2SA1390B [ETC]
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SPAK ; 晶体管| BJT | PNP | 35V V（ BR ） CEO | 500MA I（C ） | SPAK\n
| 型号： | 2SA1390B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SPAK
|
| 文件： | 总5页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA1390
Silicon PNP Epitaxial
ADE-208-1017 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Outline
SPAK
1. Emitter
2. Collector
3. Base
1
2
3
2SA1390
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–35
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–35
V
–4
V
–500
300
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–35
–35
–4
—
—
V
IC = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
—
—
—
–0.5
–0.6
µA
VCB = –20 V, IE = 0
IC = –150 mA, IB = –15 mA*2
Collector to emitter saturation VCE(sat)
–0.2
V
voltage
1
DC current transfer ratio
DC current transfer ratio
Base to emitter voltage
hFE1
hFE2
VBE
*
60
10
—
—
320
—
VCE = –3 V, IC = –10 mA
VCE = –3 V, IC = –500 mA*2
VCE = –3 V, IC = –10 mA
—
–0.64
—
V
Notes: 1. The 2SA1390 is grouped by hFE1 as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SA673.
2
2SA1390
Maximum Collector Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
3
2SA1390
Package Dimensions
As of January, 2001
2.2 Max
4.2 Max
Unit: mm
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
SPAK
—
EIAJ
—
Mass (reference value)
0.10 g
4
2SA1390
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5
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