EN25Q32B_技术文档

EN25Q32B

32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.3ms typical

- Sector erase time: 90ms typical

- Block erase time 500ms typical

- Chip erase time: 25 seconds typical

• 32 M-bit Serial Flash

- 32 M-bit/4096 K-byte/16384 pages

- 256 bytes per programmable page

• Standard, Dual or Quad SPI

- Standard SPI: CLK, CS#, DI, DO, WP#

- Dual SPI: CLK, CS#, DQ₀, DQ₁, WP#

- Quad SPI: CLK, CS#, DQ₀, DQ₁, DQ₂, DQ₃

• Lockable 512 byte OTP security sector

• Minimum 100K endurance cycle

• High performance

• Package Options

- 8 pins SOP 200mil body width

- 8 contact VDFN

- 8 pins PDIP

- 104MHz clock rate for one data bit

- 80MHz clock rate for two data bits

- 50MHz clock rate for four data bits

- 16 pins SOP 300mil body width

- 24 balls TFBGA (6x8mm)

- All Pb-free packages are RoHS compliant

• Low power consumption

- 12 mA typical active current

- 1 μA typical power down current

• Industrial temperature Range

• Uniform Sector Architecture:

- 1024 sectors of 4-Kbyte

- 64 blocks of 64-Kbyte

- Any sector or block can be erased individually

GENERAL DESCRIPTION

The EN25Q32B is a 32 Megabit (4096K-byte) Serial Flash memory, with advanced write protection

mechanisms. The EN25Q32B supports the standard Serial Peripheral Interface (SPI), and a high

performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ₀(DI),

DQ₁(DO), DQ₂(WP#) and DQ₃(NC). SPI clock frequencies of up to 80MHz are supported allowing

equivalent clock rates of 160MHz for Dual Output when using the Dual Output Fast Read instructions,

and SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 200MHz for

Quad Output when using the Quad Output Fast Read instructions. The memory can be programmed 1

to 256 bytes at a time, using the Page Program instruction.

The EN25Q32B is designed to allow either single Sector/Block at a time or full chip erase operation. The

EN25Q32B can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

1

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure.1 CONNECTION DIAGRAMS

CS#

VCC

1

2

3

4

8

7

6

5

DO (DQ₁)

WP# (DQ₂)

VSS

NC (DQ₃)

CLK

DI (DQ₀)

8 - LEAD SOP / PDIP

CS#

VCC

1

2

3

4

8

7

6

5

DO (DQ₁)

WP# (DQ₂)

VSS

NC (DQ₃)

CLK

DI (DQ₀)

8 - LEAD VDFN

16 - LEAD SOP

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

2

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Top View, Balls Facing Down

24 - Ball TFBGA

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

3

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 2. BLOCK DIAGRAM

Note:

1. DQ₀and DQ₁are used for Dual and Quad instructions.

2. DQ₀~ DQ₃are used for Quad instructions.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

4

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 1. Pin Names

Symbol

CLK

Pin Name

Serial Clock Input

*1

DI (DQ₀)

DO (DQ₁)

CS#

Serial Data Input (Data Input Output 0)

*1

Serial Data Output (Data Input Output 1)

Chip Enable

*2

WP# (DQ₂)

NC(DQ₃)

Vcc

Write Protect (Data Input Output 2)

*2

Not Connect (Data Input Output 3)

Supply Voltage (2.7-3.6V)

Ground

Vss

No Connect

NC

Note:

1. DQ₀and DQ₁are used for Dual and Quad instructions.

2. DQ₀~ DQ₃are used for Quad instructions.

SIGNAL DESCRIPTION

Serial Data Input, Output and IOs (DI, DO and DQ₀, DQ₁, DQ₂, DQ₃)

The EN25Q32B support standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions

use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the

rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to

read data or status from the device on the falling edge CLK.

Dual and Quad SPI instruction use the bidirectional IO pins to serially write instruction, addresses or

data to the device on the rising edge of CLK and read data or status from the device on the falling edge

of CLK.

Serial Clock (CLK)

The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See

SPI Mode")

Chip Select (CS#)

The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is

deselected and the Serial Data Output (DO, or DQ₀, DQ₁, DQ₂and DQ₃) pins are at high impedance.

When deselected, the devices power consumption will be at standby levels unless an internal erase,

program or status register cycle is in progress. When CS# is brought low the device will be selected,

power consumption will increase to active levels and instructions can be written to and data read from

the device. After power-up, CS# must transition from high to low before a new instruction will be

accepted.

Write Protect (WP#)

The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in

conjunction with the Status Register’s Block Protect (BP0, BP1, BP2 and BP3) bits and Status Register

Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The WP# function

is only available for standard SPI and Dual SPI operation, when during Quad SPI, this pin is the Serial

Data IO (DQ₂) for Quad I/O operation.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

5

Rev. D, Issue Date: 2011/07/07

EN25Q32B

MEMORY ORGANIZATION

The memory is organized as:

z

4,194,304 bytes

Uniform Sector Architecture

64 blocks of 64-Kbyte

1024 sectors of 4-Kbyte

16384 pages (256 bytes each)

z

Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,

Block or Chip Erasable but not Page Erasable.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

6

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 2. Uniform Block Sector Architecture ( 1/2 )

Block

63

Sector

1023

Address range

Block

47

Sector

767

Address range

2FF000h

2FFFFFh

3FF000h

3FFFFFh

1008

1007

3F0000h

3EF000h

3F0FFFh

3EFFFFh

752

751

2F0000h

2EF000h

2F0FFFh

2EFFFFh

62

61

60

59

58

57

56

55

54

53

52

51

50

49

48

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

992

991

3E0000h

3DF000h

3E0FFFh

3DFFFFh

736

735

2E0000h

2DF000h

2E0FFFh

2DFFFFh

976

975

3D0000h

3CF000h

3D0FFFh

3CFFFFh

720

719

2D0000h

2CF000h

2D0FFFh

2CFFFFh

960

959

3C0000h

3BF000h

3C0FFFh

3BFFFFh

704

703

2C0000h

2BF000h

2C0FFFh

2BFFFFh

944

943

3B0000h

3AF000h

3B0FFFh

3AFFFFh

688

687

2B0000h

2AF000h

2B0FFFh

2AFFFFh

928

927

3A0000h

39F000h

3A0FFFh

39FFFFh

672

671

2A0000h

29F000h

2A0FFFh

29FFFFh

912

911

390000h

38F000h

390FFFh

38FFFFh

656

655

290000h

28F000h

290FFFh

28FFFFh

896

895

380000h

37F000h

380FFFh

37FFFFh

640

639

280000h

27F000h

280FFFh

27FFFFh

880

879

370000h

36F000h

370FFFh

36FFFFh

624

623

270000h

26F000h

270FFFh

26FFFFh

864

863

360000h

35F000h

360FFFh

35FFFFh

608

607

260000h

25F000h

260FFFh

25FFFFh

848

847

350000h

34F000h

350FFFh

34FFFFh

592

591

250000h

24F000h

250FFFh

24FFFFh

832

831

340000h

33F000h

340FFFh

33FFFFh

576

575

240000h

23F000h

240FFFh

23FFFFh

816

815

330000h

32F000h

330FFFh

32FFFFh

560

559

230000h

22F000h

230FFFh

22FFFFh

800

799

320000h

31F000h

320FFFh

31FFFFh

544

543

220000h

21F000h

220FFFh

21FFFFh

784

783

310000h

30F000h

310FFFh

30FFFFh

528

527

210000h

20F000h

210FFFh

20FFFFh

768

300000h

300FFFh

512

200000h

200FFFh

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

7

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 2. Uniform Block Sector Architecture ( 2/2 )

