EN25S80-75WIP [EON]
8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector; 8兆位1.8V串行闪存与4K字节扇区制服
| 型号： | EN25S80-75WIP |
| 厂家： | 
EON SILICON SOLUTION INC. |
| 描述： | 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector |
| 文件： | 总37页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EN25S80
EN25S80
8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 1.65-1.95 volt
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 500ms typical
- Chip erase time: 5 Seconds typical
• 8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• Standard or Dual SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• High performance
- 75MHz clock rate for one data bit
• Package Options
- 50MHz clock rate for two data bits
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
• Low power consumption
- 7 mA typical active current
- 1 μA typical power down current
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
• Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be erased individually
GENERAL DESCRIPTION
The EN25S80 is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S80 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI)
and DQ1(DO). SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of
100MHz for Dual Output when using the Dual Output Fast Read instructions. The memory can be
programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S80 also offers a sophisticated method for protecting individual blocks against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect
blocks, a system can unprotect a specific block to modify its contents while keeping the remaining
blocks of the memory array securely protected. This is useful in applications where program code is
patched or updated on a subroutine or module basis, or in applications where data storage segments
need to be modified without running the risk of errant modifications to the program code segments.
The EN25S80 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S80 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
1
Rev. D, Issue Date: 2009/05/15
EN25S80
Figure.1 CONNECTION DIAGRAMS
CS#
VCC
1
2
3
4
8
7
6
5
DO(DQ1)
WP#
HOLD#
CLK
VSS
DI (DQ0)
8 - LEAD SOP
CS#
VCC
1
8
DO(DQ1)
WP#
HOLD#
CLK
2
3
4
7
6
5
DI (DQ0)
VSS
8 - LEAD VDFN
Table 1. Pin Names
Symbol
CLK
Pin Name
Serial Clock Input
*1
DI (DQ0)
DO (DQ1)
CS#
Serial Data Input (Data Input Output 0)
Serial Data Output (Data Input Output 1)
Chip Enable
*1
Write Protect
WP#
Hold Input
HOLD#
Vcc
Supply Voltage (1.65-1.95V)
Ground
Vss
No Connect
NC
Note:
*1. DQ0 and DQ1 are used for Dual instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
2
Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 2. BLOCK DIAGRAM
Note:
1. DQ0 and DQ1 are used for Dual instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
3
Rev. D, Issue Date: 2009/05/15
EN25S80
SIGNAL DESCRIPTION
Serial Data Input, Output and IOs (DI, DO and DQ0, DQ1)
The EN25S80 support standard SPI and Dual SPI operation. Standard SPI instructions use the
unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge CLK.
Dual SPI instruction use the bidirectional IO pins to serially write instruction, addresses or data to the
device on the rising edge of CLK and read data or status from the device on the falling edge of CLK.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is
deselected and the Serial Data Output (DO, or DQ0 and DQ1) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program
or status register cycle is in progress. When CS# is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the
device. After power-up, CS# must transition from high to low before a new instruction will be accepted.
