2N5932 [ETC]

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-3VAR ; 晶体管| BJT | NPN | 60V V( BR ) CEO | 30A I(C ) | TO- 3VAR\n
2N5932
型号: 2N5932
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-3VAR
晶体管| BJT | NPN | 60V V( BR ) CEO | 30A I(C ) | TO- 3VAR\n

晶体 晶体管
文件: 总1页 (文件大小:82K)
下载:  下载PDF数据表文档文件

2N5933

Bipolar NPN Device

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16 SEME-LAB

2N5933

Bipolar NPN Device

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18 SEME-LAB

2N5934

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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25 SEME-LAB

2N5934

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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15 SEME-LAB

2N5935

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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366 SEME-LAB

2N5935E3

Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N5935E3

Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N5936

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 30A I(C) | TO-3VAR

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17 ETC

2N5936

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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20 SEME-LAB

2N5936

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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31 SEME-LAB

2N5936E3

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N5936E3

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N5937

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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30 SEME-LAB

2N5937

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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16 SEME-LAB

2N5938

3A, 50V, NPN, Si, POWER TRANSISTOR

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0 TI