Block

31

Sector

511

Address range

Block

15

Sector

255

Address range

1FF000h

1FFFFFh

0FF000h

0FFFFFh

496

495

1F0000h

1EF000h

1F0FFFh

1EFFFFh

240

239

0F0000h

0EF000h

0F0FFFh

0EFFFFh

30

29

28

27

26

25

24

23

22

21

20

19

18

17

16

14

13

12

11

10

9

480

479

1E0000h

1DF000h

1E0FFFh

1DFFFFh

224

223

0E0000h

0DF000h

0E0FFFh

0DFFFFh

464

463

1D0000h

1CF000h

1D0FFFh

1CFFFFh

208

207

0D0000h

0CF000h

0D0FFFh

0CFFFFh

448

447

1C0000h

1BF000h

1C0FFFh

1BFFFFh

192

191

0C0000h

0BF000h

0C0FFFh

0BFFFFh

432

431

1B0000h

1AF000h

1B0FFFh

1AFFFFh

176

175

0B0000h

0AF000h

0B0FFFh

0AFFFFh

416

415

1A0000h

19F000h

1A0FFFh

19FFFF

160

159

0A0000h

09F000h

0A0FFFh

09FFFFh

400

399

190000h

18F000h

190FFFh

18FFFFh

144

143

090000h

08F000h

090FFFh

08FFFFh

8

384

383

180000h

17F000h

180FFFh

17FFFFh

128

127

080000h

07F000h

080FFFh

07FFFFh

7

368

367

170000h

16F000h

170FFFh

16FFFFh

112

111

070000h

06F000h

070FFFh

06FFFFh

6

352

351

160000

15F000

160FFFh

15FFFFh

96

95

060000h

05F000h

060FFFh

05FFFFh

5

336

335

150000h

14F000h

150FFFh

14FFFFh

80

79

050000h

04F000h

050FFFh

04FFFFh

4

320

319

140000h

13F000h

140FFFh

13FFFFh

64

63

040000h

03F000h

040FFFh

03FFFFh

3

304

303

130000h

12F000h

130FFFh

12FFFFh

48

47

030000h

02F000h

030FFFh

02FFFFh

2

288

287

120000h

11F000h

120FFFh

11FFFFh

32

31

020000h

01F000h

020FFFh

01FFFFh

1

272

271

110000h

10F000h

110FFFh

10FFFFh

16

15

010000h

00F000h

010FFFh

00FFFFh

256

100000h

100FFFh

4

3

2

1

0

004000h

003000h

002000h

001000h

000000h

004FFFh

003FFFh

002FFFh

001FFFh

000FFFh

0

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

8

Rev. D, Issue Date: 2011/07/07

EN25Q32B

OPERATING FEATURES

Standard SPI Modes

The EN25Q32B is accessed through a SPI compatible bus consisting of four signals: Serial Clock

(CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation

Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as

shown in Figure 3, concerns the normal state of the CLK signal when the SPI bus master is in standby

and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For

Mode 3 the CLK signal is normally high. In either case data input on the DI pin is sampled on the rising

edge of the CLK. Data output on the DO pin is clocked out on the falling edge of CLK.

Figure 3. SPI Modes

Dual SPI Instruction

The EN25Q32B supports Dual SPI operation when using the “ Dual Output Fast Read and Dual I/O

Fast Read “ (3Bh and BBh) instructions. These instructions allow data to be transferred to or from the

Serial Flash memory at two to three times the rate possible with the standard SPI. The Dual Read

instructions are ideal for quickly downloading code from Flash to RAM upon power-up (code-shadowing)

or for application that cache code-segments to RAM for execution. The Dual output feature simply

allows the SPI input pin to also serve as an output during this instruction. When using Dual SPI

instructions the DI and DO pins become bidirectional I/O pins; DQ₀and DQ₁. All other operations use

the standard SPI interface with single output signal.

Quad SPI Instruction

The EN25Q32B supports Quad output operation when using the Quad I/O Fast Read (EBh).This

instruction allows data to be transferred to or from the Serial Flash memory at four to six times the rate

possible with the standard SPI. The Quad Read instruction offer a significant improvement in

continuous and random access transfer rates allowing fast code-shadowing to RAM or for application

that cache code-segments to RAM for execution. The EN25Q32B also supports full Quad Mode

function while using the Enable Quad Peripheral Interface mode (EQPI) (38h). When using Quad SPI

instruction the DI and DO pins become bidirectional I/O pins; DQ₀and DQ_1,and the WP# and NC pins

become DQ₂and DQ₃respectively.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

9

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 4. Quad SPI Modes

Page Programming

To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and

a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal

Program cycle (of duration t_PP).

To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed

at a time (changing bits from 1 to 0) provided that they lie in consecutive addresses on the same page

of memory.

Sector Erase, Block Erase and Chip Erase

The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the

bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a time,

using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE) instruction or

throughout the entire memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle

(of duration t_SEt_BEor t_CE). The Erase instruction must be preceded by a Write Enable (WREN)

instruction.

Polling During a Write, Program or Erase Cycle

A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE or

CE) can be achieved by not waiting for the worst case delay (t_W, t_PP, t_SE, t_BEor t_CE). The Write In

Progress (WIP) bit is provided in the Status Register so that the application program can monitor its

value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.

Active Power, Stand-by Power and Deep Power-Down Modes

When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip

Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal

cycles have completed (Program, Erase, Write Status Register). The device then goes into the Stand-

by Power mode. The device consumption drops to I_CC1

.

The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down

Mode (DP) instruction) is executed. The device consumption drops further to I_CC2. The device remains

in this mode until another specific instruction (the Release from Deep Power-down Mode and Read

Device ID (RDI) instruction) is executed.

All other instructions are ignored while the device is in the Deep Power-down mode. This can be used

as an extra software protection mechanism, when the device is not in active use, to protect the device

from inadvertent Write, Program or Erase instructions.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

10

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Status Register

The Status Register contains a number of status and control bits that can be read or set (as appropriate)

by specific instructions.

WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status

Register, Program or Erase cycle.

WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits are non-volatile. They define

the size of the area to be software protected against Program and Erase instructions.

WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory

default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI

mode.)

