2SB1398Q [ETC]
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 5A I(C) | SIP ; 晶体管| BJT | PNP | 25V V（ BR ） CEO | 5A I（C ） | SIP\n
| 型号： | 2SB1398Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 5A I(C) | SIP
|
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SB1398
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
2.5±0.1
1.05
±0.05
6.9±0.1
4.0
(1.45)
0.8
0.7
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
.
●
●
Large collector current IC.
Allowing supply with the radial taping.
0.65 max.
Absolute Maximum Ratings (Ta=25˚C)
0.45+–00..015
■
2.5±0.5 2.5±0.5
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
1
2
3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–30
–25
V
–7
V
Note: In addition to the
lead type shown in
1:Emitter
2:Collector
–8
A
the upper figure, the 3:Base
IC
–5
A
type as shown in
the lower figure is
also available.
MT2 Type Package
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
1.2±0.1
0.65
max.
+
0.1
0.45–0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
CB = –10V, IE = 0
min
typ
max
Unit
nA
nA
V
Collector cutoff current
Emitter cutoff current
V
–100
–100
IEBO
VEB = –5V, IC = 0
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
IC = –1mA, IB = 0
–25
–7
IE = –10µA, IC = 0
V
hFE
VCE = –2V, IC = –2A*2
IC = –3A, IB = –0.1A*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
90
205
–1
*1
Collector to emitter saturation voltage VCE(sat)
V
MHz
pF
Transition frequency
fT
120
Collector output capacitance
Cob
85
*2 Pulse measurement
*1
h
Rank classification
FE
Rank
hFE
P
Q
90 ~ 135
120 ~ 205
1
Transistor
2SB1398
PC — Ta
IC — VCE
IC — VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–6
–5
–4
–3
–2
–1
0
–10
–9
–8
–7
–6
–5
–4
–3
–2
–1
0
Ta=25˚C
VCE=–2V
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
IB=–50mA
–45mA
–40mA
–35mA
25˚C
–30mA
–25mA
Ta=100˚C
–25˚C
–20mA
–15mA
–10mA
–5mA
0
20 40 60 80 100 120 140 160
0
–1
–2
–3
–4
–5
–6
0
– 0.4 – 0.8
–1.2
–1.6
–2.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
hFE — IC
VCE(sat) — IC
fT — IE
500
450
400
350
300
250
200
150
100
50
–100
240
200
160
120
80
IC/IB=30
VCE=–2V
VCB=–6V
Ta=25˚C
–30
–10
–3
–1
Ta=100˚C
25˚C
Ta=100˚C
25˚C
– 0.3
– 0.1
–25˚C
–25˚C
40
– 0.03
– 0.01
0
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
1
3
10
30
100 300 1000
( )
A
(
A
)
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
240
200
160
120
80
IE=0
f=1MHz
Ta=25˚C
40
0
–1
–3
–10
–30
–100
( )
V
Collector to base voltage VCB
2
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2001 MAR
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