F59L2G81LA [ESMT]
2 Gbit (256M x 8) 3.3V NAND Flash Memory;
| 型号： | F59L2G81LA |
| 厂家： | 
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. |
| 描述： | 2 Gbit (256M x 8) 3.3V NAND Flash Memory |
| 文件： | 总55页 (文件大小：1742K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESMT
F59L2G81LA
2 Gbit (256M x 8)
3.3V NAND Flash Memory
Flash
FEATURES
ꢀ
ꢀ
Voltage Supply: 3.3V (2.7V ~ 3.6V)
Organization
- Memory Cell Array: (256M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
ꢀ
Reliable CMOS Floating Gate Technology
- ECC Requirement: 1bit/528Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
ꢀ
ꢀ
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
ꢀ
ꢀ
Automatic Program and Erase
- Page Program: (2K + 64) byte
- Block Erase: (128K + 4K) byte
- Automatic Memory Download
Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
- Program time: 400us (Typ.)
- Block Erase time: 3ms (Typ.)
Command/Address/Data Multiplexed I/O Port
ꢀ
ꢀ
ꢀ
ꢀ
NOP: 4 cycles
Cache Program Operation for High Performance Program
Cache Read Operation
Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
Bad-Block-Protect
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
ORDERING INFORMATION
Product ID
Speed
25 ns
25 ns
Package
48 pin TSOPI
63 ball BGA
Comments
Pb-free
F59L2G81LA-25TG
F59L2G81LA-25BG
Pb-free
GENERAL DESCRIPTION
The device is a 256Mx8bit with spare 16Mx8bit capacity. The
device is offered in 3.3V VCC Power Supply. Its NAND cell
provides the most cost-effective solution for the solid state mass
storage market. The memory is divided into blocks that can be
erased independently so it is possible to preserve valid data
while old data is erased.
inputs as well as data input/output. The copy back function
allows the optimization of defective blocks management: when a
page program operation fails the data can be directly
programmed in another page inside the same array section
without the time consuming serial data insertion phase. The
cache program feature allows the data insertion in the cache
register while the data register is copied into the Flash array.
This pipelined program operation improves the program
throughput when long files are written inside the memory. A
cache read feature is also implemented. This feature allows to
dramatically improving the read throughput when consecutive
pages have to be streamed out. This device includes extra
feature: Automatic Read at Power Up.
The device contains 2048 blocks, composed by 64 pages
consisting in two NAND structures of 32 series connected Flash
cells. A program operation allows to write the 2112-Word page in
typical 400us and an erase operation can be performed in typical
3ms on a 128K-Byte for X8 device block.
Data in the page mode can be read out at 25ns cycle time per
Word. The I/O pins serve as the ports for address and command
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0
1/55
ESMT
F59L2G81LA
PIN CONFIGURATION (TOP VIEW)
(TSOPI 48L, 12mm X 20mm Body, 0.5mm Pin Pitch)
NC
NC
NC
NC
NC
NC
R/B
RE
CE
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
NC
NC
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
NC
VCC
VCC
VSS
VSS
NC
NC
NC
NC
NC
I/O3
I/O2
I/O1
I/O0
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
NC
NC
NC
BALL CONFIGURATION (TOP VIEW)
(BGA 63 BALL, 9mm X 11mm Body, 0.8 Ball Pitch)
1
2
3
4
5
6
7
8
9
10
NC
NC
A
B
C
D
E
F
NC
NC
NC
NC
NC
WP
NC
ALE
V
SS
CE
NC
NC
WE
NC
NC
R / B
NC
CLE
RE
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
G
H
J
NC
NC
I/O0
VCC
NC
NC
NC
I/O5
I/O7
I/O1
I/O2
V
CC
NC
I/O6
VSS
V
SS
I/O3
I/O4
K
L
NC
NC
NC
NC
NC
NC
NC
NC
M
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 2/55
ESMT
F59L2G81LA
Pin Description
Symbol
Pin Name
Functions
The I/O pins are used to input command, address and data, and to output data
during read operations. The I/O pins float to Hi-Z when the chip is deselected
or when the outputs are disabled.
I/O0~I/O7 Data Inputs / Outputs
The CLE input controls the activating path for commands sent to the internal
command register. Commands are latched into the command register through
Command Latch
Enable
CLE
the I/O ports on the rising edge of the WE signal with CLE high.
The ALE input controls the activating path for addresses sent to the internal
address registers. Addresses are latched into the address register through the
ALE
CE
Address Latch Enable
Chip Enable
I/O ports on the rising edge of WE with ALE high.
