EM4350A6WP27 [EMMICRO]

1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE; 1千位读/写非接触式识别装置
EM4350A6WP27
型号: EM4350A6WP27
厂家: EM MICROELECTRONIC - MARIN SA    EM MICROELECTRONIC - MARIN SA
描述:

1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE
1千位读/写非接触式识别装置

装置
文件: 总14页 (文件大小:551K)
中文:  中文翻译
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R
EM4150  
EM4350  
EM MICROELECTRONIC - MARIN SA  
1 KBit READ / WRITE  
CONTACTLESS IDENTIFICATION DEVICE  
Description  
Features  
1 KBit of EEPROM organized in 32 words of 32 bits  
The EM4150/EM4350 (previously named P4150/P4350)  
is a CMOS integrated circuit intended for use in electronic  
Read/Write RF Transponders. The chip contains 1 KBit of  
EEPROM which can be configured by the user, allowing a  
write inhibited area, a read protected area, and a read  
area output continuously at power on. The memory can  
be secured by using the 32 bit password for all write and  
read protected operations. The password can be updated,  
but never read. The fixed code serial number and device  
identification are laser programmed making every chip  
unique.  
32 bit Device Serial Number (Read Only Laser ROM)  
32 bit Device Identification (Read Only Laser ROM)  
Power-On Reset sequence  
Power Check for EEPROM write operation  
User defined Read Memory Area at Power On  
User defined Write Inhibited Memory Area  
User defined Read Protected Memory Area  
Data Transmission performed by Amplitude  
Modulation  
Two Data Rate Options 2 KBd (Opt64) or 4 KBd  
(Opt32)  
The EM4150 will transmit data to the transceiver by  
modulating the amplitude of the electromagnetic field, and  
receive data and commands in a similar way. Simple  
commands will enable write to EEPROM, to update the  
password, to read a specific memory area, and to reset  
the logic.  
Bit Period = 64 or 32 periods of field frequency  
170 pF ± 2% on chip Resonant Capacitor  
-40 to +85°C Temperature range  
100 to 150 kHz Field Frequency range  
On chip Rectifier and Voltage Limiter  
No external supply buffer capacitance needed due to  
low power consumption  
The coil of the tuned circuit is the only external component  
required, all remaining functions are integrated in the chip.  
Applications  
Ticketing  
The only difference between EM4150 and EM4350 is that  
EM4150 comes with standard sized pads, whereas  
EM4350 comes with oversized (mega) pads, ideal for use  
with bumps on die (Fig. 27).  
Automotive Immobilizer with rolling code  
High Security Hands Free Access Control  
Industrial automation with portable database  
Manufacturing automation  
Prepayment Devices  
Typical Operating Configuration  
Pin Assignment  
Coil 2  
COIL2  
COIL2  
EM4150  
L
COIL1  
COIL1  
EM4150  
Coil 1  
COIL 1  
COIL 2  
Coil terminal / Clock input  
Coil terminal  
Typical value of inductance at 125 KHz is 9.5 mH  
Fig. 1  
Fig. 2  
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EM4150  
EM4350  
Absolute Maximum Ratings  
Parameter  
Handling Procedures  
This device has built-in protection against high static  
voltages or electric fields; however, anti-static  
precautions should be taken as for any other CMOS  
component.  
Symbol  
Conditions  
Maximum AC peak current  
induced on COIL1 and COIL2  
ICOIL  
± 30 mA  
Power Supply  
VDD  
Vmax  
Vmin  
-0.3 to 6.0V  
VDD + 0.3V  
VSS – 0.3V  
-55 to °125°C  
1000V  
Unless otherwise specified, proper operation can only  
occur when all terminal voltages are kept within the  
supply voltage range.  
Maximum voltage other pads  
Minimum voltage other pads  
Storage temperature  
Tstore  
VESD  
Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Units  
Electrostatic discharge  
maximum to MIL-STD-883C  
method 3015  
Operating  
Top  
-40  
+85  
°C  
temperature  
Maximum coil  
current  
ICOIL  
Vcoil  
fcoil  
10  
mA  
Vpp  
kHz  
Stresses above these listed maximum ratings may cause  
permanent damage to the device. Exposure beyond  
specified operating conditions may affect device reliability  
or cause malfunction.  
