2SB1320AS
更新时间：2024-09-18 02:45:05
品牌：ETC
描述：TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SIP
概述
数据手册2SB1320AS 概述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SIP
晶体管| BJT | PNP | 50V V（ BR ） CEO | 100MA I（C ） | SIP\n
2SB1320AS 数据手册
通过下载2SB1320AS数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Transistors
2SB1320A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification
6.9 0.1
4.0
2.5 0.1
1.05
0.05
(1.45)
0.8
0.7
Complementary to 2SD1991A
I Features
0.65 max.
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.45+−00..015
2.5 0.5 2.5 0.5
I Absolute Maximum Ratings Ta = 25°C
1
2
3
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
−60
Unit
V
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
−50
V
−7
V
MT1 Type Package
−200
−100
400
mA
mA
mW
°C
IC
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
1.2 0.1
Tstg
−55 to +150
°C
0.65
max.
+
0.1
0.45−0.05
(HW Type)
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
−1
Unit
µA
µA
V
Collector cutoff current
VCB = −20 V, IE = 0
ICEO
VCE = −20 V, IB = 0
−1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
hFE
IC = −10 µA, IE = 0
−60
−50
−7
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
V
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
160
460
VCE(sat)
fT
−1
V
MHz
pF
80
Collector output capacitance
Cob
3.5
Note) : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no indication for rank.
1
2SB1320A
Transistors
PC Ta
IC VCE
IC IB
500
400
300
200
100
0
−120
−100
−80
−60
−40
−20
0
−60
−50
−40
−30
−20
−10
0
Ta = 25°C
VCE = −5 V
Ta = 25°C
IB = −300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
0
20 40 60 80 100 120 140 160
0
−100
−200
−300
−400
0
−2
−4
−6
−8
−10 −12
(
)
(
)
( )
V
Ambient temperature Ta °C
Base current IB µA
Collector to emitter voltage VCE
IB VBE
IC VBE
VCE(sat) IC
−400
−350
−300
−250
−200
−150
−100
−50
−240
−200
−160
−120
−80
−40
0
−10
IC / IB = 10
VCE = −5 V
Ta = 25°C
VCE = −5 V
−3
−1
25°C
− 0.3
− 0.1
Ta = 75°C
25°C
Ta = 75°C
−25°C
−25°C
− 0.03
− 0.01
− 0.003
− 0.001
0
0
− 0.4
− 0.8
−1.2
−1.6
0
− 0.4 − 0.8 −1.2
−1.6
−2.0
−1
−3
−10 −30 −100 −300 −1 000
( )
V
( )
V
Base to emitter voltage VBE
(m )
Collector current IC A
Base to emitter voltage VBE
hFE IC
fT IE
Cob VCB
8
600
500
400
300
200
100
0
160
140
120
100
80
VCB = −10 V
Ta = 25°C
VCE = −5 V
IE = 0
f = 1 MHz
Ta = 25°C
7
6
5
4
3
2
1
0
Ta = 75°C
25°C
−25°C
60
40
20
0
−1 −2 −3 −5 −10 −20−30 −50 −100
−1
−3
−10 −30 −100 −300 −1 000
0.1 0.3
1
3
10
30
100
( )
V
Collector to base voltage VCB
(m
)
A
(
)
Collector current IC
Emitter current IE mA
2
Transistors
2SB1320A
Cre VCE
NF IE
NF IE
6
5
4
3
2
1
0
6
5
4
3
2
1
0
20
18
16
14
12
10
8
VCB = −5 V
Rg = 50 kΩ
Ta = 25°C
IE = 1 mA
f = 10.7 MHz
Ta = 25°C
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
f = 100 Hz
1 kHz
10 kHz
6
4
2
0
0
−5
−10 −15 −20 −25 −30
− 0.01− 0.03 − 0.1 − 0.3 −1
−3
−10
− 0.1 − 0.2− 0.3− 0.5 −1
−2 −3 −5 –10
( )
V
(
)
(
)
Collector to emitter voltage VCE
Emitter current IE mA
Emitter current IE mA
h Parameter IE
h Parameter VCB
ICBO Ta
100
50
VCB = −5 V
f = 270 Hz
Ta = 25°C
hfe
IE = −2 mA
VCB = −10 V
300
300
200
f = 270 Hz
Ta = 25°C
200
100
50
hfe
100
50
30
20
hoe (µS)
30
20
30
20
10
5
hoe (µS)
10
5
10
5
3
2
hie (kΩ)
hre (×10−4
)
3
2
3
2
hie (kΩ)
hre (×10−4
)
1
1
1
− 0.1 − 0.2− 0.3− 0.5 −1
−2 −3 −5 −10
−1 −2 −3 −5 −10 −20−30 −50 −100
0
25
)
Ambient temperature Ta °C
50
75
100 125 150
(
)
( )
V
(
Emitter current IE mA
Collector to vase voltage VCB
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
2SB1320AS 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SB1320Q | PANASONIC | 暂无描述 | 获取价格 |
|
| 2SB1320R | PANASONIC | 暂无描述 | 获取价格 |
|
| 2SB1320S | PANASONIC | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MT-1-A1, 3 PIN | 获取价格 |
|
| 2SB1321 | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MT1, 3 PIN | 获取价格 |
|
| 2SB1321A | PANASONIC | Silicon PNP epitaxial planer type | 获取价格 |
|
| 2SB1321A-HW | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | 获取价格 |
|
| 2SB1321A-SZ | PANASONIC | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | 获取价格 |
|
| 2SB1321AQ | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | 获取价格 |
|
| 2SB1321AR | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | 获取价格 |
|
| 2SB1321AS | ETC | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | 获取价格 |
|
2SB1320AS 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