The CE input is the device selection control. When the device is in the Busy
state, CE high is ignored, and the device does not return to standby mode in
program or erase operation. Regarding CE control during read operation,
refer to ’Page read’ section of Device operation.
The RE input is the serial data-out control, and when it is active low, it drives
Read Enable
Write Enable
Write Protect
RE
WE
WP
the data onto the I/O bus. Data is valid tREA after the falling edge of RE which
also increments the internal column address counter by one.
The WE input controls writes to the I/O port. Commands, address and data
are latched on the rising edge of the WE pulse.
The WP pin provides inadvertent program/erase protection during power
transitions. The internal high voltage generator is reset when the WP pin is
active low.
The R/B output indicates the status of the device operation. When low, it
indicates that a program, erase or random read operation is in process and
returns to high state upon completion. It is an open drain output and does not
float to Hi-Z condition when the chip is deselected or when outputs are
disabled.
Ready / Busy Output
R /B
VCC
VSS
NC
Power
VCC is the power supply for device.
Ground
No Connection
Lead is not internally connected.
Note: Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 3/55
ESMT
F59L2G81LA
BLOCK DIAGRAM
ARRAY ORGANIZATION
Array Address
I/O0
A0
I/O1
A1
I/O2
A2
I/O3
A3
I/O4
A4
I/O5
A5
I/O6
A6
I/O7
A7
Address
1st cycle
2nd cycle
3rd cycle
4th cycle
5th cycle
NOTE:
Column Address
Column Address
Row Address
A8
A9
A10
A14
A22
L*
A11
A15
A23
L*
L*
L*
L*
L*
A12
A20
A28
A13
A21
L*
A16
A24
L*
A17
A25
L*
A18
A26
L*
A19
A27
L*
Row Address
Row Address
Column Address: Starting Address of the Register.
* L must be set to “Low”.
* The device ignores any additional input of address cycles than required.
A18 is for Plane Address setting.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0
4/55
ESMT
F59L2G81LA
Product Introduction
The device is a 2,112Mbit memory organized as 128K rows (pages) by 2,112x8 columns. Spare 64x8 columns are located from
column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between
the I/O buffers and memory during page read and page program operations. The program and read operations are executed on a page
basis, while the erase operation is executed on a block basis. The memory array consists of 2048 separately erasable 128K-byte
blocks. It indicates that the bit-by-bit erase operation is prohibited on the device.
The device has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future
densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing
WE to low while CE is low. Those are latched on the rising edge of WE . Command Latch Enable (CLE) and Address Latch
Enable (ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block
erase and page program, require two cycles: one cycle for setup and the other cycle for execution.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory.
Command Set
Acceptable Command
Function
1st Cycle
00h
2nd Cycle
30h
during Busy
Read
Read for Copy Back
Read ID
00h
35h
90h
-
Reset
FFh
-
O
Page Program
80h
10h
10h
D0h
-
Copy-Back Program
Block Erase
Random Data Input(1)
Random Data Output(1)
Read Status
85h
60h
85h
05h
E0h
-
70h
O
O
Read Status 2
F1h
-
Two-Plane Read(3)
60h-60h
60h-60h
00h-05h
80h-11h
85h-11h
60h-60h
80h
30h
35h
E0h
81h-10h
81h-10h
D0h
15h
-
Two-Plane Read for Copy-Back
Two-Plane Random Data Output (1)(3)
Two-Plane Page Program(2)
Two-Plane Copy-Back Program(2)
Two-Plane Block Erase
Cache Program
Cache Read
31h
Read Start For Last Page Cache Read
Two-Plane Cache Read(3)
Two-Plane Cache Program(2)
3Fh
-
60h-60h
80h-11h
33h
81h-15h
NOTE:
1. Random Data Input/Output can be executed in a page.
2. Any command between 11h and 80h/81h/85h is prohibited except 70h/F1h and FFh.
3. Two-Plane Random Data Output must be used after Two-Plane Read operation or Two-Plane Cache Read operation.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 5/55
ESMT
F59L2G81LA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
-0.6 to +4.6
Unit
VCC
VIN
Voltage on any pin relative to VSS
-0.6 to +4.6
V
VI/O
TBIAS
-0.6 to VCC + 0.3 (< 4.6V)
-40 to +125
Temperature Under Bias
Storage Temperature
Short Circuit Current
℃
℃
TSTG
IOS
-65 to +150
5
mA
NOTE:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, TA = 0 to 70℃)
Parameter
Supply Voltage
Supply Voltage
Symbol
VCC
Min.
2.7
0
Typ.
3.3
0
Max.