HOLD (HOLD#)
The HOLD# pin allows the device to be paused while it is actively selected. When HOLD# is brought
low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be
ignored (don’t care). The HOLD# function can be useful when multiple devices are sharing the same
SPI signals.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
4
Rev. D, Issue Date: 2009/05/15
EN25S80
MEMORY ORGANIZATION
The memory is organized as:
z
z
1,048,576 bytes
Uniform Sector Architecture
16 blocks of 64-Kbyte
256 sectors of 4-Kbyte
4096 pages (256 bytes each)
z
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Sector
Address range
Block
255
0FF000h
0FFFFFh
15
240
239
0F0000h
0EF000h
0F0FFFh
0EFFFFh
14
13
12
11
10
9
224
223
0E0000h
0DF000h
0E0FFFh
0DFFFFh
208
207
0D0000h
0CF000h
0D0FFFh
0CFFFFh
192
191
0C0000h
0BF000h
0C0FFFh
0BFFFFh
176
175
0B0000h
0AF000h
0B0FFFh
0AFFFFh
160
159
0A0000h
09F000h
0A0FFFh
09FFFFh
144
143
090000h
08F000h
090FFFh
08FFFFh
8
128
127
080000h
07F000h
080FFFh
07FFFFh
7
112
111
070000h
06F000h
070FFFh
06FFFFh
6
96
95
060000h
05F000h
060FFFh
05FFFFh
5
80
79
050000h
04F000h
050FFFh
04FFFFh
4
64
63
040000h
03F000h
040FFFh
03FFFFh
3
48
47
030000h
02F000h
030FFFh
02FFFFh
2
32
31
020000h
01F000h
020FFFh
01FFFFh
1
16
15
010000h
00F000h
010FFFh
00FFFFh
4
3
2
1
0
004000h
003000h
002000h
001000h
000000h
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
5
Rev. D, Issue Date: 2009/05/15
EN25S80
OPERATING FEATURES
Standard SPI Modes
The EN25S80 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation Modes 0
(0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as shown in
Figure 3, concerns the normal state of the CLK signal when the SPI bus master is in standby and data
is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For Mode 3 the
CLK signal is normally high. In either case data input on the DI pin is sampled on the rising edge of the
CLK. Data output on the DO pin is clocked out on the falling edge of CLK.
Figure 3. SPI Modes
Dual SPI Instruction
The EN25S80 supports Dual SPI operation when using the “ Dual Output Fast Read and Dual I/ O
FAST_READ “ (3Bh and BBh) instructions. These instructions allow data to be transferred to or from
the Serial Flash memory at two to three times the rate possible with the standard SPI. The Dual Read
instructions are ideal for quickly downloading code from Flash to RAM upon power-up (code-shadowing)
or for application that cache code-segments to RAM for execution. The Dual output feature simply
allows the SPI input pin to also serve as an output during this instruction. When using Dual SPI
instructions the DI and DO pins become bidirectional I/O pins; DQ0 and DQ1. All other operations use
the standard SPI interface with single output signal.
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and
a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal
Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed
at a time (changing bits from 1 to 0) provided that they lie in consecutive addresses on the same page
of memory.
Sector Erase, Block Erase and Chip Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a time,
using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE) instruction or
throughout the entire memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle
(of duration tSE tBE or tCE). The Erase instruction must be preceded by a Write Enable (WREN)
instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE or
CE ) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE or tCE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
6
Rev. D, Issue Date: 2009/05/15
EN25S80
Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip
Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal
cycles have completed (Program, Erase, Write Status Register). The device then goes into the Stand-
by Power mode. The device consumption drops to ICC1
.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains
in this mode until another specific instruction (the Release from Deep Power-down Mode and Read
Device ID (RDI) instruction) is executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used
as an extra software protection mechanism, when the device is not in active use, to protect the device
from inadvertent Write, Program or Erase instructions.
Status Register. The Status Register contains a number of status and control bits that can be read or
set (as appropriate) by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of
the area to be software protected against Program and Erase instructions.
SRP bit / OTP_LOCK bit The Status Register Protect (SRP) bit operates in conjunction with the Write
Protect (WP#) signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the
device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status
Register (SRP, BP2, BP1, BP0) become read-only bits.
In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK value is equal 0, after OTP_LOCK is programmed with 1 by WRSR command,
the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only be
programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before entering OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the EN25S80
provides the following data protection mechanisms:
z
Power-On Reset and an internal timer (t ) can provide protection against inadvertent changes
PUW
while the power supply is outside the operating specification.
z
z
Program, Erase and Write Status Register instructions are checked that they consist of a number
of clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set
the Write Enable Latch (WEL) bit . This bit is returned to its reset state by the following events:
– Power-up
–
Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction
completion or Page Program (PP) instruction completion or Sector Erase (SE) instruction
completion or Block Erase (BE) instruction completion or Chip Erase (CE) instruction
completion
z
z
The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as read-only.
This is the Software Protected Mode (SPM).
The Write Protect (WP#) signal allows the Block Protect (BP2, BP1, BP0) bits and Status Register
Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
7
Rev. D, Issue Date: 2009/05/15
EN25S80
z
In addition to the low power consumption feature, the Deep Power-down mode offers extra
software protection from inadvertent Write, Program and Erase instructions, as all instructions are
ignored except one particular instruction (the Release from Deep Power-down instruction).
