F49L040A-90N [ESMT]
4 Mbit (512K x 8) 3V Only CMOS Flash Memory; 4兆位（ 512K ×8 ）只有3V CMOS闪存
| 型号： | F49L040A-90N |
| 厂家： | 
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. |
| 描述： | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| 文件： | 总41页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFST
F49L040A
4 Mbit (512K x 8)
3V Only CMOS Flash Memory
1. FEATURES
ꢀ
ꢀ
ꢀ
Single supply voltage 3.0V-3.6V
ꢀ
ꢀ
End of program or erase detection
- Data polling
Fast access time: 70/90 ns
Compatible with JEDEC standard
- Pin-out, packages and software commands
compatible with single-power supply Flash
Low power consumption
- Toggle bits
Sector Protection /Un-protection
- Hardware Protect/Unprotect any combination of sectors
from a program or erase operation.
Low VCC Write inhibit is equal to or less than 2.0V
Boot Sector Architecture
ꢀ
- 7mA typical active current
ꢀ
ꢀ
- 25uA typical standby current
10,000 minimum program/erase cycles
Command register architecture
ꢀ
ꢀ
- U = Upper Boot Sector
- B = Bottom Boot Sector
Packages available:
- Byte programming (9us typical)
- Sector Erase(sector structure: eight 64 KB)
Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased
concurrently; Chip erase also provided.
- Automatically program and verify data at specified
address
ꢀ
- 32-pin TSOPI
- 32-pin PLCC
ꢀ
ꢀ
Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
2. ORDERING INFORMATION
Part No
Boot
Speed
Package
Part No
Boot
Speed
Package
F49L040A-70T
F49L040A-70N
Upper/Bottom
Upper/Bottom
70 ns
70 ns
TSOPI
PLCC
F49L040A-90T
F49L040A-90N
Upper/Bottom
Upper/Bottom
90 ns
90 ns
TSOPI
PLCC
3. GENERAL DESCRIPTION
The F49L040A is a 4 Megabit, 3V only CMOS Flash
memory device organized as 512K bytes of 8 bits. This
device is packaged in standard 32-pin TSOPI and 32-pin
PLCC. It is designed to be programmed and erased both
in system and can in standard EPROM programmers.
The F49L040A features a sector erase architecture.
The device memory array is divided into eight 64 Kbytes.
Sectors can be erased individually or in groups without
affecting the data in other sectors. Multiple-sector erase
and whole chip erase capabilities provide the flexibility to
revise the data in the device.
With access times of 70 ns and 90 ns, the F49L040A
allows the operation of high-speed microprocessors. The
The sector protect/unprotect feature disables both
program and erase operations in any combination of the
sectors of the memory. This can be achieved in-system or
via programming equipment.
device has separate chip enable
, write enable
,
WE
CE
and output enable
controls. EFST's memory devices
OE
reliably store memory data even after 100,000 program
and erase cycles.
A low VCC detector inhibits write operations on loss of
power. End of program or erase is detected by the Data
Polling of DQ7, or by the Toggle Bit I feature on DQ6.
Once the program or erase cycle has been successfully
completed, the device internally resets to the Read mode.
The F49L040A is entirely pin and command set
compatible with the JEDEC standard for 4 Megabit Flash
memory devices. Commands are written to the command
register using standard microprocessor write timings.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
1/41
EFST
4. PIN CONFIGURATIONS
4.1 32-pin TSOP I
F49L040A
OE
A10
CE
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
F49L040A
9
10
11
12
13
14
15
16
A1
A2
A3
A6
A5
A4
4.2 32-pin PLCC
4
3
2
1 32 31 30
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
2 9
2 8
2 7
2 6
2 5
2 4
2 3
2 2
2 1
5
A7
A6
A5
A4
A3
A2
A1
A0
6
7
8
9
10
11
12
13
DQ0
14 15 16 17 18 19 20
4.3 Pin Description
Symbol
A0~A18
Pin Name
Address Input
Functions
To provide memory addresses.
To output data when Read and receive data when Write.
The outputs are in tri-state when OE or CE is high.
DQ0~DQ7
Data Input/Output
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
CE
OE
To activate the device when CE is low.
To gate the data output buffers.
To control the Write operations.
To provide power
WE
VCC
GND
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 2/41
EFST
F49L040A
5. SECTOR STRUCTURE
Table 1: F49L040A Sector Address Table
Sector Address
A18 A17 A16 A15 A14 A13
Sector Size
Sector
Address range
(Kbytes)
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
64
64
64
64
64
64
64
64
70000H-7FFFFH
60000H-6FFFFH
50000H-5FFFFH
40000H-4FFFFH
30000H-3FFFFH
20000H-2FFFFH
10000H-1FFFFH
00000H-0FFFFH
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 3/41
EFST
F49L040A
6. FUNCTIONAL BLOCK DIAGRAM
WRITE
STATE
PROGRAM / ERASE
HIGH VOLTAGE
CONTROL
INPUT
CE
OE
WE
MACHING
(WSM)
LOGIC
STATE
REGISTER
F49L040A
FLASH
ARRAY
ADDRESS
LATCH
AND
ARRAY
SOURCE
HV
A0~A18
BUFFER
COMMAND
DATA
Y-PASS GATE
DECODER
PGM
DATA
HV
SENSE
COMMAND
AMPLIFIER
DATA LATCH
PROGRAM
DATA LATCH
I / O BUFFER
DQ0~DQ7
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
4/41
EFST
F49L040A
7. FUNCTIONAL DESCRIPTION
7.1 Device operation
This section describes the requirements and use
of the device bus operations, which are initiated
through the internal command register. The
register is composed of latches that store the
command, address and data information needed
to execute the command. The contents of the
register serve as inputs to the internal state
machine. The state machine outputs dictate the
function of the device. The F49L040A features
various bus operations as Table 2.