SRP bit / OTP_LOCK bit The Status Register Protect (SRP) bit operates in conjunction with the Write

Protect (WP#) signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the

device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status

Register (SRP, BP3, BP2, BP1, BP0) become read-only bits.

In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal

sector while OTP_LOCK bit value is equal 0, after OTP_LOCK bit is programmed with 1 by WRSR

command, the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only

be programmed once.

Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,

user must clear the protect bits before entering OTP mode and program the OTP code, then execute

WRSR command to lock the OTP sector before leaving OTP mode.

Write Protection

Applications that use non-volatile memory must take into consideration the possibility of noise and other

adverse system conditions that may compromise data integrity. To address this concern the

EN25Q32B provides the following data protection mechanisms:

z

Power-On Reset and an internal timer (t ) can provide protection against inadvertent changes

PUW

while the power supply is outside the operating specification.

z

Program, Erase and Write Status Register instructions are checked that they consist of a number

of clock pulses that is a multiple of eight, before they are accepted for execution.

All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set

the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events:

– Power-up

–

Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction

completion or Page Program (PP) instruction completion or Sector Erase (SE) instruction

completion or Block Erase (BE) instruction completion or Chip Erase (CE) instruction

completion

z

The Block Protect (BP3, BP2, BP1, BP0) bits allow part of the memory to be configured as read-

only. This is the Software Protected Mode (SPM).

The Write Protect (WP#) signal allows the Block Protect (BP3, BP2, BP1, BP0) bits and Status

Register Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).

In addition to the low power consumption feature, the Deep Power-down mode offers extra

software protection from inadvertent Write, Program and Erase instructions, as all instructions are

ignored except one particular instruction (the Release from Deep Power-down instruction).

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

11

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 3. Protected Area Sizes Sector Organization

Status Register Content

Memory Content

BP3 BP2 BP1 BP0

Protect Areas

Addresses

None

Density(KB)

None

Portion

Bit

0

1

Bit

0

1

0

1

Bit

0

1

0

1

0

1

0

1

Bit

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

None

Block 0 to 62

Block 0 to 61

Block 0 to 59

Block 0 to 55

Block 0 to 47

Block 0 to 31

All

000000h-3EFFFFh 4032KB

000000h-3DFFFFh 3968KB

000000h-3BFFFFh 3840KB

000000h-37FFFFh 3584KB

000000h-2FFFFFh 3072KB

000000h-1FFFFFh 2048KB

000000h-3FFFFFh 4096KB

Lower 63/64

Lower 62/64

Lower 60/64

Lower 56/64

Lower 48/64

Lower 32/64

All

None

Block 63 to 1

Block 63 to 2

Block 63 to 4

Block 63 to 8

Block 63 to 16 3FFFFFh-100000h 3072KB

Block 63 to 32 3FFFFFh-200000h 2048KB

3FFFFFh-010000h 4032KB

3FFFFFh-020000h 3968KB

3FFFFFh-040000h 3840KB

3FFFFFh-080000h 3584KB

Upper 63/64

Upper 62/64

Upper 60/64

Upper 56/64

Upper 48/64

Upper 32/64

All

000000h-3FFFFFh 4096KB

INSTRUCTIONS

All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial

Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is

driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,

on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).

The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction

code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by

both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has

been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed

(Fast_Read), Dual Output Fast Read (3Bh), Dual I/O Fast Read (BBh), Quad Input/Output

FAST_READ (EBh), Read Status Register (RDSR) or Release from Deep Power-down, and Read

Device ID (RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence.

Chip Select (CS#) can be driven High after any bit of the data-out sequence is being shifted out.

In the case of a Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write

Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)

instruction, Chip Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction

is rejected, and is not executed. That is, Chip Select (CS#) must driven High when the number of clock

pulses after Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at

any time the input byte is not a full byte, nothing will happen and WEL will not be reset.

In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down

(RES ) minimum number of bytes specified has to be given, without which, the command will be

ignored.

In the case of Page Program, if the number of byte after the command is less than 4 (at least 1

data byte), it will be ignored too. In the case of SE and BE, exact 24-bit address is a must, any

less or more will cause the command to be ignored.

All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase

cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues

unaffected.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

12

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 4A. Instruction Set

Instruction Name

Byte 1

Code

Byte 2

Byte 3

Byte 4

Byte 5

Byte 6

n-Bytes

EQPI

(2)

38h

RSTQIO

/

Release Quad I/O or

Fast Read Enhanced

Mode

FFh

RSTEN

66h

99h

06h

(1)

RST

Write Enable

Write Disable / Exit

OTP mode

Read Status

Register

Write Status

Register

04h

05h

(3)

(S7-S0)

S7-S0

(4)

continuous

01h

02h

20h

A23-A16

A15-A8

A7-A0

D7-D0

Next byte continuous

Page Program

Sector Erase / OTP

Erase

Block Erase

D8h

Chip Erase

C7h/ 60h

B9h

Deep Power-down

(5)

Release from Deep

Power-down, and

read Device ID

Release from Deep

Power-down

dummy

(ID7-ID0)

ABh

(6)

00h

01h

(M7-M0)

(ID7-ID0)

(M7-M0)

Manufacturer/

Device ID

dummy

90h

(ID15-ID8)

(ID7-ID0) (7)

(M7-M0)

Read Identification

Enter OTP mode

9Fh

3Ah

Notes:

1. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset.

2. Device accepts eight-clocks command in Standard SPI mode, or two-clocks command in Quad SPI mode

3. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the

device on the DO pin

4. The Status Register contents will repeat continuously until CS# terminate the instruction

5. The Device ID will repeat continuously until CS# terminates the instruction

6. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminates the instruction.

00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID

7. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Table 4B. Instruction Set (Read Instruction)

Instruction Name Byte 1 Byte 2

Code

Byte 3

Byte 4

Byte 5

Byte 6

n-Bytes

Read Data

Fast Read

A23-A16

A15-A8

A7-A0

(D7-D0)

dummy

(Next byte)

(D7-D0)

continuous

03h

0Bh

(Next Byte)

continuous

(one byte

per 4 clocks,

continuous)

(one byte

per 4 clocks,

continuous)

(one byte

per 2 clocks,

continuous)

Dual Output Fast

Read

(1)

A23-A16

A15-A8

A7-A0

dummy

3Bh

BBh

EBh

(D7-D0, …)

A7-A0,

dummy

(2)

(1)

(3)

Dual I/O Fast Read

Quad I/O Fast Read

A23-A8

(D7-D0, …)

(2)

A23-A0,

dummy

(dummy,

(5)

(4)

D7-D0 )

Notes:

1. Dual Output data

DQ₀= (D6, D4, D2, D0)

DQ₁= (D7, D5, D3, D1)

2. Dual Input Address

DQ₀= A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0

DQ₁= A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1

3. Quad Data

DQ₀= (D4, D0, …… )

DQ₁= (D5, D1, …… )

DQ₂= (D6, D2, …... )

DQ₃= (D7, D3, …... )

