2N2820 [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | STR-5/16 ; 晶体管| BJT | NPN | 100V V( BR ) CEO | 25A I(C ) | STR - 5月16日![2N2820](http://pdffile.icpdf.com/pdf1/p00004/img/icpdf/2N281_15563_icpdf.jpg)
型号: | 2N2820 |
厂家: | ![]() |
描述: | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | STR-5/16
|
文件: | 总2页 (文件大小:19K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N2894
PNP SILICON
TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
FEATURES
4.95 (0.195)
4.52 (0.178)
• SILICON PNP TRANSISTOR
• HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
0.48 (0.019)
0.41 (0.016)
dia.
GENERAL PURPOSE SWITCHING
APPLICATIONS
2.54 (0.100)
Nom.
3
1
2
TO18
Underside View
PIN1 – EMITER
PIN 2 – BASE
PIN 3 – COLLECTOR
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
12V
12V
CBO
CEO
EBO
4V
I
200mA
C
P
Total Device Dissipation @ T =25°C
360mW
2.06mW / °C
12W
D
A
Derate above 25°C
Total Device Dissipation @ T =25°C
P
D
C
Derate above 25°C
Operating and Storage Temperature Range
6.85mW / °C
–65 to +200°C
T
, T
J
STG
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 4/99
2N2894
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Collector – Base BreakdownVoltage
Test Conditions
Min.
12
Typ.
Max. Unit
BV
BV
BV
BV
I
I = 10mA
I = 0
CEO(SUS)
C
B
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
I = 10 A
V
= 0
12
CES
C
BE
I = 10 A
I = 0
12
V
CBO
C
E
I = 100 A
I = 0
4
EBO
E
C
V
V
V
= 6V
= 6V
= 6V
T
= 125°C
10
80
A
CBO
CES
B
CB
CE
CE
amb
I
I
Collector Cut-off Current
V
V
= 0
BE
BE
nA
Base Current
= 0
80
I
= 10mA
I = 1mA
0.15
0.2
0.5
0.98
1.2.
1.7
C
B
V
V
Collector – Emitter Saturation Voltage
Base – Emitter On Voltage
I = 30mA
I = 3mA
V
V
CE(sat)
BE(sat)
C
B
I = 100mA
I = 10mA
B
C
I = 10mA
I = 1mA
0.78
0.85
C
B
I = 30mA
I = 3mA
C
B
I = 100mA
I = 10mA
B
C
I = 10mA
V
V
V
T
= 0.3V
= 0.5V
= 0.5V
= -55°C
30
40
C
CE
CE
CE
I = 30mA
150
C
h
DC Current Gain
I = 30mA
—
FE
C
17
25
amb
I = –30mA
V
= –0.5V
C
CE
V
= 10V
f = 100MHz
CE
f
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
400
T
I = 30mA
MHz
pF
C
V
= 5V
I = 0
E
CB
C
C
t
6
6
ob
f = 140KHz
= 0.5V
V
I = 0
C
BE
ib
f = 140KHz
Turn on Time
60
90
on
V
= 2V
I = 30mA
C
CC
ns
I
= – I =1.5mA
B2
B1
t
off
Turn off Time
* Pulse Test: t
300 s,
1%.
p
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 4/99
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