Table 2. F49L040A Operation Modes Selection
ADDRESS
A18 A12
A8
A5
|
DESCRIPTION
DQ0~DQ7
OE
CE
WE
|
|
|
A9
A6
A1 A0
A13 A10
A7
A2
Read
Write
L
L
L
H
L
AIN
Dout
DIN
H
AIN
Output Disable
Standby
L
H
H
X
H
H
X
L
X
X
High Z
High Z
DIN
Sector Protect(2)
L
L
SA
SA
X
X
VID
VID
X
L
X
X
H
H
L
L
Sector Unprotect(2)
Auto-select
H
L
X
H
DIN
See Table 3
Notes:
1. L= Logic Low = VIL, H= Logic High = VIH, X= Don't Care, SA= Sector Address, VID=11.5V to 12.5V.
AIN= Address In, DIN = Data In, Dout = Data Out.
2. The sector protect and unprotect functions may also be implemented via programming equipment.
Table 3. F49L040A Auto-Select Mode (High Voltage Method)
ADDRESS
DQ0~DQ7
A18
|
A12
|
A8
DESCRIPTION
OE
CE
WE
|
A9
A6 A3 A2 A1 A0
A13
A10
A4
X
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
VID
VID
VID
VID
VID
VID
X
X
X
X
X
L
L
H
H
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
7FH
7FH
X
(Manufacturer ID:EFST)
X
X
H
L
7FH
X
X
8CH
(Device ID: F49L040A)
Sector Protection Verify
X
X
X
X
X
X
4FH
SA
X
Code(2)
Notes :
1.Manufacturer and device codes may also be accessed via the software command sequence in Table 4.
2. Code=00H means unprotected.
Code =01H means protected.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 5/41
EFST
F49L040A
Read Mode
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain unchanged for over
250ns. The automatic sleep mode is independent of the
To read array data from the outputs, the system must
drive the
and
pins to VIL.
is the power
CE
OE
CE
control and selects the device.
is the output control
OE
and gates array data to the output pins.
should
WE
,
, and
control signals. Standard address
OE
WE
CE
remain at VIH. The internal state machine is set for
reading array data upon device power-up, or after a
hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power
transition.
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. ICC4 in the DC
Characteristics Table 8 represents the automatic sleep
mode current specification.
No command is necessary in this mode to obtain array
data. Standard microprocessor’s read cycles that assert
valid addresses on the device address inputs produce
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
Output Disable Mode
With the
is at a logic high level (V ), outputs from
IH
OE
the devices are disabled. This will cause the output pins
in a high impedance state
See “Read Command” section for more information.
Refer to the AC Read Operations Table 9 for timing
specifications and to Figure 5 for the timing diagram. ICC1
in the DC Characteristics Table 8 represents the active
current specification for reading array data.
Standby Mode
When
held at V
± 0.3V, the device enter
CE
CMOS Standby mode. If
CC
held at V , but not within
CE
IH
the range of V
± 0.3V, the device will still be in the
CC
Write Mode
standby mode, but the standby current will be larger.
To write a command or command sequence (which
includes programming data to the device and erasing
If the device is deselected during auto algorithm of
erasure or programming, the device draws active
sectors of memory), the system must drive
and
CE
WE
current I
until the operation is completed. I
in
CC2
CC3
to VIL, and
to VIH. The “Program Command” section
OE
the DC Characteristics Table 8 represents the standby
current specification.
has details on programming data to the device using
standard command sequences.
The device requires standard access time (t ) for
CE
An erase operation can erase one sector, multiple sectors,
or the entire device. Table 1 indicate the address space
that each sector occupies. A “sector address” consists of
the address bits required to uniquely select a sector. The
“Software Command Definitions” section has details on
erasing a sector or the entire chip, or suspending/resuming
the erase operation.
read access from either of these standby modes,
before it is ready to read data.
Sector Protect / Un-protect Mode
The hardware sector protect feature disables both
program and erase operations in any sector. The
hardware sector unprotect feature re-enables both the
program and erase operations in previously protected
sectors. Sector protect/unprotect can be implemented
A6 pin via programming equipment.
When the system writes the auto-select command
sequence, the device enters the auto-select mode. The
system can then read auto-select codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Auto-select Mode and Auto-select
Command sections for more information. ICC2 in the DC
Characteristics Table 8 represents the active current
specification for the write mode. The “AC Characteristics”
section contains timing specification Table 10 and timing
diagrams for write operations.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
6/41
EFST
F49L040A
Figure 16 shows the algorithms and Figure 15 shows
the timing diagram. This method uses standard
microprocessor bus cycle timing. For sector unprotect,
all unprotected sectors must first be protected prior to
the first sector unprotect write cycle.
When using programming equipment, this mode
requires V (11.5 V to 12.5 V) on address pin A9.
ID
While address pins A3, A2, A1, and A0 must be as
shown in Table 3.
To verify sector protection, all necessary pins have to
be set as required in Table 3, the programming
equipment may then read the corresponding identifier
code on DQ7-DQ0.
Auto-select Mode
The auto-select mode provides manufacturer and
device identification and sector protection verification,
through outputs on DQ7–DQ0. This mode is primarily
intended for programming equipment to automatically
To access the auto-select codes in-system, the host
system can issue the auto-select command via the
command register, as shown in Table 4. This method
match
a
device to be programmed with its
corresponding programming algorithm. However, the
auto-select codes can also be accessed in-system
through the command register.
does not require V . See “ Software Command
ID
Definitions” for details on using the auto-select mode.