Table 3. Protected Area Sizes Sector Organization
Status Register
Content
Memory Content
Addresses Density(KB)
None None
BP2
Bit
0
BP1
Bit
0
BP0
Bit
0
Portion
None
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
All
Protect Blocks
None
15
14 to 15
12 to 15
8 to 15
All
0
0
0
1
1
1
1
0
1
0F0000h-0FFFFFh
0E0000h-0FFFFFh
0C0000h-0FFFFFh
080000h-0FFFFFh
000000h-0FFFFFh
000000h-0FFFFFh
000000h-0FFFFFh
64KB
1
0
128KB
256KB
512KB
1024KB
1024KB
1024KB
1
1
0
0
0
1
1
0
All
All
All
All
1
1
Hold Function
The Hold (HOLD#) signal is used to pause any serial communications with the device without resetting
the clocking sequence. However, taking this signal Low does not terminate any Write Status Register,
Program or Erase cycle that is currently in progress.
To enter the Hold condition, the device must be selected, with Chip Select (CS#) Low. The Hold
condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with Serial
Clock (CLK) being Low (as shown in Figure 4.).
The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides
with Serial Clock (CLK) being Low.
If the falling edge does not coincide with Serial Clock (CLK) being Low, the Hold condition starts after
Serial Clock (CLK) next goes Low. Similarly, if the rising edge does not coincide with Serial Clock (CLK)
being Low, the Hold condition ends after Serial Clock (CLK) next goes Low. (This is shown in Figure 4.).
During the Hold condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI)
and Serial Clock (CLK) are Don’t Care.
Normally, the device is kept selected, with Chip Select (CS#) driven Low, for the whole duration of the
Hold condition. This is to ensure that the state of the internal logic remains unchanged from the mo-
ment of entering the Hold condition.
If Chip Select (CS#) goes High while the device is in the Hold condition, this has the effect of resetting
the internal logic of the device. To restart communication with the device, it is necessary to drive Hold
(HOLD#) High, and then to drive Chip Select (CS#) Low. This prevents the device from going back to
the Hold condition.
Figure 4. Hold Condition Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
8
Rev. D, Issue Date: 2009/05/15
EN25S80
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is
driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has
been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed
(Fast_Read), Read Status Register (RDSR) or Release from Deep Power-down, and Read Device ID
(RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select
(CS#) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write
Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction
is rejected, and is not executed. That is, Chip Select (CS#) must driven High when the number of clock
pulses after Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at
any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1
data byte), it will be ignored too. In the case of SE and BE, exact 24-bit address is a must, any
less or more will cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
9
Rev. D, Issue Date: 2009/05/15
EN25S80
Table 4A. Instruction Set
Instruction Name
Byte 1
Code
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
Write Enable
06h
04h
Write Disable / Exit
OTP mode
Read Status
Register
(3)
05h
(S7-S0)
S7-S0
(4)
continuous
Write Status
Register
01h
02h
20h
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
D7-D0
Next byte continuous
Page Program
Sector Erase / OTP
erase
Block Erase
D8h
Chip Erase
C7h/ 60h
B9h
Deep Power-down
(5)
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
dummy
dummy
dummy
(ID7-ID0)
ABh
00h
01h
(M7-M0)
(ID7-ID0)
(ID7-ID0) (6)
(M7-M0)
Manufacturer/
Device ID
dummy
dummy
90h
(ID15-ID8)
(ID7-ID0) (7)
(M7-M0)
Read Identification
Enter OTP mode
9Fh
3Ah
Notes:
1. (BR7-BR0) : The output data of block protection register.
2. The Block Protection Registers contents will repeat continuously until CS# terminates the instruction.
3. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the
device on the DO pin.