3.6
0
Unit
V
VSS
V
DC AND OPERATION CHARACTERISTICS
(Recommended operating conditions otherwise noted)
Parameter
Page Read with
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
ICC1
-
15
30
tRC=25ns, CE =VIL, IOUT=0mA
Serial Access
Program
Erase
Operating
Current
mA
ICC2
ICC3
-
-
-
-
15
15
30
30
Stand-by Current (TTL)
ISB1
-
-
-
-
10
-
1
mA
uA
uA
CE =VIH, WP =0V/VCC
Stand-by Current (CMOS)
ISB2
ILI
50
CE = VCC -0.2, WP =0V/ VCC
±10
±10
Input Leakage Current
Output Leakage Current
Input High Voltage
VIN=0 to VCC (max)
ILO
VOUT=0 to VCC (max)
-
0.8 x VCC
-0.3
-
-
-
-
-
uA
V
(1)
VIH
-
VCC +0.3
0.2 x VCC
-
(1)
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
VIL
-
V
VOH
VOL
IOH=-400uA
IOL=2.1mA
2.4
V
-
0.4
V
VOL=0.4V
8
10
-
mA
Output Low Current (R/B )
IOL (R /B )
NOTE:
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less.
2. Typical value are measured at VCC=3.3V, TA=25℃. Not 100% tested.
VALID BLOCK
Symbol
Min.
Typ.
Max.
Unit
NVB
2,008
-
2,048
Block
NOTE:
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The
number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain
one or more bad bits which cause status failure during program and erase operation. Do not erase or program factory-marked bad
blocks. Refer to the attached technical notes for appropriate management of initial invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment and is guaranteed to
be a valid block up to 1K program/erase cycles with 1bit/528Byte ECC.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 6/55
ESMT
F59L2G81LA
AC TEST CONDITION
(TA=0 to 70℃, VCC=2.7V~3.6V, unless otherwise noted)
Parameter
Input Pulse Levels
Condition
0V to VCC
5 ns
Input Rise and Fall Times
Input and Output Timing Levels
VCC /2
Output Load
1 TTL Gate and CL=50pF
NOTE: Refer to Read/Busy section, R/B output’s Busy to Ready time is decided by the pull-up resistor (Rp) tied to the R/ B pin.
CAPACITANCE
(TA=25℃, VCC=3.3V, f=1.0MHz)
Item
Input / Output Capacitance
Input Capacitance
Symbol
CI/O
Test Condition
VIL = 0V
Min.
Max.
Unit
pF
-
-
8
8
CIN
VIN = 0V
pF
NOTE: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
Mode
Command Input
CE
L
WE
RE
H
WP
X
H
L
Read Mode
L
H
L
H
X
Address Input (5 clock)
Command Input
H
L
L
L
L
H
H
H
H
H
H
Write Mode
L
H
Address Input (5 clock)
L
L
Data Input
L
X
X
X
X
X
L
X
L
X
X
X
X
H
H
X
X
X
X
X
X
Data Output
H
X
X
X
X
X
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
X
H
H
X
X(1)
L
(2)
X
0V/VCC
Stand-by
NOTE:
1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 7/55
ESMT
F59L2G81LA
Program / Erase Characteristics
(TA=0 to 70℃, VCC=2.7V~3.6V)
Parameter
Symbol
tPROG
Min.
Typ.
400
3
Max.
950
Unit
us
Average Program Time
-
-
Dummy Busy Time for Cache Operation
tCBSY
950
us
Number of Partial Program Cycles in the
Same Page
NOP
tBERS
tDBSY
-
-
-
3
4
10
1
Cycle
ms
Block Erase Time
Dummy Busy Time for Two-Plane Page
Program
0.5
us
NOTE:
1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V VCC and 25℃
temperature.
2. tPROG is the average program time of all pages. Users should be noted that the program time variation from page to page
is possible.
3. tCBSY max. time depends on timing between internal program completion and data-in.
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min.
Max.
Unit
ns
(1)
CLE Setup Time
tCLS
12
-
-
CLE Hold Time
CE Setup Time
CE Hold Time
tCLH
5
ns
(1)
tCS
20
5
-
-
-
ns
ns
ns
tCH
tWP
12
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
(1)
tALS
12
5
-
-
-
-
-
ns
ns
ns
ns
ns
tALH
(1)
tDS
12
5
tDH
tWC
25
tWH
10
100(2)
-
-
ns
ns
WE High Hold Time
(2)
Address to Data Loading Time
tADL
NOTE:
1. The transition of the corresponding control pins must occur only once while WE is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 8/55
ESMT
F59L2G81LA
AC Characteristics for Operation
Parameter
Symbol
Min.
-
Max.
