2223-9A [ETC]
BJT ; BJT\n
ETC 
2223-9A
9 Watts - 24 Volts, Class C
Microwave 2200 - 2300
MHz
CASE OUTLINE
55AW, STYLE 1
GENERAL DESCRIPTION
The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of
Class C, RF output power over the band 2200 - 2300 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
input and output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
29 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
45 Volts
3.5 Volts
1.5 Amps
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX UNITS
CONDITIONS
Power Output
Power Input
Power Gain
F =2.2 - 2.3 GHz
Vcc = 24 Volts
9
Watts
Watts
dB
Pout
Pin
Pg
1.5
8.0
Efficiency
Load Mismatch Tolerance
40
%
ηc
VSWR
10:1
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance*
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Vce = 5 V, Ic= 160mA
Vcb = 28V, 1MHz
Tc = 25 oC
40
3.5
10
Volts
Volts
BVces
BVebo
Hfe
100
6.0
Cob
pF
oC/W
θjc
* Not measureable due to internal prematch network
August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2223-9A
August 1996
相关型号：
222309356121
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 120 uF, THROUGH HOLE MOUNT, ROHS COMPLIANT
VISHAY
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