2N2820 [ETC]

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | STR-5/16 ; 晶体管| BJT | NPN | 100V V( BR ) CEO | 25A I(C ) | STR - 5月16日
2N2820
型号: 2N2820
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | STR-5/16
晶体管| BJT | NPN | 100V V( BR ) CEO | 25A I(C ) | STR - 5月16日

晶体 晶体管
文件: 总2页 (文件大小:19K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N2894  
PNP SILICON  
TRANSISTOR  
MECHANICAL DATA  
Dimensions in mm (inches)  
5.84 (0.230)  
5.31 (0.209)  
FEATURES  
4.95 (0.195)  
4.52 (0.178)  
• SILICON PNP TRANSISTOR  
• HIGH SPEED, LOW SATURATION SWITCH  
APPLICATIONS:  
0.48 (0.019)  
0.41 (0.016)  
dia.  
GENERAL PURPOSE SWITCHING  
APPLICATIONS  
2.54 (0.100)  
Nom.  
3
1
2
TO18  
Underside View  
PIN1 – EMITER  
PIN 2 – BASE  
PIN 3 – COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
A
V
V
V
Collector – Base Voltage  
Collector – Emitter Voltage  
Emitter – Base Voltage  
Collector Current  
12V  
12V  
CBO  
CEO  
EBO  
4V  
I
200mA  
C
P
Total Device Dissipation @ T =25°C  
360mW  
2.06mW / °C  
12W  
D
A
Derate above 25°C  
Total Device Dissipation @ T =25°C  
P
D
C
Derate above 25°C  
Operating and Storage Temperature Range  
6.85mW / °C  
–65 to +200°C  
T
, T  
J
STG  
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 4/99  
2N2894  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)  
A
Parameter  
Collector – Base BreakdownVoltage  
Test Conditions  
Min.  
12  
Typ.  
Max. Unit  
BV  
BV  
BV  
BV  
I
I = 10mA  
I = 0  
CEO(SUS)  
C
B
Collector – Emitter Breakdown Voltage  
Collector – Base Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut-off Current  
I = 10 A  
V
= 0  
12  
CES  
C
BE  
I = 10 A  
I = 0  
12  
V
CBO  
C
E
I = 100 A  
I = 0  
4
EBO  
E
C
V
V
V
= 6V  
= 6V  
= 6V  
T
= 125°C  
10  
80  
A
CBO  
CES  
B
CB  
CE  
CE  
amb  
I
I
Collector Cut-off Current  
V
V
= 0  
BE  
BE  
nA  
Base Current  
= 0  
80  
I
= 10mA  
I = 1mA  
0.15  
0.2  
0.5  
0.98  
1.2.  
1.7  
C
B
V
V
Collector – Emitter Saturation Voltage  
Base – Emitter On Voltage  
I = 30mA  
I = 3mA  
V
V
CE(sat)  
BE(sat)  
C
B
I = 100mA  
I = 10mA  
B
C
I = 10mA  
I = 1mA  
0.78  
0.85  
C
B
I = 30mA  
I = 3mA  
C
B
I = 100mA  
I = 10mA  
B
C
I = 10mA  
V
V
V
T
= 0.3V  
= 0.5V  
= 0.5V  
= -55°C  
30  
40  
C
CE  
CE  
CE  
I = 30mA  
150  
C
h
DC Current Gain  
I = 30mA  
FE  
C
17  
25  
amb  
I = –30mA  
V
= –0.5V  
C
CE  
V
= 10V  
f = 100MHz  
CE  
f
Current Gain Bandwidth Product  
Output Capacitance  
Input Capacitance  
400  
T
I = 30mA  
MHz  
pF  
C
V
= 5V  
I = 0  
E
CB  
C
C
t
6
6
ob  
f = 140KHz  
= 0.5V  
V
I = 0  
C
BE  
ib  
f = 140KHz  
Turn on Time  
60  
90  
on  
V
= 2V  
I = 30mA  
C
CC  
ns  
I
= – I =1.5mA  
B2  
B1  
t
off  
Turn off Time  
* Pulse Test: t  
300 s,  
1%.  
p
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 4/99  

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