2N6437/D [ETC]
High-Power PNP Silicon Transistors ; 大功率PNP硅晶体管\n
| 型号： | 2N6437/D |
| 厂家： | 
ETC |
| 描述： | High-Power PNP Silicon Transistors
|
| 文件： | 总8页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
2N6437
2N6438
High-Power PNP Silicon
Transistors
*
. . . designed for use in industrial–military power amplifier and
*ON Semiconductor Preferred Device
switching circuit applications.
25 AMPERE
POWER TRANSISTORS
PNP SILICON
• High Collector–Emitter Sustaining Voltage —
V
= 100 Vdc (Min) — 2N6437
CEO(sus)
= 120 Vdc (Min) — 2N6438
100, 120 VOLTS
200 WATTS
• High DC Current Gain —
= 20–80 @I = 10 Adc
h
FE
C
= 12 (Min) @ I = 25 Adc
C
• Low Collector–Emitter Saturation Voltage —
= 1.0 Vdc (Max) @ I = 10 Adc
V
CE(sat)
C
• Fast Switching Times @ I = 10 Adc
C
t = 0.3 µs (Max)
r
t = 1.0 µs (Max)
t = 0.25 µs (Max)
f
s
CASE 1–07
TO–204AA
(TO–3)
• Complement to NPN 2N6339 thru 2N6341
MAXIMUM RATINGS (1)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
2N6437
120
2N6438
140
Unit
Vdc
Vdc
Vdc
Adc
V
CB
V
CEO
100
120
V
EB
6.0
Collector Current — Continuous
Peak
I
C
25
50
Base Current
I
B
10
Adc
Total Device Dissipation @ T = 25_C
P
200
1.14
Watts
C
D
Derate above 25_C
W/_C
Operating and Storage Junction
Temperature Range
T ,T
J
–65 to +200
_C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
R
0.875
_C/W
θ
JC
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
April, 2001 – Rev. 2
2N6437/D
2N6437 2N6438
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
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2N6437 2N6438
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 50 mAdc, I = 0)
2N6437
2N6438
100
120
—
—
C
B
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
µAdc
µAdc
CEO
2N6437
2N6438
CE
B
—
—
50
50
(V = 60 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
CEX
(V = 110 Vdc, V
= –1.5 Vdc)
= –1.5 Vdc)
2N6437
2N6438
2N6437
2N6438
CE
BE(off)
BE(off)
BE(off)
BE(off)
—
—
—
—
10
10
1.0
1.0
(V = 130 Vdc, V
CE
(V = 100 Vdc, V
= –1.5 Vdc, T = 150_C)
CE
C
mAdc
(V = 120 Vdc, V
CE
= –1.5 Vdc, T = 150_C)
C
Collector Cutoff Current
(V = 120 Vdc, I = 0)
I
µAdc
CBO
2N6437
2N6438
CB
E
—
—
10
10
(V = 140 Vdc, I = 0)
CB
E
Emitter Cutoff Current (V = 6.0 Vdc, I = 0)
I
EBO
—
100
µAdc
EB
C
ON CHARACTERISTICS
DC Current Gain (1)
h
FE
—
(I = 0.5 Adc, V = 2.0 Vdc)
C
CE
30
20
12
—
120
—
(I = 10 Adc, V = 2.0 Vdc)
C
CE
(I = 25 Adc, V = 2.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage (1)
(I = 10 Adc, I = 1.0 Adc)
V
V
Vdc
Vdc
CE(sat)
C
B
—
—
1.0
1.8
(I = 25 Adc, I = 2.5 Adc)
C
B
Base–Emitter Saturation Voltage (1)
(I = 10 Adc, I = 1.0 Adc)
BE(sat)
C
B
—
—
1.8
2.5
(I = 25 Adc, I = 2.5 Adc)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (I = 1.0 Adc, V = 10 Vdc, f
= 10 MHz)
f
40
—
—
MHz
pF
C
CE
test
T
Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz)
C
700
CE
E
ob
SWITCHING CHARACTERISTICS
Rise Time (V = 80 Vdc, I = 10 A, V
= 6.0 Vdc, I = 1.0 Adc)
t
—
—
—
0.3
1.0
µs
µs
µs
CC
C
BE(off)
B1
r
Storage (V = 80 Vdc, I = 10 A, V
= 6.0 Vdc, I = I = 1.0 Adc)
t
s
CC
C
BE(off)
B1
B2
Fall Time (V = 80 Vdc, I = 10 A,V
= 6.0 Vdc, I = I = 1.0 Adc)
t
f
0.25
CC
C
BE(off)
B1
B2
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 µs; Duty Cycle v 2.0%.