7.2 Software Command Definitions
Writing specific address and data commands or
sequences into the command register initiates the
device operations. Table 4 defines the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
resets the device to reading array data.
All addresses are latched on the falling edge of
WE
or
, whichever happens later. All data is latched on
CE
the rising edge of
or
, whichever happens
WE
CE
first. Refer to the corresponding timing diagrams in
the AC Characteristics section.
Table 4. F49L040A Software Command Definitions
1st Bus 2nd Bus 3rd Bus 4th Bus
5th Bus
Cycle
6th Bus
Cycle
Bus
Cycle Cycle Cycle Cycle
Command
Cycles
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Reset (5)
Read (4)
1
1
4
6
6
XXXH F0H
RA RD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Program
555H AAH 2AAH 55H 555H A0H
PA
PD
Chip Erase
Sector Erase
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H
SA
30H
Sector Erase
Suspend (6)
1
1
XXXH B0H
XXXH 30H
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sector Erase Resume
(7)
-
-
-
Auto-select
See Table 5.
Notes:
1. X = don’t care
RA = Address of memory location to be read.
RD = Data to be read at location RA.
PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
2. Except Read command and Auto-select command, all command bus cycles are write operations.
3. Address bits A18–A16 are don’t cares.
4. No command cycles required when reading array data.
5. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
6. The Erase Resume command is valid only during the Erase Suspend mode.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 7/41
EFST
F49L040A
Table 5. F49L040A Auto-Select Command
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Bus
Command
Cycles
Addr Data
Addr Data Addr Data Addr Data Addr Data Addr Data
4
4
4
4
555H AAH 2AAH 55H 555H 90H X04H 7FH
555H AAH 2AAH 55H 555H 90H X08H 7FH
555H AAH 2AAH 55H 555H 90H X0CH 7FH
555H AAH 2AAH 55H 555H 90H X00H 8CH
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Manufacture ID
Device ID, Upper
boot
4
4
555H AAH 2AAH 55H 555H 90H X01H 4FH
-
-
-
-
-
-
-
-
(SA) 00H
555H AAH 2AAH 55H 555H 90H
x02H 01H
Sector Protect Verify
Notes :
1. The fourth cycle of the auto-select command sequence is a read cycle.
2. For Sector Protect Verify operation: If read out data is 01H, it means the sector has been protected. If read
out data is 00H, it means the sector is still not being protected.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 8/41
EFST
F49L040A
Reset Command
Program Command
Writing the reset command to the device resets the
device to reading array data. Address bits are all don’t
cares for this command.
The program command sequence programs one byte
into the device. Programming is a four-bus-cycle
operation. The program command sequence is initiated
by writing two unlock write cycles, followed by the
program set-up command. The program address and
data are written next, which in turn initiate the
Embedded Program algorithm. The system is not
required to provide further controls or timings. The
device automatically provides internally generated
program pulses and verifies the programmed cell
margin.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading
array data. Once erasure begins, however, the device
ignores reset commands until the operation is
complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
DQ7 and DQ6. See “Write Operation Status” section
for more information on these status bits.
The reset command may be written between the
sequence cycles in an auto-select command sequence.
Once in the auto-select mode, the reset command must
be written to return to reading array data (also applies
to auto-select during Erase Suspend).
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that a
hardware
reset
immediately
terminates
the
programming operation. The Program command
sequence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
If DQ5 goes high(see “DQ5: Exceeded Timing Limits”
section) during a program or erase operation, writing
the reset command returns the device to reading array
data (also applies during Erase Suspend).
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
“0” back to a “1”. Attempting to do so may halt the
operation and set DQ5 to “1”, or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still “0”. Only erase operations can convert a “0” to a
“1”.
Read Command
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
Chip Erase Command
Chip erase is a six-bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm.
When the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again read
array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more
information on this mode.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase.
The system must issue the reset command to
re-enable the device for reading array data if DQ5 goes
high, or while in the auto-select mode. See the “Reset
Command” section. See also the “Read Mode” in the
“Device Operations” section for more information. Refer
to Figure 5 for the timing diagram.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. Note that a
hardware reset during the chip erase operation
immediately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
device has returned to reading array data, to ensure
the data integrity.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
9/41
EFST
F49L040A
operation. The Sector Erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure the data integrity.
The system can determine the status of the erase
operation by using DQ7, DQ6 or DQ2. See “Write
Operation Status” section for more information on these
status bits.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6 or
DQ2. (Refer to “Write Operation Status” section for
more information on these status bits.)
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. See the Erase/Program Operations
Table 11 in “AC Characteristics” for parameters.
Refer to the Erase/Program Operations Table 11 in the
“AC Characteristics” section for parameters.
Sector Erase Command
Sector erase is a six-bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command.
Sector Erase Suspend/Resume Command
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure (The device “erase suspends” all sectors
selected for erasure.). This command is valid only
during the sector erase operation, including the 50 µs
time-out period during the sector erase command
sequence. The Erase Suspend command is ignored if
written during the chip erase operation or Embedded
Program algorithm. Addresses are “don’t-cares” when
writing the Erase Suspend command as shown in
Table 4.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase
algorithm automatically programs and verifies the
sector for an all zero data pattern prior to electrical
erase. The system is not required to provide any
controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number
of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than
50 µs, otherwise the last address and command might
not be accepted, and erasure may begin.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately
terminates the time-out period and suspends the erase
operation.
