2C3637KV [ETC]
BJT ; BJT\n
ETC 
Data Sheet No. CP3637
2N3636, 2N3636L
2N3637, 2N3637L
Chip Type 2C3637KV
Geometry 0820
Polarity PNP
REF: MIL-PRF-19500L/357
B
E
27 MILS
Chip type 2C3637KV by Semicoa
Semiconductors meets the standards
for MIL-PRF-19500L Appendix G,
Class K and provides performance
similar to these devices.
Product Summary
Part Number
2N3636, 2N3636L, 2N3637, 2N3637L
Features:
APPLICATIONS: Designed for gen-
eral purpose switching and amplifier
applications.
·
·
·
·
High voltage ratings
Low saturation voltages
Low capacitance
RADIATION: Consult factory for
availability of Radiation Data for this
device.
Medium current capabilities
Mechanical Specifications
Top
Backside
E m itter
Base
Al - 20 kÅ
M etallization
Au - 6.5 KÅ nom.
4.0 m ils x 5.0 mils
4.5 m ils x 4.5 mils
Bonding Pad Size
8 mils nominal
D ie Thickness
Chip Area
27 mils x 27 m ils
Silox Passivated
Top Surface
Electrical Characteristics
TA = 25oC (Group A2, A3)
Parameter
Test conditions
Min
---
Max
10
Unit
µA dc
µA dc
V dc
nA dc
nA dc
µA dc
---
ICBO1
IEBO1
V
Bias condition D; VCB = 175 V dc
VEB = 5 V dc
---
10
Bias condition D; IC = 10 mA dc; pulsed
Bias condition D; VCB = 100 V dc
Bias condition D; VEB = 3 V dc
175
---
---
(BR)CEO
ICBO2
IEBO2
ICEO
hFE1
hFE2
hFE3
hFE4
hFE5
100
50
---
Bias condition D; VCE = 100 V dc
VCE = 10 V dc; IC = 0.1 mA dc; pulsed
VCE = 10 V dc; IC = 1.0 mA dc; pulsed
VCE = 10 V dc; IC = 10 mA dc; pulsed
VCE = 10 V dc; IC = 50 mA dc; pulsed
VCE = 10 V dc; IC = 150 mA dc; pulsed
IC = 10 mA dc; IB = 1 mA dc; pulsed
IC = 50 mA dc; IB = 5 mA dc; pulsed
---
10
55
---
90
---
---
100
100
60
---
---
300
---
---
---
VCE(sat)1
VCE(sat)2
VBE(sat)1
---
0.3
0.6
V dc
V dc
---
Test condition A; IC = 10 mA dc; IB = 1.0 mA
dc; pulsed
---
0.8
V dc
V dc
Test condition A; IC = 50 mA dc; IB = 5 mA dc;
pulsed
VBE(sat)2
ICBO3
hFE6
0.65
0.90
Bias condition D; VCB = -100 V dc
VCE = 10 V dc; IC = 50 mA dc
---
100
---
µA dc
---
50
Due to the limitations of probe testing, only dc parameters are tested. This must be done with
pulse width less than 300 µs, duty cycle less than 2%.
FLOWCHART
MIL-PRF-19500L
APPENDIX G
TABLE XII. Die element evaluation requirements
MIL-STD-750
Quantity
Reference
Paragraph
Sub-
group
1
Class K
Test
Method
Condition
(accept no.)
x
x
x
Electrical Test
100 percent
100 percent
10(0)
G.5.2.1
G.5.2.2
2
Visual Inspection
2072
2072
3a
Internal / Die Inspec-
tion
G.5.2.3.1
3b
4
x
x
Sample Assembly
10 pieces min. G.5.2.3.2
Stabilization
1032
C
10(0)
G.5.2.4.1
t = 24 hours min
x
x
Temperature cycling
Mechanical Shock
1051
2016
C
Y1 direction
Y1 direction
or
Constant Accelera-
tion
2006
x
Electrical Test
Group A,
Subgroups 2,3
Screen 10
Group A,
(Read/Record)
HTRB
x
x
1/
2/
Electrical Test
(Read/Record)
Burn-in
Subgroup 2
Screen 12
x
x
1/
2/
Electrical Test
(Read/Record)
Steady state life
Transistors
Group A,
Subgroup 2
x
x
x
3/
2/
1039
B
Electrical Test
Group A,
Subgroups 2, 3
Condition A
(Read/Record)
Wire Bond Evalua-
tion
5a
5b
6
2037
2017
2077
10(0) wires
G.5.2.5.1
or 20(1) wires
5(0)
x
x
Die Shear Evalua-
tion
G.5.2.5.2
or 10(1)
see test
method
2077
SEM
G.5.2.6
4/
1/ HTRB and burn-in shall be performed when specified on the applicable performance specification sheet.
2/ Thermal Impedance shall not apply.
3/ Time and temperature requirements in accordance with table XI.
4/ May be performed at any time.
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