25
-
Unit
us
Data Transfer from Cell to Register
tR
tAR
10
ns
ALE to RE Delay
tCLR
tRR
tRP
10
20
12
-
-
ns
ns
ns
ns
CLE to RE Delay
-
-
Ready to RE Low
RE Pulse Width
tWB
100
WE High to Busy
WP Low to WE Low (disable mode)
tWW
100
-
ns
WP High to WE Low (enable mode)
Read Cycle Time
tRC
25
-
-
ns
ns
tREA
20
RE Access Time
tCEA
tRHZ
tCHZ
tCSD
tRHOH
tRLOH
tCOH
tREH
tIR
-
-
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CE Access Time
100
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
RE Low to Output Hold
CE High to Output Hold
RE High Hold Time
-
30
-
0
15
5
-
-
15
10
0
-
-
-
Output Hi-Z to RE Low
RE High to WE Low
tRHW
tWHR
100
60
-
-
WE High to RE Low
Read
-
-
-
-
5
us
us
us
us
Program
Erase
10
Device Resetting
Time during ...
tRST
500
5(1)
Ready
Cache Busy in Read Cache (following
31h and 3Fh)
tDCBSYR
-
30
us
NOTE: 1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 9/55
ESMT
F59L2G81LA
NAND Flash Technical Notes
Mask Out Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by ESMT. The
information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s) have the
same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not
affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The
system design must be able to mask out the initial invalid block(s) via address mapping.
The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/
528Byte ECC.
Identifying Initial Invalid Block(s) and Block Replacement Management
All device locations are erased (FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area. ESMT makes sure that either the 1st or 2nd page of every initial
invalid block has non-FFh data at the 1st byte column address in the spare area.
Do not erase or program factory-marked bad blocks. The host controller must be able to recognize the initial invalid block information
and to create a corresponding table to manage block replacement upon erase or program error when additional invalid blocks develop
with Flash memory usage.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 10/55
ESMT
F59L2G81LA
Check “FFh” at the 1st Byte column address in
the spare area of the 1st and 2nd page in the
block.
For (i=0; i<Num_of_LUs; i++)
{
For (j=0; j<Blocks_Per_LU; j++)
{
Defect_Block_Found=False;
Read_Page(lu=i, block=j, page=0);
If (Data[coloumn= First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True;
Read_Page(lu=i, block=j, page=1);
If (Data[coloumn= First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True;
If (Defect_Block_Found)
Mark_Block_as_Defective(lu=i, block=j);
}
}
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 11/55
ESMT
F59L2G81LA
Error in Write or Read Operation
Within its lifetime, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.
The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after
erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of
the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and
reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To
improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by
ECC without any block replacement. The additional block failure rate does not include those reclaimed blocks.
Failure Mode
Erase failure
Detection and Countermeasure sequence
Read Status after Erase → Block Replacement
Read Status after Program → Block Replacement
Verify ECC → ECC Correction
Write
Read
Program failure
Up to 1 bits failure
NOTE: Error Correcting Code → RS Code or BCH Code etc.
Example: 1bit correction / 528 Byte
Program Flow Chart
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 12/55
ESMT
F59L2G81LA
Erase Flow Chart
Read Flow Chart
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0
13/55
ESMT
F59L2G81LA
Block Replacement
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (Least Significant Bit) page of the block to MSB (Most
Significant Bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB
among the pages to be programmed. Therefore, LSB page doesn’t need to be page 0.
(64)
(64)
Page 63
Page 63
:
(32)
:
:
(1)
:
Page 31
Page 31
Page 2
Page 1
Page 0
Page 2
Page 1
Page 0
(3)
(2)
(1)
(3)
(32)
(2)
Data register
Data register
From the LSB page to MSB page
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
DATA IN: Data (1)
Data (64)
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 14/55
ESMT
F59L2G81LA
System Interface Using CE Don’t Care
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio
applications that use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would
provide significant savings in power consumption.
Program/Read Operation with ”CE not-care”
Address Information
I/O
I/Ox
DATA
ADDRESS
Row Add1
A12 ~ A19
Data In / Out
2112 bytes
Col. Add1
Col. Add2
Row Add2
Row Add3
I/O0~7
A0 ~ A7
A8 ~ A11
A20 ~ A27
A28
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Timing Diagrams
Command Latch Cycle
Address Latch Cycle
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Input Data Latch Cycle
Serial Access Cycle after Read (CLE = L, ALE = L, WE = H)
NOTE:
1. Dout transition is measured at ±200mV from steady state voltage at I/O with load.
2.
tRHOH starts to be valid when frequency is lower than 20MHz.