4. Quad Input Address

DQ₀= A20, A16, A12, A8, A4, A0, dummy 4, dummy 0

DQ₁= A21, A17, A13, A9, A5, A1, dummy 5, dummy 1

DQ₂= A22, A18, A14, A10, A6, A2, dummy 6, dummy 2

DQ₃= A23, A19, A15, A11, A7, A3, dummy 7, dummy 3

5. Quad I/O Fast Read Data

DQ₀= ( dummy 12, dummy 8, dummy 4, dummy 0, D4, D0 )

DQ₁= ( dummy 13, dummy 9, dummy 5, dummy 1, D5, D1 )

DQ₂= ( dummy 14, dummy 10, dummy 6, dummy 2, D6, D2 )

DQ₃= ( dummy 15, dummy 11, dummy 7, dummy 3, D7, D3 )

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Table 5. Manufacturer and Device Identification

OP Code

ABh

(M7-M0)

(ID15-ID0)

(ID7-ID0)

15h

90h

1Ch

15h

9Fh

3016h

Enable Quad Peripheral Interface mode (EQPI) (38h)

The Enable Quad Peripheral Interface mode (EQPI) instruction will enable the flash device for Quad

SPI bus operation. Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed

input/output until a power cycle or “ Reset Quad I/O instruction “ instruction, as shown in Figure 5. The

device did not support the Read Data Bytes (READ) (03h), Dual Output Fast Read (3Bh) and Dual

Input/Output FAST_READ (BBh) modes while the Enable Quad Peripheral Interface mode (EQPI) (38h)

turns on.

Figure 5. Enable Quad Peripheral Interface mode Sequence Diagram

Reset Quad I/O (RSTQIO) or Release Quad I/O Fast Read Enhancement Mode (FFh)

The Reset Quad I/O instruction resets the device to 1-bit Standard SPI operation. To execute a Reset

Quad I/O operation, the host drives CS# low, sends the Reset Quad I/O command cycle (FFh) then,

drives CS# high. This command can’t be used in Standard SPI mode.

User also can use the 0xFFh command to release the Quad I/O Fast Read Enhancement Mode. The

detail description, please see the Quad I/O Fast Read Enhancement Mode section.

Note:

If the system is in the Quad I/O Fast Read Enhance Mode under EQPI Mode, it is necessary to execute

0xFFh command by two times. The first 0xFFh command is to release Quad I/O Fast Read Enhance

Mode, and the second 0xFFh command is to release EQPI Mode.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Reset-Enable (RSTEN) (66h) and Reset (RST) (99h)

The Reset operation is used as a system (software) reset that puts the device in normal operating

Ready mode. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST).

To reset the EN25Q32B the host drives CS# low, sends the Reset-Enable command (66h), and drives

CS# high. Next, the host drives CS# low again, sends the Reset command (99h), and drives CS# high.

The Reset operation requires the Reset-Enable command followed by the Reset command. Any

command other than the Reset command after the Reset-Enable command will disable the Reset-

Enable.

A successful command execution will reset the Status register to data = 00h, see Figure 6 for SPI Mode

and Figure 6.1 for Quad Mode. A device reset during an active Program or Erase operation aborts the

operation, which can cause the data of the targeted address range to be corrupted or lost. Depending

on the prior operation, the reset timing may vary. Recovery from a Write operation requires more

software latency time ( t_SR) than recovery from other operations.

Figure 6. Reset-Enable and Reset Sequence Diagram

Figure 6.1 . Reset-Enable and Reset Sequence Diagram under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Software Reset Flow

Initial

No

Command

= 66h ?

Yes

Reset enable

No

Command

= 99h ?

Yes

Reset start

No

Embedded

Reset Cycle

WIP = 0 ?

Yes

Reset done

Note:

1. Reset-Enable (RSTEN) (66h) and Reset (RST) (99h) commands need to match standard SPI or

EQPI (quad) mode.

2. Continue (Enhance) EB mode need to use quad Reset-Enable (RSTEN) (66h) and quad Reset (RST)

(99h) commands.

3. If user is not sure it is in SPI or Quad mode, we suggest to execute sequence as follows:

Quad Reset-Enable (RSTEN) (66h) -> Quad Reset (RST) (99h) -> SPI Reset-Enable (RSTEN) (66h)

-> SPI Reset (RST) (99h) to reset.

4. The reset command could be executed during embedded program and erase process, EQPI mode

and Continue EB mode back to SPI mode.

5. This flow cannot release the device from Deep power down mode.

6. The Status Register Bit will reset to default value after reset done.

7. If user reset device during erase, the embedded reset cycle software reset latency will take about

28us in worst case.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Write Enable (WREN) (06h)

The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit. The Write

Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase

(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.

The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the

instruction code, and then driving Chip Select (CS#) High.

The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 7. Write Enable Instruction Sequence Diagram

Write Disable (WRDI) (04h)

The Write Disable instruction (Figure 8) resets the Write Enable Latch (WEL) bit in the Status Register

to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip

Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)

high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write

Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.

The instruction sequence is shown in Figure 8.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 8. Write Disable Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 8.1 Write Enable/Disable Instruction Sequence under EQPI Mode

Read Status Register (RDSR) (05h)

The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status

Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in

progress. When one of these cycles is in progress, it is recommended to check the Write In Progress

(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register

continuously, as shown in Figure 9.

The instruction sequence is shown in Figure 9.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 9. Read Status Register Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 9.1 Read Status Register Instruction Sequence under EQPI Mode

Table 6. Status Register Bit Locations

S7

S6

S5

S4

S3

S2

S1

S0

SRP

Status

Register

Protect

WIP

(Write In

Progress bit)

(Note 3)

OTP_LOCK

BP3

BP2

BP1

BP0

WEL

(Write Enable

Latch)

WPDIS

(WP# disable)

bit

(Block

Protected bits) Protected bits) Protected bits) Protected bits)

(note 1)

1 = WP#

disable

0 = WP#

enable

1 = write

enable

0 = not write 0 = not in write

1 = write

operation

1 = status

register write sector is

disable protected

1 = OTP

(note 2)

enable

operation

Non-volatile bit

Non-volatile bit Non-volatile bit. Non-volatile bit Non-volatile bit Non-volatile bit

volatile bit

Note

1. In OTP mode, SRP bit is served as OTP_LOCK bit.

2. See the table “Protected Area Sizes Sector Organization”.

The status and control bits of the Status Register are as follows:

WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status

Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such

cycle is in progress.

WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is

reset and no Write Status Register, Program or Erase instruction is accepted.

BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits are non-volatile. They define

the size of the area to be software protected against Program and Erase instructions. These bits are

written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP3,

BP2, BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 3.) becomes protected

against Page Program (PP) Sector Erase (SE) and , Block Erase (BE), instructions. The Block Protect

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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(BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set.

The Chip Erase (CE) instruction is executed if, and only if, all Block Protect (BP3, BP2, BP1, BP0) bits

are 0.

WPDIS bit. The Write Protect disable (WPDIS) bit, non-volatile bit, when it is reset to “0” (factory

default) to enable WP# function or is set to “1” to disable WP# function (can be floating during SPI

mode.)

