2SA1201Y [ETC]
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SOT-89 ; 晶体管| BJT | PNP | 120V V( BR ) CEO | 800MA I(C ) | SOT- 89\n型号: | 2SA1201Y |
厂家: | ETC |
描述: | TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SOT-89
|
文件: | 总4页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SA1201
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
Unit: mm
·
·
·
·
·
High voltage: V
= −120 V
CEO
High transition frequency: f = 120 MHz (typ.)
T
Small flat package
P
= 1 to 2 W (mounted on ceramic substrate)
C
Complementary to 2SC2881
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
−120
−120
−5
V
V
CBO
CEO
EBO
V
I
−800
−160
500
mA
mA
C
Base current
I
B
PW-MINI
JEDEC
P
P
C
C
―
Collector power dissipation
mW
JEITA
SC-62
2-5K1A
1000
(Note 1)
TOSHIBA
Junction temperature
T
150
°C
°C
j
Weight: 0.05 g (typ.)
Storage temperature range
T
−55 to 150
stg
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
1
2002-08-13
2SA1201
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= −120 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―ꢀ
―ꢀ
―
−0.1
−0.1
―
µA
µA
V
CBO
CB
EB
E
Emitter cut-off current
I
= −5 V, I = 0
―ꢀ
―ꢀ
―
EBO
C
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
V
I
I
= −10 mA, I = 0
−120
−5
(BR) CEO
(BR) EBO
C
E
B
= −1 mA, I = 0
―
V
C
h
FE
DC current gain
V
= −5 V, I = −100 mA
80
―ꢀ
240
CE
C
(Note 2)
CE (sat)
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= −500 mA, I = −50 mA
―
―
―
―
―
―
−1.0
−1.0
―
V
V
C
B
V
V
V
V
= −5 V, I = −500 mA
C
BE
CE
CE
CB
Transition frequency
f
= −5 V, I = −100 mA
120
―
MHz
pF
T
C
Collector output capacitance
C
= −10 V, I = 0, f = 1 MHz
30
ob
E
Note 2: h classification O: 80 to 160, Y: 120 to 240
FE
Marking
Type name
classification
h
FE
D O
2
2002-08-13
2SA1201
I
– V
h
– I
C
CE
FE C
−800
−600
−400
−200
0
1000
−10
−7
Common emitter
= −5 V
Common emitter
Ta = 25°C
500
300
V
CE
−5
Ta = 100°C
25
−4
−3
−25
100
50
30
−2
I
= −1 mA
B
10
−3
−10
−30
−100
−300
−1000
0
Collector current
I
(mA)
0
−4
−8
−12
−16
C
Collector-emitter voltage
V
(V)
CE
V
– I
I – V
C BE
CE (sat)
C
−0.5
−0.3
−0.8
−0.6
−0.4
−0.2
0
Common emitter
/I = 10
Common emitter
= −5 V
I
C B
V
CE
−0.1
Ta = 100°C
−0.05
−0.03
Ta = 100°C
25
−25
25
−25
−0.01
−10
−30
−100
−300
(mA)
−1000
−3
Collector current
I
C
0
−0.2
−0.4
−0.6
−0.8
−1.0
(V)
−1.2
Base-emitter voltage
V
BE
Safe Operating Area
−3000
−1000
I
max (pulse)*
C
1 ms*
10 ms*
I
max (continuous)
C
P
– Ta
C
1.2
1.0
0.8
0.6
0.4
0.2
0
−500
−300
(1) Mounted on ceramic substrate
(250 mm2 × 0.8 t)
(1)
DC
operation
(2) No heat sink
100 ms*
−100
Ta = 25°C
−50
−30
(2)
*: Single nonrepetitive pulse
Ta = 25°C
−10
−5
−3
Curves must be derated linearly
with increase in temperature
Tested without a substrate
V
max
−100
(V)
CEO
−1
−0.3
−1
−3
−10
−30
−300
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
Ambient temperature Ta (°C)
CE
3
2002-08-13
2SA1201
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
4
2002-08-13
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