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元器件品牌
2N662
[ETC]
alloy-junction germanium transistors; 合金结的锗晶体管
元器件型号：
2N662
生产厂家：
ETC
描述和应用：
alloy-junction germanium transistors
合金结的锗晶体管
晶体 晶体管
PDF文件：
总3页 (文件大小：269K)
下载文档：
下载PDF数据表文档文件
型号参数：2N662参数
查看货源
2N6620
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER
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INFINEON
2N6620
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER
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17
INFINEON
2N6621
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | MACRO-T
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11
ETC
2N663
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 4A I(C) | TO-3
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24
ETC
2N6648
PNP DARLINGTON POWER SILICON TRANSISTOR
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16
MICROSEMI
2N6648
POWER TRANSISTORS(10A,100W)
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39
MOSPEC
2N6648
POWER TRANSISTORS TO-3 CASE
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CENTRAL
2N6648
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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NJSEMI
2N6648E3
Power Bipolar Transistor
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0
MICROSEMI
2N6648LEADFREE
暂无描述
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0
CENTRAL
2N6649
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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18
NJSEMI
2N6649
PNP DARLINGTON TRANSISTOR
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23
NJSEMI
2N6649
POWER TRANSISTORS(10A,100W)
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29
MOSPEC
2N6649
POWER TRANSISTORS TO-3 CASE
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19
CENTRAL
2N6649
PNP DARLINGTON POWER SILICON TRANSISTOR
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MICROSEMI
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