SRP bit / OTP_LOCK bit. The Status Register Protect (SRP) bit operates in conjunction with the Write

Protect (WP#) signal. The Status Register Write Protect (SRP) bit and Write Protect (WP#) signal allow

the device to be put in the Hardware Protected mode (when the Status Register Protect (SRP) bit is set

to 1, and Write Protect (WP#) is driven Low). In this mode, the non-volatile bits of the Status Register

(SRP, BP3, BP2, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is

no longer accepted for execution.

In OTP mode, this bit serves as OTP_LOCK bit, user can read/program/erase OTP sector as normal

sector while OTP_LOCK bit value is equal 0, after OTP_LOCK bit is programmed with 1 by WRSR

command, the OTP sector is protected from program and erase operation. The OTP_LOCK bit can only

be programmed once.

Note : In OTP mode, the WRSR command will ignore any input data and program OTP_LOCK bit to 1,

user must clear the protect bits before enter OTP mode and program the OTP code, then execute

WRSR command to lock the OTP sector before leaving OTP mode.

Write Status Register (WRSR) (01h)

The Write Status Register (WRSR) instruction allows new values to be written to the Status Register.

Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed.

After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write

Enable Latch (WEL).

The Write Status Register (WRSR) instruction is entered by driving Chip Select (CS#) Low, followed by

the instruction code and the data byte on Serial Data Input (DI).

The instruction sequence is shown in Figure 10. The Write Status Register (WRSR) instruction has no

effect on S1 and S0 of the Status Register. Chip Select (CS#) must be driven High after the eighth bit of

the data byte has been latched in. If not, the Write Status Register (WRSR) instruction is not executed.

As soon as Chip Select (CS#) is driven High, the self-timed Write Status Register cycle (whose

duration is t_W) is initiated. While the Write Status Register cycle is in progress, the Status Register may

still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1

during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is

completed, the Write Enable Latch (WEL) is reset.

The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect

(BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in

Table 3. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status

Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register

Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected

Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware

Protected Mode (HPM) is entered.

The instruction sequence is shown in Figure 10.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

NOTE : In the OTP mode, WRSR command will ignore input data and program OTP_LOCK bit to 1.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 10. Write Status Register Instruction Sequence Diagram

Figure 10.1 Write Status Register Instruction Sequence under EQPI Mode

Read Data Bytes (READ) (03h)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data

Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the

rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial

Data Output (DO), each bit being shifted out, at a maximum frequency f , during the falling edge of

R

Serial Clock (CLK).

The instruction sequence is shown in Figure 11. The first byte addressed can be at any location. The

address is automatically incremented to the next higher address after each byte of data is shifted out.

The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When

the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select

(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the

cycle that is in progress.

Figure 11. Read Data Instruction Sequence Diagram

Read Data Bytes at Higher Speed (FAST_READ) (0Bh)

The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data

Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a

dummy byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory

contents, at that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a

maximum frequency F , during the falling edge of Serial Clock (CLK).

R

The instruction sequence is shown in Figure 12. The first byte addressed can be at any location. The

address is automatically incremented to the next higher address after each byte of data is shifted out.

The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed

(FAST_READ) instruction. When the highest address is reached, the address counter rolls over to

000000h, allowing the read sequence to be continued indefinitely.

The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select

(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes

at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is

rejected without having any effects on the cycle that is in progress.

The instruction sequence is shown in Figure 12.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 12. Fast Read Instruction Sequence Diagram

Figure 12.1 Fast Read Instruction Sequence under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Dual Output Fast Read (3Bh)

The Dual Output Fast Read (3Bh) is similar to the standard Fast Read (0Bh) instruction except that

data is output on two pins, DQ₀and DQ₁, instead of just DQ₀. This allows data to be transferred from

the EN25Q32B at twice the rate of standard SPI devices. The Dual Output Fast Read instruction is

ideal for quickly downloading code from to RAM upon power-up or for applications that cache code-

segments to RAM for execution.

Similar to the Fast Read instruction, the Dual Output Fast Read instruction can operation at the highest

possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight

“dummy clocks after the 24-bit address as shown in Figure 13. The dummy clocks allow the device’s

internal circuits additional time for setting up the initial address. The input data during the dummy clock

is “don’t care”. However, the DI pin should be high-impedance prior to the falling edge of the first data

out clock.

Figure 13. Dual Output Fast Read Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Dual Input / Output FAST_READ (BBh)

The Dual I/O Fast Read (BBh) instruction allows for improved random access while maintaining two IO

pins, DQ₀and DQ₁. It is similar to the Dual Output Fast Read (3Bh) instruction but with the capability to

input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code

execution (XIP) directly from the Dual SPI in some applications.

The Dual I/O Fast Read instruction enable double throughput of Serial Flash in read mode. The

address is latched on rising edge of CLK, and data of every two bits (interleave 2 I/O pins) shift out on

the falling edge of CLK at a maximum frequency. The first address can be at any location. The address

is automatically increased to the next higher address after each byte data is shifted out, so the whole

memory can be read out at a single Dual I/O Fast Read instruction. The address counter rolls over to 0

when the highest address has been reached. Once writing Dual I/O Fast Read instruction, the following

address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in Figure 14.

Figure 14. Dual Input / Output Fast Read Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Quad Input / Output FAST_READ (EBh)

The Quad Input/Output FAST_READ (EBh) instruction is similar to the Dual I/O Fast Read (BBh)

instruction except that address and data bits are input and output through four pins, DQ₀, DQ₁, DQ₂and

DQ₃and six Dummy clocks are required prior to the data output, The Quad I/O dramatically reduces

instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI.

The Quad Input/Output FAST_READ (EBh) instruction enable quad throughput of Serial Flash in read

mode. The address is latching on rising edge of CLK, and data of every four bits (interleave on 4 I/O

pins) shift out on the falling edge of CLK at a maximum frequency F_R. The first address can be any

location. The address is automatically increased to the next higher address after each byte data is

shifted out, so the whole memory can be read out at a single Quad Input/Output FAST_READ

instruction. The address counter rolls over to 0 when the highest address has been reached. Once

writing Quad Input/Output FAST_READ instruction, the following address/dummy/data out will perform

as 4-bit instead of previous 1-bit.

The sequence of issuing Quad Input/Output FAST_READ (EBh) instruction is: CS# goes low ->

sending Quad Input/Output FAST_READ (EBh) instruction -> 24-bit address interleave on DQ₃, DQ₂,

DQ₁and DQ₀-> 6 dummy clocks -> data out interleave on DQ₃, DQ₂, DQ₁and DQ₀-> to end Quad

Input/Output FAST_READ (EBh) operation can use CS# to high at any time during data out, as shown

in Figure 15.