It is recommended that processor interrupts be disabled
during this time to ensure all commands are accepted.
The interrupts can be re-enabled after the last Sector
Erase command is written. If the time between
additional sector erase commands can be assumed to
be less than 50 µs, the system need not monitor DQ3.
Reading at any address within erase-suspended
sectors produces status data on DQ7–DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if
a sector is actively erasing or is
erase-suspended. See “Write Operation Status”
section for more information on these status bits.
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the device to
reading array data. The system must rewrite the
command sequence and any additional sector
addresses and commands.
After an erase-suspended program operation is
complete, the system can once again read array data
within non-suspended sectors. The system can
determine the status of the program operation using
the DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for
more information.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
The system may also write the auto-select command
sequence when the device is in the Erase Suspend
mode. The device allows reading auto-select codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the auto-select mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation.
edge of the final WE pulse in the command
sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the
Elite Flash Storage Technology Inc.
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EFST
F49L040A
The system must write the Erase Resume command
(address bits are “don’t care” as shown in Table 4) to
exit the erase suspend mode and continue the sector
erase operation. Further writes of the Resume
command are ignored. Another Erase Suspend
command can be written after the device has resumed
erasing.
The auto-select command sequence is initiated by
writing two unlock cycles, followed by the auto-select
command. The device then enters the auto-select
mode, and the system may read at any address any
number of times, without initiating another command
sequence. The read cycles at address 04H, 08H, 0CH,
and 00H retrieves the EFST manufacturer ID. A read
cycle at address 01H retrieves the device ID. A read
cycle containing a sector address (SA) and the
address 02H returns 01H if that sector is protected, or
00H if it is unprotected. Refer to Table 1 for valid sector
addresses.
Auto-select Command
The auto-select command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements. This
method is an alternative to that shown in Table 3, which
The system must write the reset command to exit the
auto-select mode and return to reading array data.
is intended for PROM programmers and requires V
on address bit A9.
ID
7.3 Write Operation Status
The device provides several bits to determine the
status of a write operation: DQ7, DQ6, DQ5, DQ3,
DQ2, and. Table 6 and the following subsections
describe the functions of these bits. DQ7, and DQ6
each offer a method for determining whether a
program or erase operation is complete or in
progress.
Table 6. Write Operation Status
DQ7
(Note1)
DQ5
Status
DQ6
DQ3
DQ2
(Note2)
No
Embedded Program Algorithm
Embedded Erase Algorithm
Toggle
Toggle
0
0
0
N/A
1
DQ7
0
Toggle
Toggle
Reading Erase Suspended
No
In Progress
1
N/A
Toggle
Sector
Toggle
Reading Non-Erase
Erase Suspended Mode
Data
DQ7
DQ7
Data
Data
Data
N/A
N/A
Data
N/A
Suspended Sector
Erase Suspend Program
Toggle
Toggle
0
1
No
Embedded Program Algorithm
Toggle
Exceeded
Embedded Erase Algorithm
Erase Suspend Program
0
Toggle
Toggle
1
1
1
Toggle
Time Limits
N/A
N/A
DQ7
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection
for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the
maximum timing limits. See “DQ5: Exceeded Timing Limits” for more information.
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F49L040A
DQ7: Data Polling
DQ6:Toggle BIT I
The DQ7 indicates to the host system whether an
Embedded Algorithm is in progress or completed, or
whether the device is in Erase Suspend mode. The
Data Polling is valid after the rising edge of the final
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
pulse in the program or erase command
valid after the rising edge of the final
pulse in the
WE
WE
sequence.
command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum
programmed
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
to DQ7. This DQ7 status also applies to programming
during Erase Suspend. When the Embedded Program
algorithm is complete, the device outputs the true data
on DQ7. The system must provide the program address
to read valid status information on DQ7. If a program
address falls within a protected sector, Data Polling on
DQ7 is active for approximately 1 µs, then the device
returns to reading array data.
cause DQ6 to toggle. The system may use either
OE
or
to control the read cycles. When the operation
CE
is complete, DQ6 stops toggling.
When an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6
toggles for approximately 100 µs, then returns to
reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
During the Embedded Erase algorithm, Data Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status
information on DQ7.
The system can use DQ6 and DQ2 together to
determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(i.e. the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which sectors
are erasing or erase-suspended. Alternatively, the
system can use DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data Polling
on DQ7 is active for approximately 100 µs, then the
device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the
selected sectors that are protected.
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7~
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete. Table 6 shows the
outputs for Toggle Bit I on DQ6. Figure 18 shows the
toggle bit algorithm. Figure 20 shows the toggle bit
timing diagrams. Figure 21 shows the differences
between DQ2 and DQ6 in graphical form. Refer to the
subsection on DQ2: Toggle Bit II.
Output Enable (
) is asserted low. Refer to Figure
OE
19, Data Polling Timings (During Embedded
Algorithms), Figure 17 shows the Data Polling
algorithm.
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EFST
F49L040A
DQ2: Toggle Bit II
DQ5: Exceeded Timing Limits
The “Toggle Bit II” on DQ2, when used with DQ6,
indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II
DQ5 indicates whether the program or erase time has
exceeded the specified limits(internal pulse count).