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Serial Access Cycle after Read (EDO Type CLE = L, ALE = L, WE = H)
NOTE:
1. Transition is measured at ±200mV from steady state voltage with load.
This parameter is sample and not 100% tested. (tCHZ, tRHZ
)
2. tRLOH is valid when frequency is higher than 33MHZ.
t
RHOH starts to be valid when frequency is lower than 33MHZ.
Status Read Cycle
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Read Operation (Read One Page)
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Read Operation (Intercepted byCE)
Random Data Output In a Page
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Page Program Operation
Page Program Operation with Random Data Input
NOTE: tADL is the time from the WE rising edge of final address cycle to the WE rising edge of the first data cycle.
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Copy-Back Operation with Random Data Input
Cache Program Operation
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Cache Read Operation
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Block Erase Operation
Read ID Operation
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Two-plane Page Read Operation with Two-plane Random Data Out
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Two-plane Cache Read Operation
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Two-plane Page Program Operation
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Two-plane Cache Program Operation
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Two-plane Block Erase Operation
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ID Definition Table
ID Access command = 90H
1st Cycle
(Maker Code)
2nd Cycle
(Device Code)
3rd Cycle
4th Cycle
5th Cycle
C8h
DAh
90h
95h
46h
Item
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
Maker Code
Device Code
Internal Chip Number, Cell Type, etc
Page Size, Block Size, etc
Plane Number, Plane Size, ECC Level
3rd ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1
2
4
8
0
0
1
1
0
1
0
1
Internal Chip Number
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
0
0
1
1
0
1
0
1
0
0
1
1
0
1
0
1
Number of
Simultaneously
Programmed Page
Not Support
Support
Not Support
Support
0
1
Interleave Program
Between multiple chips
0
1
Cache Program
4th ID Data
Item
Description
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1KB
2KB
4KB
8KB
0
0
1
1
0
1
0
1
Page Size
(w/o redundant area)
8
16
0
1
Redundant Area Size
(byte/512byte)
64KB
128KB
256KB
512KB
x8
0
0
1
1
0
1
0
1
Block Size
(w/o redundant area)
0
1
Organization
x16
45ns
Reserved
25ns
Reserved
0
0
1
1
0
1
0
1
Serial Access Time
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5th ID Data
Item
Description
4bit/528B
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
0
I/O0
0
2bit/528B
0
1
ECC Level
1bit/528B
1
0
Reserved
1
2
4
8
1
1
0
0
1
1
0
1
0
1
Plane Number
64Mb
128Mb
256Mb
512Mb
1Gb
2Gb
4Gb
8Gb
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Plane Size
(w/o redundant area)
Reserved
Reserved
0
0
0
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DEVICE OPERATION
Page Read
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h command, five-cycle
address, and 30h command. After initial power up, the 00h command can be skipped because it has been latched in the command
register. The 2,112Byte of data on a page are transferred to cache registers via data registers within 25us (tR). Host controller can
detect the completion of this data transfer by checking the R/B output. Once data in the selected page have been loaded into cache
registers, each Byte can be read out in 25ns cycle time by continuously pulsing RE . The repetitive high-to-low transitions of RE
clock signal make the device output data starting from the designated column address to the last column address.
The device can output data at a random column address instead of sequential column address by using the Random Data Output
command. Random Data Output command can be executed multiple times in a page.
After power up, device is in read mode so 00h command cycle is not necessary to start a read operation.
A page read sequence is illustrated in the following figure, where column address, page address are placed in between commands 00h
and 30h. After tR read time, the R/B de-asserts to ready state. Read Status command (70h) can be issued right after 30h. Host
controller can toggle RE to access data starting with the designated column address and their successive bytes.
Read Operation
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Random Data Output In a Page
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Page Program
The device is programmed based on the unit of a page, and consecutive partial page programming on one page without intervening
erase operation is strictly prohibited. Addressing of page program operations within a block should be in sequential order. A complete
page program cycle consists of a serial data input cycle in which up to 2,112byte (1,056word) of data can be loaded into data register
via cache register, followed by a programming period during which the loaded data are programmed into the designated memory cells.
The serial data input cycle begins with the Serial Data Input command (80h), followed by a five-cycle address input and then serial data
loading. The bytes not to be programmed on the page do not need to be loaded. The column address for the next data can be changed
to the address follows Random Data Input command (85h). Random Data Input command may be repeated multiple times in a page.
The Page Program Confirm command (10h) starts the programming process. Writing 10h alone without entering data will not initiate
the programming process. The internal write engine automatically executes the corresponding algorithm and controls timing for
programming and verification, thereby freeing the host controller for other tasks. Once the program process starts, the host controller
can detect the completion of a program cycle by monitoring the R/B output or reading the Status bit (I/O6) using the Read Status
command. Only Read Status and Reset commands are valid during programming. When the Page Program operation is completed,
the host controller can check the Status bit (I/O0) to see if the Page Program operation is successfully done. The command register
remains the Read Status mode unless another valid command is written to it.