The instruction sequence is shown in Figure 15.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 15. Quad Input / Output Fast Read Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 15.1. Quad Input / Output Fast Read Instruction Sequence under EQPI Mode

Another sequence of issuing Quad Input/Output FAST_READ (EBh) instruction especially useful in

random access is : CS# goes low -> sending Quad Input/Output FAST_READ (EBh) instruction -> 24-

bit address interleave on DQ₃, DQ₂, DQ₁and DQ₀-> performance enhance toggling bit P[7:0] -> 4

dummy clocks -> data out interleave on DQ₃, DQ₂, DQ₁and DQ₀till CS# goes high -> CS# goes low

(reduce Quad Input/Output FAST_READ (EBh) instruction) -> 24-bit random access address, as shown

in Figure 16.

In the performance – enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0] = A5h, 5Ah,

F0h or 0Fh can make this mode continue and reduce the next Quad Input/Output FAST_READ (EBh)

instruction. Once P[7:4] is no longer toggling with P[3:0] ; likewise P[7:0] = FFh, 00h, AAh or 55h. These

commands will reset the performance enhance mode. And afterwards CS# is raised or issuing FF

command (CS# goes high -> CS# goes low -> sending 0xFFh -> CS# goes high) instead of no toggling,

the system then will escape from performance enhance mode and return to normal operation.

While Program/ Erase/ Write Status Register is in progress, Quad Input/Output FAST_READ (EBh)

instruction is rejected without impact on the Program/ Erase/ Write Status Register current cycle.

The instruction sequence is shown in Figure 16.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 16. Quad Input/Output Fast Read Enhance Performance Mode Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 16.1 Quad Input/Output Fast Read Enhance Performance Mode Sequence under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Page Program (PP) (02h)

The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be

accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write

Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).

The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-

struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least

significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the

current page are programmed from the start address of the same page (from the address whose 8

least significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration

of the sequence.

The instruction sequence is shown in Figure 17. If more than 256 bytes are sent to the device, pre-

viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed cor-

rectly within the same page. If less than 256 Data bytes are sent to device, they are correctly pro-

grammed at the requested addresses without having any effects on the other bytes of the same page.

Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,

otherwise the Page Program (PP) instruction is not executed.

As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is t

)

PP

is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the

value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page

Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,

the Write Enable Latch (WEL) bit is reset.

A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP3, BP2,

BP1, BP0) bits (see Table 3) is not executed.

The instruction sequence is shown in Figure 17.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 17. Page Program Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

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Figure 17.1 Program Instruction Sequence under EQPI Mode

Sector Erase (SE) (20h)

The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be

accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write

Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).

The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-

struction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see

Table 2) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low

for the entire duration of the sequence.

The instruction sequence is shown in Figure 18. Chip Select (CS#) must be driven High after the eighth

bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not

executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose du-

ration is t ) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read

SE

to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the

self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle

is completed, the Write Enable Latch (WEL) bit is reset.

A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP3, BP2,

BP1, BP0) bits (see Table 3) is not executed.

The instruction sequence is shown in Figure 19.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

32

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 18. Sector Erase Instruction Sequence Diagram

Block Erase (BE) (D8h)

The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be

accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write

Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).

The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the in-

struction code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see

Table 2) is a valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low

for the entire duration of the sequence.

The instruction sequence is shown in Figure 19. Chip Select (CS#) must be driven High after the eighth

bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not

executed. As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose du-

ration is t ) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to

BE

check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-

timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset.

A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP3, BP2,

BP1, BP0) bits (see Table 3) is not executed.

The instruction sequence is shown in Figure 19.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

33

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 19. Block Erase Instruction Sequence Diagram

Figure 19.1 Block/Sector Erase Instruction Sequence under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

34

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Chip Erase (CE) (C7h/60h)

The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable

(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction

has been decoded, the device sets the Write Enable Latch (WEL).

The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction

code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the

sequence.

The instruction sequence is shown in Figure 20. Chip Select (CS#) must be driven High after the eighth

bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As

soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is t ) is

CE

initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value

of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase

cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write

Enable Latch (WEL) bit is reset.

The Chip Erase (CE) instruction is executed only if all Block Protect (BP3, BP2, BP1, BP0) bits are 0.

The Chip Erase (CE) instruction is ignored if one, or more blocks are protected.

The instruction sequence is shown in Figure 20.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 20. Chip Erase Instruction Sequence Diagram

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

35

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 20.1 Chip Erase Sequence under EQPI Mode

Deep Power-down (DP) (B9h)

Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest con-

sumption mode (the Deep Power-down mode). It can also be used as an extra software protection

mechanism, while the device is not in active use, since in this mode, the device ignores all Write,

Program and Erase instructions.

Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there

is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep

Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce

the standby current (from I_CC1to I_CC2, as specified in Table 9.)

Once the device has entered the Deep Power-down mode, all instructions are ignored except the

Release from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from

this mode. The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the

Device ID of the device to be output on Serial Data Output (DO).

The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in

the Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,

followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the

entire duration of the sequence.

The instruction sequence is shown in Figure 21. Chip Select (CS#) must be driven High after the eighth

bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not

executed. As soon as Chip Select (CS#) is driven High, it requires a delay of t

before the supply

DP

current is reduced to I_CC2and the Deep Power-down mode is entered.

Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is

rejected without having any effects on the cycle that is in progress.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

36

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 21. Deep Power-down Instruction Sequence Diagram

Release from Deep Power-down and Read Device ID (RDI)

Once the device has entered the Deep Power-down mode, all instructions are ignored except the

Release from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes

the device out of the Deep Power-down mode.

Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature

that is read by the Read Identifier (RDID) instruction. The old-style Electronic Signature is supported for

reasons of backward compatibility, only, and should not be used for new designs. New designs should,

instead, make use of the JEDEC 16-bit Electronic Signature, and the Read Identifier (RDID) instruction.

When used only to release the device from the power-down state, the instruction is issued by driving

the CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 22. After

the time duration of t

(See AC Characteristics) the device will resume normal operation and other

RES1

instructions will be accepted. The CS# pin must remain high during the t

time duration.

RES1

When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by

driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device

ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in

Figure 23. The Device ID value for the EN25Q32B are listed in Table 5. The Device ID can be read

continuously. The instruction is completed by driving CS# high.

When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device

was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is

immediate. If the device was previously in the Deep Power-down mode, though, the transition to the

Standby Power mode is delayed by t

, and Chip Select (CS#) must remain High for at least t

RES2

(max), as specified in Table 11. Once in the Stand-by Power mode, the device waits to be selected, so

that it can receive, decode and execute instructions.

Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep

Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the

device, and can be applied even if the Deep Power-down mode has not been entered.

Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or

Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in

progress.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

37

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 22. Release Power-down Instruction Sequence Diagram

Figure 23. Release Power-down / Device ID Instruction Sequence Diagram

Read Manufacturer / Device ID (90h)

The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /

Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device

ID.