Under these conditions DQ5 will produce a "1". This
time-out condition indicates that the program or erase
cycle was not successfully completed. Data Polling and
Toggle Bit are the only operating functions of the
device under this condition.
is valid after the rising edge of the final WE or CE ,
whichever happens first, in the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for
If this time-out condition occurs during sector erase
operation, it specifies that a particular sector is bad and
it may not be reused. However, other sectors are still
functional and may be used for the program or erase
operation. The device must be reset to use other
sectors. Write the Reset command sequence to the
device, and then execute program or erase command
sequence. This allows the system to continue to use
the other active sectors in the device.
erasure. (The system may use either
or
to
CE
OE
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is
erase-suspended.
DQ6, by comparison, indicates whether the device is
actively erasing, or whether is in erase-suspended, but
cannot distinguish which sectors are selected for
erasure. Thus, both status bits are required for sector
and mode information. Refer to Table 6 to compare
outputs for DQ2 and DQ6.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or
combination
Figure 18 shows the toggle bit algorithm in flowchart
form. See also the DQ6: Toggle Bit I subsection. Figure
20 shows the toggle bit timing diagram. Figure 21
shows the differences between DQ2 and DQ6 in
graphical form.
of sectors are bad.
If this time-out condition occurs during the
programming operation, it specifies that the sector
containing that byte is bad and this sector may not be
reused, however other sectors are still functional and
can be reused.
Reading Toggle Bits DQ6/ DQ2
Refer to Figure 18 for the following discussion.
Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on DQ7–DQ0 on the following read
cycle.
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
DQ3:Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If
additional sectors are selected for erasure, the entire
timeout also applies after each additional sector erase
command.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
must write the reset command to return to reading
array data.
When the time-out is complete, DQ3 switches from “0”
to “1.” If the time between additional sector erase
commands from the system can be assumed to be less
than 50 µs, the system need not monitor DQ3.
When the sector erase command sequence is written,
the system should read the status on DQ7 (Data
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (except Erase Suspend)
are ignored until the erase operation is complete.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described earlier.
Alternatively, it may choose to perform other system
tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been
accepted. Table 6 shows the outputs for DQ3.
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EFST
F49L040A
7.4 More Device Operations
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against
inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or
programming, which might otherwise be caused by spurious system level signals during V
transitions, or from system noise.
power-up and power-down
CC
Low VCC Write Inhibit
When V
is less than VLKO, the device does not accept any write cycles. This protects data during V
power-up and
CC
CC
power-down. The command register and all internal program/erase circuits are disabled, and the device resets.
Subsequent writes are ignored until V is greater than V . The system must provide the proper signals to the control
CC
LKO
pins to prevent unintentional writes when V
is greater than V
.
CC
LKO
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on
,
or
do not initiate a write cycle.
WE
OE CE
Logical Inhibit
Write cycles are inhibited by holding any one of
= V ,
= V or
= V . To initiate a write cycle,
and
CE
WE
OE
is a logical one.
CE
IL
IH
IH
must be a logical zero while
WE
OE
Power Supply Decoupling
In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between
its V and GND.
CC
Power-Up Sequence
The device powers up in the Read Mode. In addition, the memory contents may only be altered after successful
completion of the predefined command sequences.
Power-Up Write Inhibit
If
=
= V and
= V during power up, the device does not accept commands on the rising edge of
OE
.
WE
WE
CE
IL
IH
The internal state machine is automatically reset to reading array data on power-up.
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F49L040A
8. ABSOLUTE MAXIMUM RATINGS
Storage Temperature
2. Minimum DC input voltage on pins A9 and
OE
Plastic Packages . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
is -0.5 V. During voltage transitions, A9 and
may overshoot V to –2.0 V for periods
OE
SS
with Power Applied. . . . . . . .. . . . . . –65°C to +125°C
Voltage with Respect to Ground
of up to 20 ns. See Figure 1. Maximum DC
input voltage on pin A9 is +12.5 V which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to
ground at a time. Duration of the short circuit
should not be greater than one second.
V
CC (Note 1) . . . . . . . . . . .–0.5 V to +4.0 V
A9 and
(Note 2) …. . . .. . . . . –0.5 V to +12.5 V
OE
All other pins (Note 1). . . . . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) .. . .. 200 mA
Notes:
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is
1. Minimum DC voltage on input or I/O pins
is –0.5 V. During voltage transitions, input or
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device
reliability.
I/O pins may overshoot V to
SS
–2.0 V for periods of up to 20 ns. See Figure 1.
Maximum DC voltage on input or I/O pins is
V
CC
+0.5 V. During voltage transitions, input or
I/O pins may overshoot to V
+2.0 V for
CC
periods up to 20 ns. See Figure 2.
Figure 1. Maximum Negative Overshoot Waveform
20ns
20ns
+0 . 8 V
- 0. 5V
- 2. 0V
20ns
Figure 2. Maximum Positive Overshoot Waveform
20ns
Vc c
+ 2 . 0 V
Vc c
+ 0 . 5 V
2. 0V
20ns
20ns
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OPERATING RANGES
F49L040A
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . . 3.0 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Table 7. Capacitance TA = 25°C , f = 1.0 MHz
Symbol
CIN1
Description
Conditions
VIN = 0V
Min.
Typ.
Max.
8
Unit
pF
Input Capacitance
CIN2
Control Pin
VIN = 0V
12
pF
Capacitance
COUT
Output Capacitance
VOUT = 0V
12
pF
9. DC CHARACTERISTICS
Table 8. DC Characteristics TA = 0C to 70C, VCC = 3.0V to 3.6V
Symbol
ILI
Description
Conditions
Min.
Typ.
Max.
±1
35
Unit
uA
Input Leakage Current
A9 Input Leakage Current
Output Leakage Current
VIN = VSS or VCC, VCC = VCC max.