A page program sequence is illustrated in following figure, where column address, page address, and data input are placed in between
80h and 10h. After tPROG program time, the R/B de-asserts to ready state. Read Status command (70h) can be issued right after 10h.
Program & Read Status Operation
Random Data Input In a page
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Cache Program
Cache Program is an extension of Page Program, which is executed with 2,112 byte (x8) data registers, and is available only within a
block. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are
programmed into memory cell.
After writing the first set of data up to 2,112 bytes (x8) into the selected cache registers, Cache Program command (15h) instead of
actual Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from
cache registers to data registers, the device remains in Busy state for a short period of time (tCBSY) and has its cache registers ready for
the next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h)
may be issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O6). Pass/fail status of only the
previous page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command,
t
CBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the
pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit (I/O5)
for internal Ready/Busy may be polled to identity the completion of internal programming. If the system monitors the progress of
programming only with R/B , the last page of the target programming sequence must be programmed with actual Page Program
command (10h).
Cache Program (available only within a block)
NOTE:
1. Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the
previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after
completion of the previous cycle, which can be expressed as the following formula.
2.
t
PROG = Program time for the last page + Program time for the (last-1)th page – (Program command cycle time + Last page data
loading time)
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Copy-Back Program
Copy-Back Program is designed to efficiently copy data stored in memory cells without time-consuming data reloading when there is
no bit error detected in the stored data. The benefit is particularly obvious when a portion of a block is updated and the rest of the block
needs to be copied to a newly assigned empty block. Copy-Back operation is a sequential execution of Read for Copy-Back and of
Copy-Back Program with Destination address. A Read for Copy-Back operation with “35h” command and the Source address moves
the whole 2,112 byte data into the internal buffer. The host controller can detect bit errors by sequentially reading the data output.
Copy-Back Program is initiated by issuing Page-Copy Data-Input command (85h) with Destination address. If data modification is
necessary to correct bit errors and to avoid error propagation, data can be reloaded after the Destination address. Data modification
can be repeated multiple times as shown in the following figure. Actual programming operation begins when Program Confirm
command (10h) is issued. Once the program process starts, the Read Status command (70h) may be entered to read the status
register. The host controller can detect the completion of a program cycle by monitoring the R/ B output, or the Status bit (I/O6) of the
Status Register. When the Copy-Back Program is complete, the Status Bit (I/O0) may be checked. The command register remains
Read Status mode until another valid command is written to it.
Page Copy-Back Program Operation
Page Copy-Back Program Operation with Random Data Input
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Block Erase
The block-based Erase operation is initiated by an Erase Setup command (60h), followed by a three-cycle row address, in which only
Plane address and Block address are valid while Page address is ignored. The Erase Confirm command (D0h) following the row
address starts the internal erasing process. The two-step command sequence is designed to prevent memory content from being
inadvertently changed by external noise.
At the rising edge of WE after the Erase Confirm command input, the internal control logic handles erase and erase-verify. When the
erase operation is completed, the host controller can check Status bit (I/O0) to see if the erase operation is successfully done. The
following figure illustrates a block erase sequence, and the address input (the first page address of the selected block) is placed in
between commands 60h and D0h. After tBERS erase time, the R/B de-asserts to ready state. Read Status command (70h) can be
issued right after D0h to check the execution status of erase operation.
Block Erase Operation
Read Status
A status register on the device is used to check whether program or erase operation is completed and whether the operation is
completed successfully. After writing 70h/F1h command to the command register, a read cycle outputs the content of the status
register to I/O pins on the falling edge of CE or RE , whichever occurs last. These two commands allow the system to poll the
progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to
toggle for status change.
The command register remains in Read Status mode unless other commands are issued to it. Therefore, if the status register is read
during a random read cycle, a read command (00h) is needed to start read cycles.
