2SA0879Q
更新时间：2024-09-18 02:44:56
品牌：ETC
描述：TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51
概述
数据手册2SA0879Q 概述
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51
晶体管| BJT | PNP | 200V V（ BR ） CEO | 70MA I（C ） | SC- 51\n
2SA0879Q 数据手册
通过下载2SA0879Q数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Transistor
2SA0879 (2SA879)
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SC1573
5.9±0.2
4.9±0.2
Features
High collector to emitter voltage VCEO
ꢀ
ꢀ
.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
ꢀ
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
–250
–200
–5
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
V
+0.2
–0.1
0.45
+0.2
–0.1
0.45
V
(1.27)
(1.27)
–100
–70
mA
mA
W
IC
1
2
3
1:Emitter
2:Collector
3:Base
Collector power dissipation
Junction temperature
Storage temperature
PC
1
2.54±0.15
Tj
150
˚C
˚C
EIAJ:SC–51
TO-92L-A1 Package
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
ꢀ
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
V
Collector cutoff current
VCB = –12V, IB = 0
–2
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = –100µA, IB = 0
–200
–5
IE = –1µA, IC = 0
V
*
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
60
220
Collector to emitter saturation voltage VCE(sat)
–1.5
V
MHz
pF
Transition frequency
fT
50
80
5
Collector output capacitance
Cob
10
*hFE Rank classification
Rank
hFE
Q
R
60 ~ 150
100 ~ 220
Note.) The Part number in the Parenthesis shows conventional part number.
92
Transistor
2SA0879
PC — Ta
IC — VCE
IC — IB
1.2
1.0
0.8
0.6
0.4
0.2
0
–120
–100
–80
–60
–40
–20
0
–120
–100
–80
–60
–40
–20
0
Ta=25˚C
VCE=–10V
Ta=25˚C
IB=–2mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
0
20 40 60 80 100 120 140
1
)
0
–2
–4 60 –6
–8
–1
0
– 0.4 – 0.8 –1.2
0
–1.6 –2.0 –2.4
(
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB mA
IB — VBE
IC — VBE
VCE(sat) — IC
–2.4
–2.0
–1.6
–1.2
– 0.8
– 0.4
0
–120
–100
IC/IB=10
VCE=–10V
VCE=–10V
Ta=25˚C
–30
–10
25˚C
–100
–80
–60
–40
–20
0
Ta=75˚C
–25˚C
–3
–1
25˚C
– 0.3
– 0.1
Ta=75˚C
–25˚C
– 0.03
– 0.01
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
0
– 0.4 – 0.8
–1.2
–1.6
–2.0
– 0.1 – 0.3
–1
–3
–10 –30 –100
( )
V
( )
V
(
)
Base to emitter voltage VBE
Base to emitter voltage VBE
Collector current IC mA
hFE — IC
fT — IE
Cob — VCB
300
250
200
150
100
50
160
140
120
100
80
16
14
12
10
8
VCE=–10V
VCB=–10V
f=100MHz
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
Ta=75˚C
25˚C
60
6
–25˚C
40
4
20
2
0
0
0.1
0
–1
– 0.1 – 0.3
–1
–3
–10 –30 –100
0.3
1
3
10
30
100
–3
–10
–30
–100
(
)
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
Emitter current IE mA
93
Transistor
2SA0879
IEBO — Ta
ICBO — Ta
Area of safe operation (ASO)
10000
10000
–1000
Single pulse
Ta=25˚C
VEB=–5V
VCB=–250V
3000
1000
3000
1000
–300
–100
ICP
t=10ms
IC
300
100
300
100
–30
–10
t=1s
30
10
30
10
–3
–1
3
1
3
1
– 0.3
– 0.1
0
40
80
120
160
200
)
0
40
80
120
160
200
)
–1
–3
–10 –30 –100 –300 –1000
(
(
( )
Collector to emitter voltage VCE V
Ambient temperature Ta ˚C
Ambient temperature Ta ˚C
94
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
2SA0879Q 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA0879R | ETC | TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-51 | 获取价格 |
|
| 2SA0885 | PANASONIC | Silicon PNP epitaxial planar type | 获取价格 |
|
| 2SA0885(2SA885) | ETC | Power Device - Power Transistors - Others | 获取价格 |
|
| 2SA0885Q | PANASONIC | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | 获取价格 |
|
| 2SA0885R | PANASONIC | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | 获取价格 |
|
| 2SA0885S | PANASONIC | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 | 获取价格 |
|
| 2SA0885|2SA885 | ETC | Power Device - Power Transistors - Others | 获取价格 |
|
| 2SA0886 | PANASONIC | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) | 获取价格 |
|
| 2SA0886(2SA886) | ETC | 2SA0886 (2SA886) - PNP Transistor | 获取价格 |
|
| 2SA0886Q | ETC | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 | 获取价格 |
|
2SA0879Q 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