VCC = VCC max; A9=12.5V
ILIT
uA
ILO
VOUT = VSS or VCC, VCC = VCC max
±1
25
uA
@5MHz
@1MHz
7
2
mA
mA
mA
uA
= VIL,
= VIH
CE
OE
ICC1
VCC Active Read Current
5
ICC2
ICC3
VCC Active write Current
VCC Standby Current
= VIL,
= VIH
OE
15
25
30
CE
= VCC ± 0.3V
100
CE
CE
V
CC Standby Current
= VCC ± 0.3V
ICC4
25
25
100
uA
During Reset
ICC5
VIL
Automatic sleep mode
Input Low Voltage(Note 1)
Input High Voltage
VIH = VCC ± 0.3V; VIL = VSS ± 0.3V
100
0.8
uA
V
-0.5
VIH
0.7x VCC
VCC + 0.3
V
Voltage for Auto-Select
and Temporary Sector
Unprotect
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage
VID
VCC =3.3V
11.5
12.5
0.45
V
V
VOL
VOH1
VOH2
VLKO
IOL = 4.0mA, VCC = VCC min
IOH = -2mA, VCC = VCC min
IOH = -100uA, VCC min
0.7x VCC
VCC -0.4
2.3
Low VCC Lock-out Voltage
2.5
V
Notes :
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for 250 ns
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EFST
F49L040A
10. AC CHARACTERISTICS
TEST CONDITIONS
Figure 3. Test Setup
2.7K
Ω
DEVICE UNDER
TEST
+3.3V
DIODES = IN3064
OR EQUIVALENT
CL
6.2KΩ
CL = 100pF Including jig capacitance
CL = 30pF for F49L040A
Figure 4. Input Waveforms and Measurement Levels
3. 0V
0V
1. 5V
1. 5V
Test Poin t s
Inpu t
Out pu t
A C TE S TIN G
:
In p u t s a r e d r i v e n a t 3 . 0 V f o r
5 n s .
a
l o g i c " 1 " a n d 0 V f o r
a
l o g i c " 0 "
In p ut p ul s e r i s e a nd f a l l ti m e s a re
<
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10.1 Read Operation
F49L040A
TA = 0C to 70C, VCC = 3.0V~3.6V
Table 9. Read Operations
-70
-90
Symbol
Description
Conditions
Unit
Min.
Max.
Min.
Max.
tRC
Read Cycle Time (Note 1)
Address to Output Delay
70
90
ns
ns
tACC
=
= VIL
70
70
30
90
90
35
CE OE
to Output Delay
CE
tCE
tOE
= VIL
ns
ns
OE
CE
= VIL
= VIL
to Output Delay
OE
High to Output Float
(Note1)
OE
tDF
25
30
ns
ns
ns
ns
CE
tOEH
Output Enable
Read
0
10
0
0
10
0
Toggle and
Data Polling
Hold Time
=
= VIL
tOH
Address to Output hold
CE OE
Notes :
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer
driven.
Figure 5. Read Timing Waveform
tR C
Addresses Stabl e
tAC C
Addr es s
C E
tD F
t O E
OE
tO E H
W E
tC E
tO H
H i gh - Z
H i gh - Z
Output Vali d
Outputs
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10.2 Program/Erase Operation
Table 10.
Controlled Program/Erase Operations(TA = 0C to 70C, VCC = 3.0V~3.6V)
WE
-70
-90
Symbol
Description
Unit
Min.
70
Max.
Min.
90
Max.
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
ns
ns
ns
ns
ns
ns
t
WC
0
45
35
0
0
45
35
0
t
AS
AH
DS
DH
t
t
Data Hold Time
t
Output Enable Setup Time
Read Recovery Time Before
0
0
t
OES
0
0
ns
t
GHWL
Write (
High to
low)
WE
OE
Setup Time
Hold Time
0
0
0
0
ns
ns
ns
ns
CE
CE
t
CS
t
CH
Write Pulse Width
Write Pulse Width High
35
30
35
30
t
WP
t
WPH
Programming Operation (Note 2)
(Byte program time)
9(typ.)
9(typ.)
us
t
t
WHWH1
WHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
50
0.7(typ.)
50
sec
us
t
V
CC
Setup Time (Note 1)
VCS
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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F49L040A
Table 11.
Controlled Program/Erase Operations(TA = 0C to 70C, VCC = 3.0V~3.6V)
CE
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
70
90
ns
t
WC
0
45
35
0
0
45
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
t
AS
AH
DS
DH
t
t
Data Hold Time
t
Output Enable Setup Time
0
0
t
OES
Read Recovery Time Before Write
0
0
t
GHEL
0
0
Setup Time
Hold Time
t
WE
WE
CE
WS
0
0
t
WH
Pulse Width
35
30
35
30
t
CP
Pulse Width High
CE
t
CPH
Programming Operation(note2)
Sector Erase Operation (note2)
9(typ.)
9(typ.)
t
t
WHWH1
WHWH2
0.7(typ.)
0.7(typ.)
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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F49L040A
Figure 6. Write Command Timing Waveform
V C C
3V
V I H
V I L
Addr es s
AD D V al i d
tA H
t A S
V I H
V I L
W E
t O E S
t W P
tW P H
tC W C
tC H
V I H
V I L
C E
OE
tC S
V I H
V I L
tD S
tD H
V I H
V I L
D I N
Dat a
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F49L040A
Figure 7. Embedded Programming Timing Waveform
Read S ta t us D at a ( la st t w o cycl e )
Pr ogr am C om m an d S equ en ce ( l as t t wo cycl e)
t A S
tW C
PA
PA
555h
PA
Addr es s
C E
tA H
tC H
tG H W L
OE
tW H W H 1
t W P
W E
tW P H
tC S
tD S
tD H
A0h
P D
Status
D O U T
Dat a
V C C
tV C S
Notes :
1. PA = Program Address, PD = Program Data, DOUT is the true data the program address.
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F49L040A
Figure 8. Embedded Programming Algorithm Flowchart
Start
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write DATA PD address PA
Increment
address
Data Poll
from system
No
No
Verify Work OK?