The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device

ID instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code

“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch)

and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as

shown in Figure 24. The Device ID values for the EN25Q32B are listed in Table 5. If the 24-bit address

is initially set to 000001h the Device ID will be read first

The instruction sequence is shown in Figure 24.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

38

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 24. Read Manufacturer / Device ID Diagram

Figure 24.1. Read Manufacturer / Device ID Diagram under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2011/07/07

39

EN25Q32B

Read Identification (RDID) (9Fh)

The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read,

followed by two bytes of device identification. The device identification indicates the memory type in the

first byte , and the memory capacity of the device in the second byte .

Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not

decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction

should not be issued while the device is in Deep Power down mode.

The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the

instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being

shifted out on Serial Data Output , each bit being shifted out during the falling edge of Serial Clock .

The instruction sequence is shown in Figure 25. The Read Identification (RDID) instruction is

terminated by driving Chip Select High at any time during data output.

When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby

Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.

The instruction sequence is shown in Figure 25.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Figure 25. Read Identification (RDID)

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

40

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 25.1. Read Identification (RDID) under EQPI Mode

Enter OTP Mode (3Ah)

This Flash has an extra 512 bytes OTP sector, user must issue ENTER OTP MODE command to read,

program or erase OTP sector. After entering OTP mode, the OTP sector is mapping to sector 1023,

SRP bit becomes OTP_LOCK bit and can be read with RDSR command. Program / Erase command

will be disabled when OTP_LOCK bit is ‘1’

WRSR command will ignore the input data and program OTP_LOCK bit to 1.

User must clear the protect bits before enter OTP mode.

OTP sector can only be program and erase before OTP_LOCK bit is set to ‘1’ and BP [3:0] = ‘0000’. In

OTP mode, user can read other sectors, but program/erase other sectors only allowed when

OTP_LOCK bit equal to ‘0’.

User can use WRDI (04h) command to exit OTP mode.

While in OTP mode, user can use Sector Erase (20h) command only to erase OTP data.

The instruction sequence is shown in Figure 26.1 while using the Enable Quad Peripheral Interface mode

(EQPI) (38h) command.

Table 7. OTP Sector Address

Sector

1023

Sector Size

512 byte

Address Range

3FF000h – 3FF1FFh

Note: The OTP sector is mapping to sector 1023

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

41

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 26. Enter OTP Mode

Figure 26.1 Enter OTP Mode Sequence under EQPI Mode

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

42

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Power-up Timing

Figure 27. Power-up Timing

Table 8. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

10

1

Max.

Unit

µs

(1)

t

VCC(min) to CS# low

VSL

(1)

t

Time delay to Write instruction

Write Inhibit Voltage

10

ms

V

PUW

(1)

1

2.5

VWI

Note:

1.The parameters are characterized only.

2. VCC (max.) is 3.6V and VCC (min.) is 2.7V

INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).

The Status Register contains 00h (all Status Register bits are 0).

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

43

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 9. DC Characteristics

(T_a= - 40°C to 85°C; V_CC= 2.7-3.6V)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

I

Input Leakage Current

± 2

µA

LI

I

Output Leakage Current

Standby Current

± 2

20

µA

LO

I

CS# = V , V = V

CC IN

CS# = V , V = V

CC IN

or V

at

CC1

SS

CC

I

Deep Power-down Current

CC2

CLK = 0.1 V

/ 0.9 V

CC

25

20

mA

104MHz, DQ = open

CLK = 0.1 V / 0.9 V

I

Operating Current (READ)

CC3

at

CC CC

80MHz, DQ = open

I

CS# = V

CC

CS# = V

CC

CS# = V

CC

CS# = V

CC

Operating Current (PP)

Operating Current (WRSR)

Operating Current (SE)

Operating Current (BE)

28

18

25

mA

CC4

I

CC5

I

CC6

I

CC7

V

0.2 V

CC

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

– 0.5

V

IL

V

0.7V

V +0.4

CC

IH

CC

V

I

= 1.6 mA

0.4

OL

V

= –100 µA

V

-0.2

OH

CC

Table 10. AC Measurement Conditions

Symbol

Parameter

Min.

Max.

Unit

Load Capacitance

20/30

pF

ns

V

C_L

Input Rise and Fall Times

5

Input Pulse Voltages

0.2V_CCto 0.8V_CC

0.3V_CCto 0.7V_CC

Input Timing Reference Voltages

Output Timing Reference Voltages

V

V_CC/ 2

Notes:

1.

C_L= 20 pF when CLK=104MHz, C_L= 30 pF when CLK = 80MHz,

Figure 28. AC Measurement I/O Waveform

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

44

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 11. AC Characteristics

(T_a= - 40°C to 85°C; V_CC= 2.7-3.6V)

Symbol

Alt

Parameter

Min

D.C.

Typ

Max

Unit

MHz

Serial Clock Frequency for:

FAST_READ, PP, SE, BE, DP, RES, WREN,

WRDI, WRSR

104

F_R

f_C

Serial Clock Frequency for:

RDSR, RDID, Dual Output Fast Read

Serial Clock Frequency for READ, Quad I/O Fast

Read

D.C.

80

50

MHz

f_R

1

t_CH

Serial Clock High Time

4

ns

1

t_CL

Serial Clock Low Time

2

t_CLCH

Serial Clock Rise Time (Slew Rate)

Serial Clock Fall Time (Slew Rate)

CS# Active Setup Time (Relative to CLK)

CS# Active Hold Time (Relative to CLK)

CS# Not Active Setup Time (Relative to CLK)

CS# Not Active Hold Time (Relative to CLK)

0.1

5

V / ns

ns

2

t_CHCL

t_SLCH

t_CHSH

t_SHCH

t_CHSL

t_CSS

5

ns

5

ns

5

ns

CS# High Time for read

CS# High Time for program/erase

15

50

ns

t_SHSL

t_CSH

2

t_DIS

t_HO

t_DSU

t_DH

t_V

t_SHQZ

Output Disable Time

6

8

ns

µs

t_CLQX

t_DVCH

t_CHDX

t_CLQV

Output Hold Time

0

2

5

Data In Setup Time

Data In Hold Time

Output Valid from CLK

3

t_WHSL

Write Protect Setup Time before CS# Low

Write Protect Hold Time after CS# High

CS# High to Deep Power-down Mode

20

3

t_SHWL

100

2

t_DP

3

CS# High to Standby Mode without Electronic

Signature read

2

t_RES1

µs

CS# High to Standby Mode with Electronic

Signature read

2

t_RES2

1.8

t_W

Write Status Register Cycle Time

Page Programming Time

Sector Erase Time

15

50

5

ms

s

t_PP

t_SE

t_BE

t_CE

1.3

0.09

0.5

25

0.3

2

Block Erase Time

s

50

s

Chip Erase Time

Note: 1. t_CH+ t_CLmust be greater than or equal to 1/ f_C

2. Value guaranteed by characterization, not 100% tested in production.

3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

45

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 29. Serial Output Timing

Figure 30. Input Timing

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

46

Rev. D, Issue Date: 2011/07/07

EN25Q32B

ABSOLUTE MAXIMUM RATINGS

Stresses above the values so mentioned above may cause permanent damage to the device. These

values are for a stress rating only and do not imply that the device should be operated at conditions up

to or above these values. Exposure of the device to the maximum rating values for extended periods of

time may adversely affect the device reliability.