4. The Status Register contents will repeat continuously until CS# terminate the instruction.
5. The Device ID will repeat continuously until CS# terminates the instruction.
6. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminates the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
7. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
10
Rev. D, Issue Date: 2009/05/15
EN25S80
Table 4B. Instruction Set (Read Instruction)
Instruction Name Byte 1 Byte 2
Code
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
Read Data
Fast Read
A23-A16
A23-A16
A15-A8
A15-A8
A7-A0
A7-A0
(D7-D0)
dummy
(Next byte)
(D7-D0)
continuous
03h
0Bh
(Next Byte)
continuous
(one byte
per 4 clocks,
continuous)
(one byte
Dual Output Fast
Read
(1)
A23-A16
A15-A8
A7-A0
dummy
3Bh
BBh
(D7-D0, …)
A7-A0,
dummy
(2)
(1)
(2)
Dual I/O Fast Read
per 4 clocks,
continuous)
A23-A8
(D7-D0, …)
Notes:
1. Dual Output data
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
2. Dual Input Address
DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1
Table 5. Manufacturer and Device Identification
OP Code
ABh
(M7-M0)
(ID15-ID0)
(ID7-ID0)
73h
90h
1Ch
1Ch
73h
9Fh
3814h
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
11
Rev. D, Issue Date: 2009/05/15
EN25S80
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase
(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
Figure 5. Write Enable Instruction Sequence Diagram
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.
Figure 6. Write Disable Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
12
Rev. D, Issue Date: 2009/05/15
EN25S80
Read Status Register (RDSR) (05h)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register
continuously, as shown in Figure 7.
Figure 7. Read Status Register Instruction Sequence Diagram
Table 6. Status Register Bit Locations
S7
OTP_LOCK
S6
S5
S4
S3
S2
S1
S0
SRP
Status Register
Protect
BP2
BP1
BP0
WEL
WIP
(Write In
Progress bit)
bit
(Block Protected (Block Protected (Block Protected (Write Enable
bits)
bits)
bits)
Latch)
(note 1)
Reserved Reserved
bits bits
1 = write
enable
0 = not write 0 = not in write
1 = write
operation
1 = status
register write
disable
1 = OTP
sector is
protected
(note 2)
(note 2)
(note 2)
enable
operation
Non-volatile bit
Non-volatile bit Non-volatile bit Non-volatile bit
volatile bit
volatile bit
Note
1. In OTP mode, SRP bit is served as OTP_LOCK bit.
2. See the table 3 “Protected Area Sizes Sector Organization”.
The status and control bits of the Status Register are as follows:
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is
reset and no Write Status Register, Program or Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of
the area to be software protected against Program and Erase instructions. These bits are written with
the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP2, BP1, BP0)
bits is set to 1, the relevant memory area (as defined in Table 3.) becomes protected against Page
Program (PP) Sector Erase (SE) and , Block Erase (BE), instructions. The Block Protect (BP2, BP1,
BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip Erase
(CE) instruction is executed if, and only if, all Block Protect (BP2, BP1, BP0) bits are 0.
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Rev. D, Issue Date: 2009/05/15
EN25S80
Reserved bit. Status register bit locations 5 and 6 are reserved for future use. Current devices will read
0 for these bit locations. It is recommended to mask out the reserved bit when testing the Status
Register. Doing this will ensure compatibility with future devices.
SRP bit / OTP_LOCK bit. The Status Register Protect (SRP) bit is operated in conjunction with the
Write Protect (WP#) signal. The Status Register Write Protect (SRP) bit and Write Protect (WP#) signal
allow the device to be put in the Hardware Protected mode (when the Status Register Protect (SRP) bit
is set to 1, and Write Protect (WP#) is driven Low). In this mode, the non-volatile bits of the Status
Register (SRP, BP2, BP1, BP0) become read-only bits and the Write Status Register (WRSR)
instruction is no longer accepted for execution.
In OTP mode, this bit is served as OTP_LOCK bit, user can read/program/erase OTP sector as normal
sector while OTP_LOCK value is equal 0, after OTP_LOCK is programmed with 1 by WRSR command,
the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only be
programmed once.
Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,
user must clear the protect bits before enter OTP mode and program the OTP code, then execute
WRSR command to lock the OTP sector before leaving OTP mode.
Write Status Register (WRSR) (01h)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write
Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (CS#) Low, followed by
the instruction code and the data byte on Serial Data Input (DI).