Yes
Last address?
Yes
Embedded Program Completed
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Figure 9. CE Controlled Program Timing Waveform
5 5 5 f o r p r o g r a mP A f o r p r o g r a m
2 A A f o r e r a s e S A f o r s e c t o r e r a s e
5 5 5 f o r c h i p
e r a sDe ata P ol li n g
PA
Addr es s
tW C
tW H
t A S
tA H
W E
tG H E L
OE
tC P
tW H W H 1 o r
2
C E
tC P H
tD H
t W S
tB U S Y
tD S
Dat a
D O U T
DQ7
P D f o r p r o g r a m
A0 f o r p r o g r a m
5 5 f o r e r a s e
3 0 f o r s e c t o r e r a s e
1 0 f o r c h i p e r a s e
Notes :
1. PA = Program Address, PD = Program Data, DOUT = Data Out , DQ7 = complement of data written to device
2. Figure indicates the last two bus cycles of the command sequence.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 24/41
EFST
F49L040A
Figure 10. Embedded Chip Erase Timing Waveform
Read Statu s Dat a
Er as e Com mand S equ en ce( last t w o cycl e)
t A S
tW C
2AAh
VA
VA
Addr es s
C E
555h
tA H
tC H
tG H W L
OE
tW H W H 2
t W P
W E
tW P H
tC S
tD S
tD H
I n
P r o g r e s s
C o m p l e t e
10h
55h
Dat a
tV C S
V C C
Notes :
SA = Sector Address (for Sector Erase, VA = Valid Address for reading status data
(see "Write Operation Status")
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 25/41
EFST
F49L040A
Figure 11. Embedded Chip Erase Algorithm Flowchart
Start
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Poll from System
No
Data = FFh?
Yes
Embedded Chip Erease Completed
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
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EFST
F49L040A
Figure 12. Embedded Sector Erase Timing Waveform
Read Statu s Dat a
Er as e Com mand S equ en ce( last t w o cycl e)
t A S
tW C
VA
2AAh
SA
VA
Addr es s
C E
tA H
tC H
tG H W L
OE
tW H W H 2
t W P
W E
tW P H
tC S
tD H
tD S
I n
P r o g r e s s
30h
C o m p l e t e
55h
Dat a
tV C S
V C C
Notes :
SA = Sector Address (for Sector Erase, VA = Valid Address for reading status data
(see "Write Operation Status")
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 27/41
EFST
F49L040A
Figure 13. Embedded Sector Erase Algorithm Flowchart
Start
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Address SA
No
Last Sector
to Erase
Yes
Data Poll from System
No
Data = FFh?
Embedded Sector Erease Completed
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
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EFST
F49L040A
Figure 14. Erase Suspend/Erase Resume Flowchart
Start
Write Data B0H
ERASE SUSPEND
No
Toggle Bit checking Q6
not toggled
Yes
Read Array or
Program
No
Reading or
Programming End
Yes
Write Data 30H
ERASE RESUME
Continue Erase
No
Another
Erase Suspend?
Yes
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
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EFST
F49L040A
Figure 15. Sector Protect Timing Waveform (A9,
Control)
OE
A0,A1
A6
12V
3V
A9
t V L H T
12V
3V
Ver i f y
OE
t V L H T
t V L H T
tW P P 1
W E
C E
t O E S P
01H
F 0 H
Dat a
t O E
Sec tor Addr es s
A18~A12
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 30/41
EFST
F49L040A
Figure 16. Sector Protection Algorithm (A9,
Control)
OE
Start
Set up sector address
PLSCNT = 1
OE = VID, A9 = VID, CE = VIL
A6 = VIL
Activate WE Pluse
Time out 150us
Set WE = VIH , CE = OE = VIL
A9 should remain VID
Read from Sector
Address = SA, A0 = 1, A1 = 1
No
No
Data = 01H?
PLSCNT = 32?
Yes
Device Failed
Yes
Protect Another
Sector?
Remove VID from A9
Write reset command
Sector Protection
Complete
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 31/41
EFST
F49L040A
WRITE OPERATION STATUS
Figure 17. Data Polling Algorithm
Start
Read DQ7~DQ0
Add. = VA(1)
Yes
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7~DQ0
Add. = VA
Yes
DQ7 = Data?
(2)
No
Pass
FAIL
Notes :
1. VA =Valid address for programming.
2. DQ7 should be re-checked even DQ5 = "1" because
DQ7 may change simultaneously with DQ5.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
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EFST
F49L040A
Figure 18. Toggle Bit Algorithm
Start
Read DQ7 ~ DQ0
(Note 1)
Read DQ7 ~ DQ0
No
Toggle Bit = DQ6
Toggle?
Yes
No
DQ5 = 1?
Yes
Read DQ7~DQ0 Twice
(Note 1,2)
No
Toggle bit DQ6
=
Toggle?
