2SA1031C
更新时间：2024-09-18 02:44:56
品牌：ETC
描述：TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92
概述
数据手册2SA1031C 概述
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92
晶体管| BJT | PNP | 30V V（ BR ） CEO | 100MA I（C ） | TO- 92\n
2SA1031C 数据手册
通过下载2SA1031C数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
•
•
Low frequency low noise amplifier
Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1031, 2SA1032
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SA1031
–30
2SA1032
–55
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–30
–50
V
–5
–5
V
–100
100
–100
100
mA
mA
mW
°C
°C
Emitter current
IE
Collector power dissipation
Junction temperature
Storage temperature
PC
300
300
Tj
150
150
Tstg
–55 to +150
–55 to +150
2
2SA1031, 2SA1032
Electrical Characteristics (Ta = 25°C)
2SA1031
2SA1032
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
–30
–30
–5
—
—
—
—
—
—
–55
–50
–5
—
—
—
—
—
—
V
V
V
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current trnsfer ratio hFE*1
—
—
—
—
–0.5
–0.5
500
—
—
—
—
–0.5 µA
–0.5 µA
320
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
—
—
100
100
VCE = –12 V,
IC = –2 mA
Base to emitter voltage VBE
—
—
—
—
–0.8
–0.2
—
—
—
–0.8
–0.2
—
V
V
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
IC = –10 mA,
IB = –1 mA
Gain bandwidth product fT
200 280
200
—
280
3.3
—
MHz VCE = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
NF
—
—
3.3
—
4.0
5
4.0
5
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
—
dB
VCE = –6 V,
IC = –0.1 mA,
Rg = 500 Ω,
f = 120 Hz
Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.
B
C
D
2SA1031
2SA1032
100 to 200
100 to 200
160 to 320
160 to 320
250 to 500
—
3
2SA1031, 2SA1032
Typical Output Characteristics (1)
Maximum Collector Dissipation Curve
–10
–8
–6
–4
–2
300
200
100
–25
–20
–15
–10
–5 µA
IB = 0
0
–0.2
–0.4
–0.6
–0.8
–1.0
0
50
100
150
Collector Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
Typical Transfer Characteristics
VCE = –5 V
–10
–8
–6
–4
–2
–5
–4
–3
–2
–1
–25
–20
–15
–10
–5 µA
IB = 0
0
–5
–10
–15
–20
–25
0
–0.2
–0.4
–0.6
–0.8
–1.0
Collector Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
4
2SA1031, 2SA1032
DC Current Transfer Ratio vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
700
600
500
400
300
500
400
300
200
100
0
VCE = –5 V
VCE = –10 V
200
–0.01
–0.1
–1.0
–10
–100
–0.5 –1.0
–2
–5
–10
–20
Collector Current IC (mA)
Collector Current IC (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.28
–0.24
–0.20
–0.16
–0.12
–0.08
–0.04
0
IC = 10 IB
–1 –2
–5 –10 –20
–50 –100
Collector Current IC (mA)
5
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.5 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
2SA1031C 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA1031D | ETC | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 | 获取价格 |
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| 2SA1031DRF | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SA1031DRR | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92(1), 3 PIN | 获取价格 |
|
| 2SA1031RF | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | 获取价格 |
|
| 2SA1031RR | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | 获取价格 |
|
| 2SA1031RR | RENESAS | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | 获取价格 |
|
| 2SA1031TZ | RENESAS | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | 获取价格 |
|
| 2SA1032 | HITACHI | Silicon PNP Epitaxial | 获取价格 |
|
| 2SA1032 | RENESAS | Silicon PNP Epitaxial | 获取价格 |
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| 2SA1032-C | RENESAS | SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
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