The instruction sequence is shown in Figure 8. The Write Status Register (WRSR) instruction has no
effect on S6, S5, S1 and S0 of the Status Register. S6 and S5 are always read as 0. Chip Select (CS#)
must be driven High after the eighth bit of the data byte has been latched in. If not, the Write Status
Register (WRSR) instruction is not executed. As soon as Chip Select (CS#) is driven High, the self-
timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register
cycle is in progress, the Status Register may still be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is
0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect
(BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in
Table 3. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status
Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register
Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected
Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware
Protected Mode (HPM) is entered.
NOTE : In the OTP mode, WRSR command will ignore input data and program OTP_LOCK bit to 1.
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Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 8. Write Status Register Instruction Sequence Diagram
Read Data Bytes (READ) (03h)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum frequency f , during the falling edge of
R
Serial Clock (CLK).
The instruction sequence is shown in Figure 9. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When
the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure9. Read Data Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Read Data Bytes at Higher Speed (FAST_READ) (0Bh)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory
contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a
maximum frequency F , during the falling edge of Serial Clock (CLK).
R
The instruction sequence is shown in Figure 10. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes
at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 10. Fast Read Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Dual Output Fast Read (3Bh)
The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that
data is output on two pins, DQ0 and DQ1, instead of just DQ0. This allows data to be transferred from
the EN25S80 at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is ideal
for quickly downloading code from to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the device’s
internal circuits additional time for setting up the initial address. The input data during the dummy clock
is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 11. Dual Output Fast Read Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Dual Input / Output FAST_READ (BBh)
The Dual I/O Fast Read (BBh) instruction allows for improved random access while maintaining two IO
pins, DQ0 and DQ1. It is similar to the Dual Output Fast Read (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
The Dual I/O Fast Read instruction enable double throughput of Serial Flash in read mode. The
address is latched on rising edge of CLK, and data of every two bits (interleave 2 I/O pins) shift out on
the falling edge of CLK at a maximum frequency. The first address can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single Dual I/O Fast Read instruction. The address counter rolls over to 0
when the highest address has been reached. Once writing Dual I/O Fast Read instruction, the following
address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in Figure 12.
Figure 12. Dual Input / Output Fast Read Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 13. If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data bytes are sent to device, they are correctly pro-
grammed at the requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is t
)
PP
is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
Figure 13. Page Program Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Sector Erase (SE) (20h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see
Table 2) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 14. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose du-
ration is t ) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
SE
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
Figure 14. Sector Erase Instruction Sequence Diagram
Block Erase (BE) (D8h)
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see
Table 2) is a valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low
for the entire duration of the sequence.
The instruction sequence is shown in Figure 15. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose du-
ration is t ) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to
BE
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
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Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 15. Block Erase Instruction Sequence Diagram
Chip Erase (CE) (C7h/60h)
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 16. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is t ) is
CE
initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
The Chip Erase (CE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The
Chip Erase (CE) instruction is ignored if one, or more blocks are protected.
Figure 16. Chip Erase Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Deep Power-down (DP) (B9h)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from ICC1 to ICC2, as specified in Table 9.)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from
this mode. The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the
Device ID of the device to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in
the Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 17.Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not
executed. As soon as Chip Select (CS#) is driven High, it requires a delay of t
before the supply
DP
current is reduced to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 17. Deep Power-down Instruction Sequence Diagram
Release from Deep Power-down and Read Device ID (RDI)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the
Release from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes
the device out of the Deep Power-down mode.
Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature
that is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for
reasons of backward compatibility, only, and should not be used for new designs. New designs should,
instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.
When used only to release the device from the power-down state, the instruction is issued by driving
the CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 18. After
This Data Sheet may be revised by subsequent versions
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Rev. D, Issue Date: 2009/05/15
EN25S80
the time duration of t
RES1
(See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the t
time duration.