Yes
Program / Erase operation
Not complete, write
reset command
Program / Erase
operation complete
Note :
1. Read toggle bit twice to determine whether or not it is toggle.
2. Recheck toggle bit because it may stop toggling as DQ5 change to "1".
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
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EFST
F49L040A
Figure 19. Data Polling Timings (During Embedded Algorithms)
tR C
VA
Addr es s
VA
tA C C
tC E
C E
tC H
t O E
OE
tO E H
tD F
W E
tO H
H i gh - Z
C o m p l e m e n t
V a i l d D a t a
C o m p l e m e n t
S t a t u s D a t a
T r u e
T r u e
DQ7
H i gh - Z
S t a t u s D a t a
Va i l d D a t a
DQ 0~ DQ 6
Notes :
VA = Valid Address. Figure shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 34/41
EFST
F49L040A
Figure 20. Toggle Bit Timing Waveforms (During Embedded Algorithms)
tR C
VA
VA
Addr es s
VA
VA
tAC C
tC E
C E
tC H
t O E
OE
tO E H
tD F
tO H
W E
H i gh - Z
V
a
i
l d
S t a t u s
V a i l d
S t a t u s
V a i l d
D a t a
V a i l d
D a t a
DQ6/DQ 2
( s e c o n d r e a d )
( f i r s t r e a d )
( s t o p s t o g g l i n g )
Notes :
VA = Valid Address; not required for DQ6. Figure shows first status cycle after command sequence, last status
read cycle, and array data read cycle.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 35/41
EFST
F49L040A
Figure 21. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter E r as e
Suspend Progra m
En ter E m bedde d
Er as in g
Er as e
Suspen d
Er as e
Resu m e
W E
DQ6
DQ2
Er as e
Er as e
Er as e
Suspend
Read
Er as e
Su spend
Pr ogr am
Co m pl e t e
Notes :
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an
erase-suspended.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 36/41
EFST
F49L040A
Figure 22. ID Code Read Timing Waveform
V C C
3V
V I D
V I H
V I L
A D D
A9
V I H
A D D
A0
V I L
tAC C
tAC C
V I H
V I L
A1
A D D
A2~A8
A10~A18
V I H
V I L
V I H
V I L
C E
tC E
V I H
V I L
W E
t O E
V I H
V I L
OE
tD F
tO H
tO H
V I H
V I L
Dat a
DQ 0~ DQ 7
Data Out
7F H /8 C H
Data Out
4F H
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0
37/41
EFST
11. ERASE AND PROGRAMMING PERFORMANCE
F49L040A
Table 12. Erase And Programming Performance (Note.1)
Limits
Typ.(2)
0.7
Parameter
Unit
Min.
Max.(3)
Sector Erase Time
Chip Erase Time
15
50
sec
sec
11
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
9
300
13.5
us
4.5
sec
10,000
Cycles
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 25°C, 3.0V.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 38/41
EFST
F49L040A
12. PACKAGE DIMENSION
1. 32-LEAD
PLCC
D
1
D
c
1
32
30
4
5
29
2
E
E
3
E
E1
E
2
13
21
14
20
A
1
-C-
A
2
A
Seating Plane
0.020" MIN
-C-
b
b
O
e
2
D
3
0.004
D
2
D
2
Symbol
Dimension in mm
Norm
Dimension in inch
Norm
Min
3.18
1.53
Max
3.55
2.41
Min
0.125
0.060
Max
0.140
0.095
A
A 1
A 2
b
b2
c
-------
-------
2.79 REF
-------
-------
-------
0.110 REF
-------
0.33
0.66
0.20
0.54
0.82
0.36
0.013
0.026
0.008
0.021
0.032
0.014
-------
-------
-------
-------
e
θ
1.27 BSC
-------
0.050 BSC
-------
0O
14.86
13.90
6.05
10O
15.11
14.04
6.93
0O
0.585
0.547
0.238
10O
0.595
0.553
0.273
E
14.99
13.97
-------
0.590
0.550
-------
E 1
E 2
E 3
D
D 1
D 2
D 3
10.16 BSC
12.45
11.43
-------
7.62 BSC
0.400 BSC
0.490
0.450
-------
0.300 BSC
12.32
11.36
4.78
12.57
11.50
5.66
0.485
0.447
0.188
0.495
0.453
0.223
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
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EFST
F49L040A
2. 32-LEAD
TSOP(I) ( 8x14 mm )
Dimension in mm
Min Norm Max
------- ------- 1.20 ------- ------- 0.047
0.05 ------- 0.15 0.006 ------- 0.002
Dimension in inch
Min Norm Max
Dimension in mm
Min Norm Max
14.00 BSC
Dimension in inch
Min Norm Max
0.551 BSC
Symbol
Symbol
A
A 1
A 2
b
D
D 1
E
e
L
12.40 BSC
0.488 BSC
0.95 1.00
0.17 0.22
1.05 0.037 0.039 0.041
0.27 0.007 0.009 0.011
8.00 BSC
0.50 BSC
0.315 BSC
0.020 BSC
c
0.10 ------- 0.21 0.004 ------- 0.008
0.50 0.60
0.70 0.020 0.024 0.028
θ
0O
-------
5O
0O
-------
5O
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 40/41
EFST
F49L040A
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form
or by any means without the prior permission of EFST.
The contents contained in this document are believed to be accurate at
the time of publication. EFST assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
assumed by EFST for any infringement of patents, copyrights, or other
intellectual property rights of third parties which may result from its use.
No license, either express , implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of EFST or
others.
Any semiconductor devices may have inherently a certain rate of
failure. To minimize risks associated with customer's application,
adequate design and operating safeguards against injury, damage, or
loss from such failure, should be provided by the customer when
making application designs.
EFST 's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Flash Storage Technology Inc.
Publication Date : Apr. 2005
Revision: 1.0 41/41
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