2SA1201Y [ETC]

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SOT-89 ; 晶体管| BJT | PNP | 120V V( BR ) CEO | 800MA I(C ) | SOT- 89\n
2SA1201Y
型号: 2SA1201Y
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SOT-89
晶体管| BJT | PNP | 120V V( BR ) CEO | 800MA I(C ) | SOT- 89\n

晶体 晶体管
文件: 总4页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA1201  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1201  
Voltage Amplifier Applications  
Power Amplifier Applications  
Unit: mm  
·
·
·
·
·
High voltage: V  
= −120 V  
CEO  
High transition frequency: f = 120 MHz (typ.)  
T
Small flat package  
P
= 1 to 2 W (mounted on ceramic substrate)  
C
Complementary to 2SC2881  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
120  
120  
5  
V
V
CBO  
CEO  
EBO  
V
I
800  
160  
500  
mA  
mA  
C
Base current  
I
B
PW-MINI  
JEDEC  
P
P
C
C
Collector power dissipation  
mW  
JEITA  
SC-62  
2-5K1A  
1000  
(Note 1)  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)  
1
2002-08-13  
2SA1201  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
 
ꢀ  
0.1  
0.1  
µA  
µA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 5 V, I = 0  
ꢀ  
ꢀ  
EBO  
C
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 10 mA, I = 0  
120  
5  
(BR) CEO  
(BR) EBO  
C
E
B
= 1 mA, I = 0  
V
C
h
FE  
DC current gain  
V
= 5 V, I = 100 mA  
80  
ꢀ  
240  
CE  
C
(Note 2)  
CE (sat)  
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 500 mA, I = 50 mA  
1.0  
1.0  
V
V
C
B
V
V
V
V
= 5 V, I = 500 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= 5 V, I = 100 mA  
120  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
30  
ob  
E
Note 2: h classification O: 80 to 160, Y: 120 to 240  
FE  
Marking  
Type name  
classification  
h
FE  
D O  
2
2002-08-13  
2SA1201  
I
– V  
h
– I  
C
CE  
FE C  
800  
600  
400  
200  
0
1000  
10  
7  
Common emitter  
= 5 V  
Common emitter  
Ta = 25°C  
500  
300  
V
CE  
5  
Ta = 100°C  
25  
4  
3  
25  
100  
50  
30  
2  
I
= 1 mA  
B
10  
3  
10  
30  
100  
300  
1000  
0
Collector current  
I
(mA)  
0
4  
8  
12  
16  
C
Collector-emitter voltage  
V
(V)  
CE  
V
– I  
I – V  
C BE  
CE (sat)  
C
0.5  
0.3  
0.8  
0.6  
0.4  
0.2  
0
Common emitter  
/I = 10  
Common emitter  
= 5 V  
I
C B  
V
CE  
0.1  
Ta = 100°C  
0.05  
0.03  
Ta = 100°C  
25  
25  
25  
25  
0.01  
10  
30  
100  
300  
(mA)  
1000  
3  
Collector current  
I
C
0
0.2  
0.4  
0.6  
0.8  
1.0  
(V)  
1.2  
Base-emitter voltage  
V
BE  
Safe Operating Area  
3000  
1000  
I
max (pulse)*  
C
1 ms*  
10 ms*  
I
max (continuous)  
C
P
Ta  
C
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
500  
300  
(1) Mounted on ceramic substrate  
(250 mm2 × 0.8 t)  
(1)  
DC  
operation  
(2) No heat sink  
100 ms*  
100  
Ta = 25°C  
50  
30  
(2)  
*: Single nonrepetitive pulse  
Ta = 25°C  
10  
5  
3  
Curves must be derated linearly  
with increase in temperature  
Tested without a substrate  
V
max  
100  
(V)  
CEO  
1  
0.3  
1  
3  
10  
30  
300  
0
20  
40  
60  
80  
100  
120  
140  
160  
Collector-emitter voltage  
V
Ambient temperature Ta (°C)  
CE  
3
2002-08-13  
2SA1201  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
4
2002-08-13  

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