Parameter

Value

Unit

Storage Temperature

-65 to +150

°C

Plastic Packages

-65 to +125

200

°C

Output Short Circuit Current¹

mA

Input and Output Voltage

(with respect to ground) ²

-0.5 to +4.0

V

Vcc

Notes:

1.

2.

No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.

Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot V_ssto –1.0V for periods of

up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is V_cc+ 0.5 V.

During voltage transitions, outputs may overshoot to V_cc+ 1.5 V for periods up to 20ns. See figure below.

RECOMMENDED OPERATING RANGES ¹

Parameter

Value

-40 to 85

Unit

Ambient Operating Temperature

Industrial Devices

°C

Operating Supply Voltage

Vcc

Full: 2.7 to 3.6

V

Notes:

1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.

Vcc

+1.5V

Maximum Negative Overshoot Waveform

Maximum Positive Overshoot Waveform

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

47

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Table 12. DATA RETENTION and ENDURANCE

Parameter Description

Data Retention Time

Test Conditions

Min

Unit

150°C

125°C

10

Years

20

Years

cycles

Erase/Program Endurance

-40 to 85 °C

100k

Table 13. CAPACITANCE

( V_CC= 2.7-3.6V)

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

C

V

= 0

IN

Input Capacitance

Output Capacitance

6

pF

C

OUT

V

OUT

= 0

8

pF

Note : Sampled only, not 100% tested, at T = 25°C and a frequency of 20MHz.

A

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

48

Rev. D, Issue Date: 2011/07/07

EN25Q32B

PACKAGE MECHANICAL

Figure 31. SOP 200 mil ( official name = 208 mil )

DIMENSION IN MM

SYMBOL

MIN.

1.75

0.05

1.70

5.15

7.70

5.15

- - -

NOR

1.975

0.15

MAX

2.20

0.25

1.95

5.40

8.10

5.40

- - -

A

A1

A2

D

1.825

5.275

7.90

E

E1

e

5.275

1.27

b

0.35

0.5

0⁰

0.425

0.65

4⁰

0.50

0.80

8⁰

L

θ

Note : 1. Coplanarity: 0.1 mm

2. Max. allowable mold flash is 0.15 mm

at the pkg ends, 0.25 mm between leads.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

49

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 32. VDFN 8 ( 5x6 mm )

Controlling dimensions are in millimeters (mm).

DIMENSION IN MM

SYMBOL

MIN.

0.70

0.00

- - -

5.90

4.90

3.30

3.90

- - -

NOR

0.75

0.02

0.20

6.00

5.00

3.40

4.00

1.27

0.40

0.60

MAX

0.80

0.04

- - -

6.10

5.10

3.50

4.10

- - -

A

A1

A2

D

E

D2

E2

e

b

L

0.35

0.55

0.45

0.65

Note : 1. Coplanarity: 0.1 mm

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

50

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 33. PDIP8

DIMENSION IN INCH

SYMBOL

MIN.

NOR

- - -

MAX

0.210

- - -

A

A1

A2

D

- - -

0.015

0.125

0.355

0.300

0.245

0.115

0.310

0

- - -

0.130

0.365

0.310

0.250

0.130

0.350

7

0.135

0.400

0.320

0.255

0.150

0.375

15

E

E1

L

e_B

Θ⁰

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

51

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 34. 16 LEAD SOP 300 mil

DIMENSION IN MM

SYMBOL

MIN.

- - -

NOR

- - -

MAX

2.65

0.30

2.40

0.30

10.50

10.65

7.60

- - -

A

A1

A2

C

0.10

2.25

0.20

10.10

10.00

7.40

- - -

0.20

- - -

0.25

10.30

- - -

D

E

E1

e

7.50

1.27

- - -

b

0.31

0.4

0⁰

0.51

1.27

8⁰

L

- - -

5⁰

θ

Note : 1. Coplanarity: 0.1 mm

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

52

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Figure 35. 24-ball Thin Profile Fine-Pitch Ball Grid Array (6 x 8 mm) Package

DI MENSI ON IN MM

NOR

SYMBOL

MIN.

- - -

MAX

1.20

0. 37

A

A1

A2

A3

D

- - -

0. 27

- - -

0.21 REF

0.54 REF

6 BSC

8 BSC

3.00

E

D1

E1

e

- - -

5.00

1.00

b

0.40

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

53

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Purpose

Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on

ICs with < cFeon > from January 1^st, 2009, and without any change of the part number and the

compositions of the Ics. Eon is still keeping the promise of quality for all the products with the

same as that of Eon delivered before. Please be advised with the change and appreciate your

kindly cooperation and fully support Eon’s product family.

Eon products’ Top Marking

cFeon Top Marking Example:

cFeon

Part Number: XXXX-XXX

Lot Number: XXXXX

Date Code: XXXXX

For More Information

Please contact your local sales office for additional information about Eon memory solutions.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

54

Rev. D, Issue Date: 2011/07/07

EN25Q32B

ORDERING INFORMATION

EN25Q32B

-

104

H

I

P

PACKAGING CONTENT

P = RoHS compliant

TEMPERATURE RANGE

I = Industrial (-40°C to +85°C)

PACKAGE

H = 8-pin 200mil SOP

W = 8-pin VDFN (5x6mm)

Q = 8-pin PDIP

F = 16-pin 300mil SOP

BB = 24-ball TFBGA (6 x 8 x 1.2mm)

SPEED

104 = 104 MHz

BASE PART NUMBER

EN = Eon Silicon Solution Inc.

25Q = 3V Serial Flash with 4KB Uniform-Sector,

Dual and Quad I/O

32 = 32 Megabit (4096K x 8)

B = version identifier

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

55

Rev. D, Issue Date: 2011/07/07

EN25Q32B

Revisions List

Revision No Description

Date

A

Initial Release

2010/10/18

1. Rename 38h command from Enable Quad I/O (EQIO) to Enable Quad

Peripheral Interface mode (EQPI).

B

2. Revise the speed of Quad SPI from 80MHz to 50MHz.

3. Update Table 11. AC Characteristics on page 45.

4. Add package option of 8 pins PDIP.

2011/01/05

1. Update Write Status Register Cycle Time from 10 (typ.) /15 (max.) ms

to 15 (typ.) / 50 (max.) ms on page 45.

2. Rename 24 Ball package from BGA to TFBGA.

1. Add the note “5. This flow cannot release the device from Deep power

down mode.” on page 17.

C

D

2011/04/18

2011/07/07

2. Correct the typo of 6 dummy clocks for EBh command on page 27.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

56

Rev. D, Issue Date: 2011/07/07


型号：	EN25Q32B
厂家：	EON SILICON SOLUTION INC.
描述：	32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector 32兆位串行闪存与4K字节扇区制服闪存
文件：	总56页 (文件大小：1114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EN25Q32B [EON]

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