RES1
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 19. The Device ID value for the EN25S80 are listed in Table 5. The Device ID can be read
continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device
was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is
immediate. If the device was previously in the Deep Power-down mode, though, the transition to the
Standby Power mode is delayed by t
, and Chip Select (CS#) must remain High for at least t
RES2 RES2
(max), as specified in Table 11. Once in the Stand-by Power mode, the device waits to be selected, so
that it can receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
Figure 18. Release Power-down Instruction Sequence Diagram
Figure 19. Release Power-down / Device ID Instruction Sequence Diagram
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Rev. D, Issue Date: 2009/05/15
EN25S80
Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device
ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device
ID instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in Figure 20. The Device ID values for the EN25S80 are listed in Table 5. If the 24-bit address is
initially set to 000001h the Device ID will be read first
Figure 20. Read Manufacturer / Device ID Diagram
Read Identification (RDID) (9Fh)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read,
followed by two bytes of device identification. The device identification indicates the memory type in the
first byte , and the memory capacity of the device in the second byte .
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction
should not be issued while the device is in Deep Power down mode.
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the
instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being
shifted out on Serial Data Output , each bit being shifted out during the falling edge of Serial Clock .
The instruction sequence is shown in Figure 21. The Read Identification (RDID) instruction is
terminated by driving Chip Select High at any time during data output.
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Rev. D, Issue Date: 2009/05/15
EN25S80
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
Figure 21. Read Identification (RDID)
Enter OTP Mode (3Ah)
This Flash has an extra 256 bytes OTP sector, user must issue ENTER OTP MODE command to read,
program or erase OTP sector. After entering OTP mode, the OTP sector is mapping to sector 255, SRP
bit becomes OTP_LOCK bit and can be read with RDSR command. Program / Erase command will be
disabled when OTP_LOCK bit is ‘1’
WRSR command will ignore the input data and program OTP_LOCK bit to 1.
User must clear the protect bits before enter OTP mode.
OTP sector can only be program and erase before OTP_LOCK bit is set to ‘1’ and BP [2:0] = ‘000’. In
OTP mode, user can read other sectors, but program/erase other sectors only allowed when
OTP_LOCK bit equal to ‘0’.
User can use WRDI (04h) command to exit OTP mode.
Erase OTP Command (20h)
User can use Sector Erase (20h) command only to erase OTP data.
Table 7. OTP Sector Address
Sector
255
Sector Size
256 byte
Address Range
0FF000h – 0FF0FFh
Note: The OTP sector is mapping to sector 255
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Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 22. Enter OTP Mode
Power-up Timing
Figure 23. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
10
Max.
Unit
µs
(1)
t
VCC(min) to CS# low
VSL
(1)
t
Time delay to Write instruction
1
10
ms
PUW
Note:
1.The parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
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Rev. D, Issue Date: 2009/05/15
EN25S80
Table 9. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 1.65-1.95V)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
Input Leakage Current
2
µA
LI
I
Output Leakage Current
Standby Current
2
5
5
µA
µA
µA
LO
I
CS# = V , V = V
CC IN
CS# = V , V = V
CC IN
or V
or V
at
CC1
SS
SS
CC
CC
I
Deep Power-down Current
CC2
CLK = 0.1 V
/ 0.9 V
CC
CC
14
11
mA
mA
75MHz, DQ = open
CLK = 0.1 V / 0.9 V
I
Operating Current (READ)
CC3
at
CC CC
30MHz, DQ = open
I
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
CS# = V
CC
CS# = V
CC
CS# = V
CC
CS# = V
CC
15
15
15
15
mA
mA
mA
mA
CC4
I
CC5
I
CC6
I
CC7
V
0.2 V
CC
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
– 0.5
V
V
V
V
IL
V
0.7V
V +0.4
CC
IH
CC
V
I
I
= 100 µA, Vcc=Vcc Min.
OL
0.3
OL
V
= –100 µA , Vcc=Vcc Min.
V
-0.2
OH
OH
CC
Table 10. AC Measurement Conditions
Symbol
Parameter
Min.
Max.
Unit
Load Capacitance
30
pF
ns
V
CL
Input Rise and Fall Times
5
Input Pulse Voltages
0.2VCC to 0.8VCC
0.3VCC to 0.7VCC
Input Timing Reference Voltages
Output Timing Reference Voltages
V
V
V
CC / 2
Figure 24. AC Measurement I/O Waveform
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Rev. D, Issue Date: 2009/05/15
EN25S80
Table 11. AC Characteristics
(Ta = - 40°C to 85°C; VCC = 1.65-1.95V)
Symbol
Alt
Parameter
Min
D.C.
