2N3712 [ETC]

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 200MA I(C) | TO-5 ; 晶体管| BJT | NPN | 150V V( BR ) CEO | 200MA I(C ) | TO- 5\n
2N3712
型号: 2N3712
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 200MA I(C) | TO-5
晶体管| BJT | NPN | 150V V( BR ) CEO | 200MA I(C ) | TO- 5\n

晶体 晶体管
文件: 总1页 (文件大小:177K)
下载:  下载PDF数据表文档文件

2N3713

POWER TRANSISTORS(10A,150W)

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31 MOSPEC

2N3713

SILICON NPN POWER TRANSISTORS

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13 BOCA

2N3713

Power Transistors

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7 ETC

2N3713

Bipolar NPN Device in a Hermetically sealed TO3

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29 SEME-LAB

2N3713

EPITAXIAL-BASE NPN - PNP

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13 COMSET

2N3713

NPN SILICON POWER TRANSISTORS

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5 NJSEMI

2N3713

Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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0 ASI

2N3713_12

EPITAXIAL-BASE TRANSISTORS

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10 COMSET

2N3713SMD

Bipolar NPN Device in a Hermetically sealed

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5 SEME-LAB

2N3714

EPITAXIAL-BASE NPN - PNP

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11 COMSET

2N3714

Power Transistors

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26 ETC

2N3714

SILICON NPN POWER TRANSISTORS

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17 BOCA

2N3714

Bipolar NPN Device in a Hermetically sealed TO3

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6 SEME-LAB

2N3714LEADFREE

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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0 CENTRAL

2N3714SMD

Bipolar NPN Device in a Hermetically sealed

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6 SEME-LAB