AC Voltage on  
coil  
1)  
Supply frequency  
100  
150  
Note 1): Maximum voltage is defined by forcing 10mA on Coil1-  
Coil2  
Tranceiver  
Transponder  
Data to be sent  
to transponder  
Modulator  
Coil1  
Antenna  
Oscillator  
Driver  
EM4150  
Coil2  
Filter  
and  
Demodulator  
Gain  
Data received  
from transponder  
Data decoder  
READ MODE  
RECEIVE MODE  
Signal on  
Transponder coil  
Signal on  
Transceiver coil  
Signal on  
Transceiver coil  
Signal on  
Transponder coil  
RF Carrier  
Data  
RF Carrier  
Data  
Fig. 3  
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EM4150  
EM4350  
Electrical Characteristics  
VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated  
Parameter  
Symbol Test Conditions  
Min  
2.0  
2.6  
Typ  
Max  
Units  
Supply voltage  
VDD  
5.5  
V
V
Minimum EEPROM write  
voltage  
VDDee  
Power Check EEPROM write  
Supply current / read  
IPWcheck  
Ird  
VDD = 3V  
80  
5.0  
µA  
µA  
Read Mode  
3.0  
40  
Suppy current / write  
Iwr  
Write mode (VDD = 3V)  
70  
µA  
Modulator ON voltage drop  
VON  
0.50  
2.50  
173.5  
2.6  
V
V(COIL1–Vss) and V(COIL2-Vss) Icoil = 100µA  
V(COIL1–Vss) and V(COIL2-Vss) Icoil = 5mA  
V
Resonance Capacitor  
Cr  
Vprh  
166.5  
1.0  
170  
2.0  
pF  
Power On Reset level high  
Clock extractor input min.  
Clock extractor input max.  
EEPROM data endurance  
EEPROM retention  
Rising Supply  
V
Vclkmin  
Vclkmax  
Ncy  
Minimum voltage for Clock Extraction  
Maximum voltage to detect modulation stop  
Erase all / Write all at VDD = 5V  
Top = 55°C after 100'000 cycles (Note 1)  
Vpp  
mVpp  
cycles  
years  
50  
100'000  
10  
Tret  
Note 1: Based on 1000 hours at 150°C  
Timing Characteristics  
VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated  
All timings are derived from the field frequency and are specified as a number of RF periods.  
Parameters  
Symbol  
Test conditions  
Value  
Units  
Option : 64 clocks per bit  
Opt64  
Read Bit Period  
trdb  
tpatt  
trdw  
tpp  
twa  
tinit  
64  
320  
3200  
64  
64  
2112  
3200  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
LIW/ACK/NACK pattern Duration  
Read 1 Word Duration  
Processing Pause Time  
Write Access Time  
Initialization Time  
EEPROM write time  
including LIW  
VDD = 3 V  
twee  
Option : 32 clocks per bit  
Opt32  
Read Bit Period  
trdb  
tpatt  
trdw  
tpp  
twa  
tinit  
32  
160  
1600  
32  
32  
1056  
2624  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
LIW/ACK/NACK pattern Duration  
Read 1 Word Duration  
Processing Pause Time  
Write Access Time  
Initialization Time  
EEPROM write time  
including LIW  
VDD = 3 V  
twee  
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :  
The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.  
The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.  
ATTENTION  
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close  
to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be  
taken into account when developing reader software.  
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EM4150  
EM4350  
Block Diagram  
ROM  
Serial Data  
Encoder  
Modulator  
EEPROM  
+V  
Voltage  
Regulation  
VDD  
Coil 2  
Cr  
AC/DC  
converte  
r
Power  
Control  
Cs  
Coil 1  
Reset  
GND  
Write Enable  
Clock  
Extractor  
Sequencer  
Control  
Logic  
Command  
Decoder  
Data  
Extractor  
Fig. 4  
Functional Description  
General  
Memory Organisation  
The 1024 bit EEPROM is organised in 32 words of 32  
bits. The first three words are assigned to the Password,  
the Protection word, and the Control word. In order to  
write one of these three words, it is necessary to send  
the valid password. At fabrication, the EM4150 comes  
with all bits of the password programmed to a logic "0".  
The Password cannot be read out. The memory contains  
two extra words of Laser ROM. These words are laser  
programmed during fabrication for every chip, are unique  
and cannot be altered.  
The EM4150 is supplied by means of an electromagnetic  
field induced on the attached coil. The AC voltage is  
rectified in order to provide a DC internal supply voltage.  
When the DC voltage crosses the Power-On level, the  
chip enters the Standard Read Mode and sends data  
continuously. The data to be sent in this mode is user  
defined by storing the first and last addresses to be  
output. When the last address is sent, the chip will  
continue with the first address until the transceiver sends  
a request. In the read mode, a Listen Window (LIW) is  
generated before each word. During this time, the  
EM4150 will turn to the Receive Mode (RM) if it receives  
a valid RM pattern. The chip then expects a valid  
command.  