Typ
Max
Unit
MHz
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, WRSR
75
FR
fC
Serial Clock Frequency for:
Dual Fast Read 、Dual I/O
50
33
MHz
D.C.
fR
Serial Clock Frequency for READ, RDSR, RDID
Serial Clock High Time
D.C.
6
MHz
ns
1
tCH
1
tCL
Serial Clock Low Time
6
ns
2
tCLCH
Serial Clock Rise Time (Slew Rate)
Serial Clock Fall Time (Slew Rate)
CS# Active Setup Time
0.1
0.1
5
V / ns
V / ns
ns
2
tCHCL
tSLCH
tCHSH
tSHCH
tCHSL
tSHSL
tCSS
CS# Active Hold Time
5
ns
CS# Not Active Setup Time
5
ns
CS# Not Active Hold Time
5
ns
tCSH
tDIS
tHO
CS# High Time
100
ns
2
tSHQZ
Output Disable Time
6
ns
tCLQX
tDVCH
tCHDX
tHLCH
tHHCH
tCHHH
tCHHL
Output Hold Time
0
2
5
5
5
5
5
ns
tDSU
tDH
Data In Setup Time
ns
Data In Hold Time
ns
HOLD# Low Setup Time ( relative to CLK )
HOLD# High Setup Time ( relative to CLK )
HOLD# Low Hold Time ( relative to CLK )
HOLD# High Hold Time ( relative to CLK )
HOLD# Low to High-Z Output
HOLD# High to Low-Z Output
Output Valid from CLK ( 75 MHz Fast read)
Output Valid from CLK ( 50 MHz Dual fast read)
Output Valid from CLK ( 33 MHz Normal read)
Write Protect Setup Time before CS# Low
Write Protect Hold Time after CS# High
CS# High to Deep Power-down Mode
ns
ns
ns
ns
2
tHZ
tLZ
tV
tHLQZ
6
6
ns
2
tHHQX
ns
tCLQV
8
ns
9
ns
13
ns
3
tWHSL
20
ns
3
tSHWL
100
ns
2
tDP
3
3
µs
CS# High to Standby Mode without Electronic
Signature read
2
tRES1
µs
µs
CS# High to Standby Mode with Electronic
Signature read
2
tRES2
1.8
tW
Write Status Register Cycle Time
Page Programming Time
Sector Erase Time
20
50
5
ms
ms
s
tPP
tSE
tBE
tCE
1.3
0.09
0.5
5
0.3
2
Block Erase Time
s
20
s
Chip Erase Time
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
28
Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 25. Serial Output Timing
Figure 26. Input Timing
Figure 27. Hold Timing
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
29
Rev. D, Issue Date: 2009/05/15
EN25S80
ABSOLUTE MAXIMUM RATINGS
Stresses above the values so mentioned above may cause permanent damage to the device. These
values are for a stress rating only and do not imply that the device should be operated at conditions up
to or above these values. Exposure of the device to the maximum rating values for extended periods of
time may adversely affect the device reliability.
Parameter
Value
Unit
Storage Temperature
-65 to +150
°C
Plastic Packages
-65 to +125
200
°C
Output Short Circuit Current1
mA
Input and Output Voltage
(with respect to ground) 2
-0.5 to Vcc+0.5
-0.5 to Vcc+0.5
V
V
Vcc
Notes:
1.
2.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of
up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods up to 20ns. See figure below.
RECOMMENDED OPERATING RANGES 1
Parameter
Value
-40 to 85
Unit
Ambient Operating Temperature
Industrial Devices
°C
Operating Supply Voltage
Vcc
Full: 1.65 to 1.95
V
Notes:
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
30
Rev. D, Issue Date: 2009/05/15
EN25S80
Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Data Retention Time
Test Conditions
Min
Unit
150°C
125°C
10
Years
20
Years
cycles
Erase/Program Endurance
-40 to 85 °C
100k
Table 13. CAPACITANCE
( VCC = 1.65-1.95V)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
V
= 0
IN
IN
Input Capacitance
Output Capacitance
6
pF
C
OUT
V
OUT
= 0
8
pF
Note : Sampled only, not 100% tested, at T = 25°C and a frequency of 20MHz.