Status Register Definition for 70h Command
Cache
I/O
Page Program
Block Erase
Pass / Fail
NA
Read
NA
Cache Read
Definition
Program
Pass: ”0”
Fail: ”1”
Pass / Fail
(N)
I/O0
I/O1
Pass / Fail
NA
NA
NA
Pass / Fail
(N-1)
NA
Don’t cared
(Pass/Fail, OTP)
I/O2
I/O3
I/O4
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
Don’t cared
Don’t cared
Don’t cared
Busy: ”0”
Ready: ”1”
True Ready /
Busy
True Ready /
Busy
I/O5
I/O6
I/O7
NA
NA
NA
Busy: ”0”
Ready: ”1”
Ready /
Busy
Ready /
Busy
Ready /
Busy
Ready / Busy
Write Protect
Ready / Busy
Write Protect
Protected: ”0”
Not Protected: ”1”
Write Protect Write Protect Write Protect
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Status Register Definition for F1h Command
Cache
Program
I/O
Page Program
Block Erase
Read
NA
Cache Read
Definition
Chip Pass /
Fail (N)
Pass: ”0”
Fail: ”1”
Chip Pass /
Fail
Chip Pass /
Fail
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
NA
NA
NA
NA
NA
Pass: ”0”
Fail: ”1”
Plane0 Pass /
Fail
Plane0 Pass /
Fail
Plane0 Pass /
Fail (N)
NA
Pass: ”0”
Fail: ”1”
Plane1 Pass /
Fail
Plane1 Pass /
Fail
Plane1 Pass /
Fail (N)
NA
Pass: ”0”
Fail: ”1”
Plane0 Pass /
Fail (N-1)
NA
NA
NA
NA
NA
Pass: ”0”
Fail: ”1”
Plane1 Pass /
Fail (N-1)
NA
True Ready /
Busy
Busy: ”0”
Ready: ”1”
True Ready /
Busy
NA
NA
NA
Busy: ”0”
Ready: ”1”
Ready /
Busy
Ready / Busy
Write Protect
Ready / Busy
Write Protect
Ready / Busy
Write Protect
Ready / Busy
Write Protect
Protected: ”0”
Not Protected: ”1”
Write Protect
NOTE:
1. I/Os defined NA are recommended to be masked out when Read Status is being executed.
2. n : current page, n-1 : previous page.
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Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h.
Five read cycles sequentially output the manufacturer code (C8h), and the device code and 3rd, 4th, 5th cycle ID respectively. The
command register remains in Read ID mode until further commands are issued to it.
Read ID Operation
ID Definition Table
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
(Maker Code)
(Device Code)
C8h
DAh
90h
95h
46h
Reset
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer
valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the
Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be
accepted by the command register. The R/B pin changes to low for tRST after the Reset command is written. Refer to the following
figure.
Device Status
After Power-up
After Reset
Operation mode
00h Command is latched
Waiting for next command
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Cache Read
Cache Read is an extension of Page Read, and is available only within a block. The normal Page Read command (00h-30h) is always
issued before invoking Cache Read. After issuing the Cache Read command (31h), read data of the designated page (page N) are
transferred from data registers to cache registers in a short time period of tDCBSYR, and then data of the next page (page N+1) is
transferred to data registers while the data in the cache registers are being read out. Host controller can retrieve continuous data and
achieve fast read performance by iterating Cache Read operation. The Read Start for Last Page Cache Read command (3Fh) is used
to complete data transfer from memory cells to data registers.
Read Operation with Cache Read
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Two-Plane Page Read
Two-Plane Page Read is an extension of Page Read, for a single plane with 2,112 byte data registers. Since the device is equipped
with two memory planes, activating the two sets of 2,112 byte data registers enables a random read of two pages. Two-Plane Page
Read is initiated by repeating command 60h followed by three address cycles twice. In this case, only same page of same block can be
selected from each plane.
After Read Confirm command (30h) the 4,224 bytes of data within the selected two page are transferred to the cache registers via data
registers in less than 25us (tR). The system controller can detect the completion of data transfer (tR) by monitoring the output of R/B
pin.
Once the data is loaded into the cache registers, the data output of first plane can be read out by issuing command 00h with five
address cycles, command 05h with two column address and finally E0h. The data output of second plane can be read out using the
identical command sequences.
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Two-Plane Cache Read
Two-Plane Cache Read is an extension of Cache Read, for a single plane with 2,112 byte data registers. Since the device is equipped
with two memory planes, the two sets of 2,112 byte data registers enables a cache read of two pages. Two-Plane Cache Read is
initiated by repeating command 60h followed by three address cycles twice. In this case only same page of same block can be selected
from each plane.
After Read Confirm command(33h) the 4,224 bytes of data within the selected two page are transferred to the cache registers via data
registers in less than 25us (tR). After issuing Cache Read command (31h), read data in the data registers is transferred to cache
registers for a short period of time (tDBSY). Once the data is loaded into the cache registers from data registers, the data output of first
plane can be read out by issuing command 00h with five address cycles, command 05h with two column address and finally E0h. The
data output of second plane can be read out using the identical command sequences.
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Two-Plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2,112 byte data registers. Since the device is
equipped with two memory planes, activating the two sets of 2112 byte data registers enables a simultaneous programming of two
pages.
