ET830 [ESTEK]
5 Amps，500Volts; 5安培， 500Volts
| 型号： | ET830 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | 5 Amps，500Volts |
| 文件： | 总5页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ET830
5 Amps，500Volts
N-Channel MOSFET
■ Description
The ET830 NꢀChannel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
■ Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
RDS(ON) = 1.5ꢁ@VGS = 10 V
Low gate charge ( typical 20nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Ratings
Parameter
Symbol
Units
TOꢀ220
TOꢀ220F
DrainꢀSource Voltage
GateꢀSource Voltage
VDSS
VGSS
500
±30
V
V
Tc=25℃
5.0
3.0
20
5.0＊
3.0＊
20＊
A
Drain Currenet Continuous
ID
Tc=100℃
A
Drain Current Pulsed
Avalanche Energy
(Note 1)
(Note 1)
IDP
EAR
EAS
A
Repetitive
7.6
305
4.5
mJ
mJ
V/ns
W
Single Pulse (Note 2)
(Note 3)
Peak Diode Recovery dv/dt
Total Power Dissipation
dv/dt
Tc=25℃
76
40
PD
Derate above 25℃
0.6
0.32
W/℃
℃
Junction Temperature
TJ
+150
ꢀ55~+150
Storage Temperature
TSTG
℃
＊Drain current limited by maximum junction temperature.
BEIJING ESTEK ELECTRONICS CO.,LTD
1
ET830
■
Thermal Characteristics
Ratings
TOꢀ220 TOꢀ220F
Parameter
Symbol
Units
Thermal Resistance JunctionꢀAmbient
Thermal Resistance, CaseꢀtoꢀSink Typ.
Thermal Resistance JunctionꢀCase
RthJA
RthCS
RthJC
62.5
℃/W
0.5
1.2
ꢀꢀ
3.65
■
Electrical Characteristics（TJ=25℃,unless Otherwise specified.）
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
DrainꢀSource Breakdown Voltage
BVDSS
IDSS
VGS=0V,ID=250ꢂA
VDS=500V,VGS=0V
VDS=400V,TC=125℃
VGS=30V,VDS=0V
VGS=ꢀ30V,VDS=0V
ID=250ꢂA
500
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
1
V
ꢂA
Zero Gate Voltage Drain Current
ꢀꢀ
ꢀꢀ
10
100
ꢀ100
ꢀꢀ
ꢂA
GateꢀBody Leakage
Current
Forward
Reverse
ꢀꢀ
ꢀꢀ
nA
IGSS
ꢀꢀ
ꢀꢀ
nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ꢀꢀ
0.6
V/℃
On Characteristics
Gate Threshold Voltage
Static DrainꢀSource OnꢀResistance
Dynamic Characteristics
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250ꢂA
VDS=10V,ID=2.5A
2.0
ꢀꢀ
ꢀꢀ
4.0
1.5
V
1.10
ꢁ
CISS
COSS
CRSS
ꢀꢀ
ꢀꢀ
ꢀꢀ
520
80
ꢀꢀ
ꢀꢀ
ꢀꢀ
pF
pF
pF
VDS=25V,VGS=0V,
f=1MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
TurnꢀOn Delay Time
15
tD(ON)
tR
tD(OFF)
tF
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
10
50
50
50
20
2.5
10
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ns
ns
VDD=250V,ID=5.0A,
RG=25ꢁ
Rise Time
TurnꢀOff Delay Time
(Note 4, 5)
ns
Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS=400V, ID=5.0A,
VGS=10V
GateꢀSource Charge
QGS
QGD
(Note 4, 5)
GateꢀDrain Charge
Drain-Source Diode Characteristics
DrainꢀSource Diode Forward Voltage
Continuous DrainꢀSource Current
Pulsed DrainꢀSource Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
ISD
VGS=0V,ISD=5.0A
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
1.4
5.0
20.0
ꢀꢀ
V
A
ISM
ꢀꢀ
A
ISD=5.0A,
dISD/dt=100A/ꢂs
tRR
260
2.0
ns
ꢂC
QRR
(Note 4)
ꢀꢀ
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22 mH, IAS = 5.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
BEIJING ESTEK ELECTRONICS CO.,LTD
2
ET830
■ Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
BEIJING ESTEK ELECTRONICS CO.,LTD
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ET830
■ Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
Figure 10. Maximum Drain Current
vs Case Temperature
BEIJING ESTEK ELECTRONICS CO.,LTD
4
ET830
■ Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
5
BEIJING ESTEK ELECTRONICS CO.,LTD
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