A
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
31
Rev. D, Issue Date: 2009/05/15
EN25S80
PACKAGE MECHANICAL
Figure 28. SOP 8 ( 150 mil )
b
e
Detail A
Detail A
DIMENSION IN MM
SYMBOL
MIN.
NOR
- - -
- - -
- - -
- - -
- - -
- - -
1.27
- - -
- - -
- - -
MAX
A
A1
A2
D
1.35
0.10
- - -
1.75
0.25
1.50
5.00
6.20
4.00
- - -
4.80
5.80
3.80
- - -
E
E1
e
b
0.33
0.4
00
0.51
1.27
80
L
θ
Note : 1. Coplanarity: 0.1 mm
2. Max. allowable mold flash is 0.15 mm
at the pkg ends, 0.25 mm between leads.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
32
Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 29. SOP 200 mil ( Official name = 208 mil )
DIMENSION IN MM
SYMBOL
MIN.
1.75
0.05
1.70
5.15
7.70
5.15
- - -
NOR
1.975
0.15
MAX
2.20
0.25
1.95
5.40
8.10
5.40
- - -
A
A1
A2
D
1.825
5.275
7.90
E
E1
e
5.275
1.27
b
0.35
0.5
00
0.425
0.65
40
0.50
0.80
80
L
θ
Note : 1. Coplanarity: 0.1 mm
2. Max. allowable mold flash is 0.15 mm
at the pkg ends, 0.25 mm between leads.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
33
Rev. D, Issue Date: 2009/05/15
EN25S80
Figure 30. VDFN8 ( 5x6mm )
DIMENSION IN MM
SYMBOL
A
MIN.
0.70
NOR
0.75
MAX
0.80
A1
A2
D
0.00
- - -
5.90
4.90
3.30
3.90
- - -
0.02
0.20
6.00
5.00
3.40
4.00
1.27
0.40
0.60
0.04
- - -
6.10
5.10
3.50
4.10
- - -
E
D2
E2
e
b
L
0.35
0.55
0.45
0.65
Note: 1. Coplanarity: 0.1 mm
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
34
Rev. D, Issue Date: 2009/05/15
EN25S80
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
35
Rev. D, Issue Date: 2009/05/15
EN25S80
ORDERING INFORMATION
EN25S80
-
75
H
I
P
PACKAGING CONTENT
(Blank) = Conventional
P = RoHS compliant
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
PACKAGE
G = 8-pin 150mil SOP
H = 8-pin 200mil SOP
W = 8-pin VDFN
SPEED
75 = 75 MHz
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
25S = 1.8V Serial Flash with 4KB Uniform-Sector
80 = 8 Megabit (1024K x 8)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
36
Rev. D, Issue Date: 2009/05/15
EN25S80
Revisions List
Revision No Description
Date
A
Preliminary version
2008/10/03
1. Modify device ID in Table 5 on Page 11
2. Modify tCLQV in Table 11 on Page28
3. Add cFeon new top marking notice on Page 35
1. Remove Quad mode spec.
B
2008/12/31
2. Correction word OTP 512 to 256 byte on page 24
3. Update page program, Sector erase, Block erase time and
Chip erase time on page1 and 27
4. Modify fR from 50 to 33MHz
C
D
2009/02/18
5. Correction word tCH and tCL on page 27
6. Modify tW from Typ 10ms and Max 15ms to Typ 20ms and
Max to 50ms
7. Add package 8 pins SOP 150mil body width
8. Modify V test condition and Max value to 0.3V in table 9
OL
1. Update Block erase: from 0.4s to 0.5s on page 1 and 28.
2. Add the description of OTP erase command on page 10 and page
25.
2009/05/15
3. Recover the Dual Input / Output FAST_READ (BBh) spec. on page
18
4. Correction typo for mapping to sector from 1023 to 255 on page 25.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
37
Rev. D, Issue Date: 2009/05/15
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