0.3
0.2
V
CC
V
= 80 V
CC
I /I = 10
t @ V
d
= 6.0 V
+ 80 V
BE(off)
C
B
R
C
8.0 OHMS
T = 25°C
J
1.0
0.7
0.5
+ 9.0 V
0
R
=
SCOPE
B
10 OHMS
0.3
0.2
t
r
- 11 V
MBR74
5
10
µs
0.1
0.07
0.05
t , t v 10 ns
r
f
DUTY CYCLE = 1.0%
- 5.0 V
NOTE: For information on Figures 3 and 6, R and R were
0.03
B
C
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
varied to obtain desired test conditions.
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
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2N6437 2N6438
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
Z
(t) = r(t)R
θ
JC
θ
JC
0.1
0.07
0.05
0.05
0.02
R
= 0.875°C/W MAX
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
t
READ TIME AT t
2
0.03
0.02
1
0.01
T
- T = P
C
Z
(t)
θ
(pk) JC
J(pk)
DUTY CYCLE, D = t /t
1
2
SINGLE
PULSE
0.02 0.03 0.05
0.01
0.01
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100
50
200 µs
breakdown. Safe operating area curves indicate I – V
C
CE
1.0 ms
5.0 ms
20
10
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
dc
5.0
T = 200°C
J
2.0
1.0
0.5
0.2
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 200_C; T is
J(pk)
C
BONDING WIRE LIMITED
THERMALLY LIMITED
T
C
= 25°Cą(SINGLE PULSE)
limits are valid for duty cycles to 10% provided T
J(pk)
PULSE DUTY CYCLE v 10%
v 200_C. T
may be calculated from the data in
J(pk)
0.1
SECOND BREAKDOWN LIMĆ
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
CURVES APPLY
2N6437
2N6438
0.02
0.01
BELOW RATED V
CEO
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
V
CE
, COLLECTORĆEMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0
4000
3000
2.0
V
I
= 80 V
CC
= I
B1 B2
t
s
T = 25°C
J
C
ib
I /I = 10
B
1.0
0.7
0.5
2000
C
T = 25°C
J
t
f
C
ob
1000
700
0.3
0.2
500
0.1
0.07
0.05
300
200
0.03
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.1 0.2
0.5
1.0 2.0
5.0
10 20 50
100
I , COLLECTOR CURRENT (AMP)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn-Off Time
Figure 7. Capacitance
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2N6437 2N6438
2.0
1.8
1.6
1.4
1.2
1.0
0.8
200
T = 25°C
J
T = 150°C
J
I
C
= 2.0 A
5.0 A
10 A
20 A
100
70
+ 25°C
50
-ā55°C
30
20
0.6
0.4
V
V
= 2.0 V
= 4.0 V
CE
0.2
0
CE
10
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (AMP)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.8
1.6
+ā2.5
T = 25°C
J
h
@ĂV
+Ă 2.0ĂV
FEĂ
CEĂ
2
+ā2.0
+ā1.5
+ā1.0
+ā0.5
*APPLIES FOR I /I v
C
B
1.4
1.2
1.0
+25°C to +150°C
*θ FOR V
VC
CE(sat)
0
V
@ I /I = 10
C B
-ā55°C to +25°C
BE(sat)
-ā0.5
0.8
0.6
0.4
0.2
0
+25°C to +150°C
-ā1.0
-ā1.5
θ
FOR V
BE
V
@ V = 2.0 V
CE
VB
BE
V
@ I /I = 10
C B
-ā2.0
-ā55°C to + 25°C
CE(sat)
-ā2.5
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
1
0
2
1
10
10
T = +150°C
J
V
CE
= 40 V
T = +150°C
J
10
10
+100°C
+100°C
-1
10
0
10
-1
-2
-3
-2
10
10
10
10
10
V
= 40 V
CE
+25°C
+25°C
-3
REVERSE
FORWARD
-ā0.3
REVERSE
+ā0.08
FORWARD
-4
10
+ā0.2
+ā0.1
V
0
-ā0.1
-ā0.2
-ā0.4
-ā0.5
+ā0.16
0
-ā0.08
-ā0.16
-ā0.24
, BASEĆEMITTER VOLTAGE (VOLTS)
V
BE
, BASEĆEMITTER VOLTAGE (VOLTS)
BE
Figure 13. Base Cutoff Region
Figure 12. Collector Cut-Off Region
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2N6437 2N6438
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
K
D 2 PL
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
M
M
M
Y
0.13 (0.005)
T
Q
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
U
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
---
0.151
0.830
0.165
---
3.84
21.08
4.19
–Q–
0.13 (0.005)
M
M
Y
T
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N6437 2N6438
Notes
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2N6437 2N6438
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2N6437/D
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