After writing the first set of data up to 2,112 byte into the selected data registers via cache registers, Dummy Page Program command
(11h) instead of actual Page Program command (10h) is inputted to finish data-loading of the first plane. Since no programming
process is involved, R/B remains in busy state for a short period of time (tDBSY). Read Status command (70h) may be issued to find out
when the device returns to ready state by polling the R/B status bit (I/O 6). Then the next set of data for the other plane is inputted after
81h command and address sequences. After inputting data for the last page, actual True Page Program (10h) instead of dummy Page
Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as
that of Page Program. Although two planes are programmed simultaneously, pass/fail is not available for each page when the program
operation completes. Status bit of I/O 0 is set to “1” when any of the pages fails.
Two-Plane Copy-Back Program
Two-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 2,112 byte data registers. Since the
device is equipped with two memory planes, activating the two sets of 2,112 byte data registers enables a simultaneous programming
of two pages.
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Two-Plane Copy-Back Program
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Two-Plane Copy-Back Program with Random Data Input
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Two-Plane Cache Program
Two-Plane Cache Program is an extension of Cache Program, for a single plane with 2,112 byte data registers. Since the device is
equipped with two memory planes, activating the two sets of 2,112 byte data registers enables a simultaneous programming of two
pages.
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Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command 60h followed by three
address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane. The
Erase Confirm command (D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/Busy
status bit (I/O 6).
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Ready / Busy
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transition to low after program or erase command is written to the command
register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The
pin is an open-drain driver thereby allowing two or more R/ B outputs to be Or-tied. Because pull-up resistor value is related to tr (R/B )
and current drain during busy (ibusy), an appropriate value can be obtained with the following reference chart (the following figure). Its
value can be determined by the following guidance.
Read / Busy Pin Electrical Specifications
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Data Protection & Power Up Sequence
The timing sequence shown in the following figure is necessary for the power-on/off sequence.
The device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. During the
initialization the device R/B signal indicates the Busy state as shown in the following figure. In this time period, the acceptable
commands are 70h.
The WP signal is useful for protecting against data corruption at power on/off.
AC Waveforms for Power Transition
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Write Protect Operation
Enabling WP during erase and program busy is prohibited. The erase and program operations are enabled and disabled as follows:
Enable Programming
Disable Programming
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Enable Erasing
Disable Erasing
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PACKING DIMENSION
48-LEAD
TSOP(I) ( 12x20 mm )
Dimension in mm
Min Norm Max
------- ------- 1.20 ------- ------- 0.047
0.05 ------- 0.15 0.006 ------- 0.002
Dimension in inch
Min Norm Max
Dimension in mm
Min Norm Max
20.00 BSC
Dimension in inch
Min Norm Max
0.787 BSC
Symbol
Symbol
A
A 1
A 2
b
b1
c
D
D 1
E
e
L
18.40 BSC
12.00 BSC
0.50 BSC
0.724 BSC
0.472 BSC
0.020 BSC
0.95 1.00
0.17 0.22
0.17 0.20
1.05 0.037 0.039 0.041
0.27 0.007 0.009 0.011
0.23 0.007 0.008 0.009
0.50 0.60
0O
-------
0.70 0.020 0.024 0.028
8O 0O 8O
-------
0.10 ------- 0.21 0.004 ------- 0.008
0.10 ------- 0.16 0.004 ------- 0.006
θ
c1
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 52/55
ESMT
F59L2G81LA
PACKING DIMENSIONS
63-BALL
NAND Flash ( 9x11 mm )
E
Pin #1
D
A2
A
A1
Seating plane
C
ccc C
Detail A
Detail A
e
e
Solder ball
e
e
b
D1
Detail B
Pin #1
Index
E1
Detail B
Dimension in mm
Dimension in inch
Symbol
Min
Norm
Max
1.00
0.35
Min
Norm
Max
0.039
0.014
_________
_________
_________
_________
A
A1
A2
Φb
D
_________
_________
0.25
0.010
0.60 BSC
0.024 BSC
0.40
10.90
8.90
0.50
11.10
9.10
0.016
0.429
0.350
0.020
0.437
0.358
11.00
9.00
0.433
0.354
E
D1
E1
e
8.80 BSC
7.20 BSC
0.346 BSC
0.283 BSC
0.8 BSC
0.031 BSC
_________
_________
_________
_________
ccc
0.10
0.004
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 53/55
ESMT
F59L2G81LA
Revision History
Revision
Date
Description
1.0
2016.05.12
Original
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0
54/55
ESMT
F59L2G81LA
Important Notice
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the time of publication. ESMT assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
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No license, either express , implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of ESMT or
others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2016
Revision: 1.0 55/55
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