器
PDF文件：	总3页 (文件大小：56K)
下载文档：	下载PDF数据表文档文件
型号参数：2SB929P参数

2SB929-P

PNP Transistors

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0 KEXIN

2SB929PQ

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR

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10 ETC

2SB929Q

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR

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6 ETC

2SB929Q

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN

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0 PANASONIC

2SB929-Q

PNP Transistors

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0 KEXIN

2SB929R

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-221VAR

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7 ETC

2SB929TX

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SB929TX

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SB930

Silicon PNP epitaxial planar type(For power amplification)

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25 PANASONIC

2SB930

For Power Amplification

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46 PANASONIC

2SB930

High forward current transfer ratio hFE which has satisfactory linearity.

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11 TYSEMI

2SB930

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, N-G1, 3 PIN

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0 PANASONIC

2SB930_15

PNP Transistors

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0 KEXIN

2SB930A

High forward current transfer ratio hFE which has satisfactory linearity.

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13 TYSEMI

2SB930A

Silicon PNP epitaxial planar type(For power amplification)

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15 PANASONIC

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