1SMB10CAT3/D [ETC]
Zener Transient Voltage Suppressors ; 齐纳瞬态电压抑制器\n型号: | 1SMB10CAT3/D |
厂家: | ETC |
描述: | Zener Transient Voltage Suppressors
|
文件: | 总8页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1SMB10CAT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10–78 VOLTS
600 WATT PEAK POWER
Specification Features:
• Working Peak Reverse Voltage Range – 10 V to 78 V
• Standard Zener Breakdown Voltage Range – 11.7 V to 91.3 V
• Peak Power – 600 Watts @ 1 ms
• ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
SMB
Mechanical Characteristics:
CASE 403A
PLASTIC
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
YWW
xxC
LEADS: Modified L–Bend providing more contact area to bond pads
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any
Y
= Year
WW
xxC
= Work Week
= Specific Device Code
= (See Table Next Page)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
P
PK
600
W
@ T = 25°C, Pulse Width = 1 ms
L
ORDERING INFORMATION
DC Power Dissipation @ T = 75°C
P
D
3.0
W
L
Measured Zero Lead Length (Note 2.)
Derate Above 75°C
Thermal Resistance from Junction to Lead
{
Device
Package
Shipping
2500/Tape & Reel
40
25
mW/°C
°C/W
R
q
JL
1SMBxxCAT3
SMB
DC Power Dissipation (Note 3.) @ T = 25°C
P
D
0.55
W
A
Derate Above 25°C
Thermal Resistance from Junction
to Ambient
4.4
226
mW/°C
°C/W
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
R
q
JA
Operating and Storage
Temperature Range
T , T
J
–65 to
+150
°C
stg
†The “T3” suffix refers to a 13 inch reel.
1. 10 X 1000 ms, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2001 – Rev. 4
1SMB10CAT3/D
1SMB10CAT3 Series
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V V
R
BR RWM
V
Clamping Voltage @ I
V
C
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
PP
I
T
Test Current
Bi–Directional TVS
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage
V
C
@ I (Note 6.)
PP
V
RWM
V
BR
(Note 5.) Volts
@ I
V
C
I
PP
(Note 4.)
I
R
@ V
RWM
T
Device
Min
Nom
Max
mA
Volts
µA
Volts
Amps
Marking
Device
1SMB10CAT3
1SMB11CAT3
1SMB12CAT3
1SMB13CAT3
KXC
KZC
LEC
LGC
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.69
12.84
14.00
15.16
12.27
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1SMB14CAT3
1SMB15CAT3
1SMB16CAT3
1SMB17CAT3
LKC
LMC
LPC
LRC
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.42
17.58
18.74
19.90
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1SMB18CAT3
1SMB20CAT3
1SMB22CAT3
1SMB24CAT3
LTC
LVC
LXC
LZC
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.06
23.37
25.69
28.11
22.1
24.5
27.0
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
1SMB26CAT3
1SMB28CAT3
1SMB30CAT3
1SMB33CAT3
MEC
MGC
MKC
MMC
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.42
32.74
35.06
38.63
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
1SMB36CAT3
1SMB40CAT3
1SMB43CAT3
1SMB45CAT3
MPC
MRC
MTC
MVC
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.11
46.74
50.32
52.63
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.2
10.3
9.3
8.6
8.3
1SMB48CAT3
1SMB51CAT3
1SMB54CAT3
1SMB58CAT3
MXC
MZC
NEC
NGC
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.11
59.69
63.16
67.79
58.9
62.7
66.32
71.18
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
1SMB60CAT3
1SMB64CAT3
1SMB70CAT3
1SMB75CAT3
NKC
NMC
NPC
NRC
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.21
74.84
81.90
91.65
73.72
78.58
85.99
92.07
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
1SMB78CAT3
NTC
78
5.0
86.7
91.26
95.83
1.0
126
4.7
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
), which should be equal to or greater than
RWM
5. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 Watt at the beginning of this group.
http://onsemi.com
2
1SMB10CAT3 Series
100
10
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE PEAK
NONREPETITIVE
t ≤ 10 µs
rĂ
PULSE WAVEFORM
SHOWN IN FIGURE 2
CURRENT DECAYS TO 50% OF I
.
PP
100
50
0
PEAK VALUE - I
PP
I
PP
2
HALF VALUE -
1
t
P
0.1
0.1 µs
1 µs
10 µs
100 µs
1 ms
10 ms
0
1
2
3
4
t , PULSE WIDTH
P
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
TYPICAL PROTECTION CIRCUIT
140
120
Z
in
100
80
LOAD
V
in
V
L
60
40
20
0
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Pulse Derating Curve
http://onsemi.com
3
1SMB10CAT3 Series
APPLICATION NOTES
RESPONSE TIME
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 µs pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
http://onsemi.com
4
1SMB10CAT3 Series
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 4.
Figure 5.
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 µs
10 µs
10 20
D, DUTY CYCLE (%)
0.01
0.1 0.2
0.5
1
2
5
50 100
Figure 6. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
http://onsemi.com
5
1SMB10CAT3 Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors – Surface Mounted
600 Watt Peak Power
SMB
DO–214AA
CASE 403A–03
ISSUE D
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
C
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
H
J
K
P
0.089
2.261
0.108
2.743
inches
mm
0.085
2.159
SMB Footprint
http://onsemi.com
6
1SMB10CAT3 Series
Notes
http://onsemi.com
7
1SMB10CAT3 Series
Surmetic is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, UK, Ireland
1SMB10CAT3/D
相关型号:
1SMB10CATR13
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon,
CENTRAL
1SMB10CATR13TIN/LEAD
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PIN
CENTRAL
1SMB10CATRLEADFREE
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PIN
CENTRAL
1SMB110A
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS
CENTRAL
1SMB110ABKLEADFREE
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon,
CENTRAL
©2020 ICPDF网 联系我们和版权申明