Memory Map  
Bit 0  
Bit 31  
EE  
EE  
PASSWORD  
PROTECTION WORD  
CONTROL WORD  
Word 0  
1
2
Mode of Operation  
EE  
EE  
928 Bits of USER  
EEPROM  
Power-On  
31  
32  
33  
DEVICE SERIAL NUMBER  
DEVICE IDENTIFICATION  
Laser  
Laser  
Init  
Get Command  
Standard  
Read Mode  
Control Word  
Protection Word  
0 - 7 First Word Read  
8 - 15 Last Word Read  
16 Password Check On/Off  
17 Read After Write On/Off  
18 - 31 User available  
0 -  
7
First Word Read Protected  
8 - 15 Last Word Read Protected  
16 - 23 First Word Write Inhibited  
24 - 31 Last Word Write Inhibited  
Execute Command  
Receive  
Mode  
request ?  
Login  
Yes  
No  
Write Word  
Write Password  
Selective Read  
Reset  
Password  
Write Only - NO Read Access  
Device Identification Word &  
Serial Number Word  
Laser Programmed - Read Only  
Send word  
On means bit set to logic '1'  
Off means bit set to logic '0'  
Fig. 6  
Fig. 5  
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EM4150  
EM4350  
Standard Read Mode  
Receive Mode  
After a Power-On Reset and upon completion of a  
command, the chip will execute the Standard Read  
Mode, in which it will send data continuously, word by  
word from the memory section defined between the First  
Word Read (FWR) and Last Word Read (LWR). When  
the last word is output, the chip will continue with the first  
word until the transceiver sends a request. If FWR and  
LWR are the same, the same word will be sent  
repetitively. The Listen Window (LIW) is generated  
before each word to check if the transceiver is sending  
data. The LIW has a duration of 320 (160 opt 32) periods  
of the RF field. FWR and LWR have to be programmed  
as valid addresses (FWR LWR and 33).  
To activate the Receive Mode, the Transceiver sends to  
the chip the RM pattern (while in the modulated phase of  
a Listen Window LIW). The EM4150 will stop sending  
data upon reception of a valid RM. The chip then expects  
a command. The RM pattern consists of 2 bits "0" sent  
by the transceiver. The first bit "0" transmitted is to be  
detected during the 64 (32 opt 32) periods where the  
modulation is "ON" in LIW.  
OUTPUT  
WORD n  
LIW  
INPUT  
RM COMMAND  
The words sent by the EM4150 comprise 32 data bits  
and parity bits. The parity bits are not stored in the  
EEPROM, but generated while the message is sent as  
described below. The parity is even for rows and  
columns, meaning that the total number of "1's" is even  
(including the parity bit).  
RM : Two Consecutive bits set to logic "0"  
Fig. 9  
Commands  
The commands are composed of nine bits : eight data  
bits and one even parity bit (total amount of "ones" is  
even including the parity bit).  
Word Organisation (Words 0 to 32)  
First bit output  
Data  
Row Even Parity  
COMMAND BITS  
FUNCTION  
D0  
D8  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
P0  
LOGIN  
0 0 0 0 0 0 0 1  
0 0 0 1 0 0 0 1  
0 0 0 1 0 0 1 0  
0 0 0 0 1 0 1 0  
1 0 0 0 0 0 0 0  
1
0
0
0
1
D9 D10 D11 D12 D13 D14 D15 P1  
D16 D17 D18 D19 D20 D21 D22 D23 P2  
D24 D25 D26 D27 D28 D29 D30 D31 P3  
PC0 PC1 PC2 PC3 PC4 PC5 PC6 PC7  
WRITE PASSWORD  
WRITE WORD  
0
Column Even Parity  
Last bit output  
logic "0"  
SELECTIVE READ MODE  
RESET  
Fig. 7a  
When a word is read protected, the output will consist of  
45 bits set to logic "0". The password has to be used to  
output correctly a read protected memory area.  
Word Organisation (Word 33)  
First bit  
Received  
C0  
ID2 ID3 ID4 ID5 ID6 ID7 ID8 ID9 P1  
R0 R1 R2 R3 R4 R5 R6 R7 P2  
CK0 CK1 CK2 CK3 CK4 CK5 CK6 CK7 P3  
C1  
C2  
C3  
C4  
C5 ID0 ID1 P0  
Parity bit  
PC0 PC1 PC2 PC3 PC4 PC5 PC6 PC7  
0
Fig. 10  
Selective Read Mode  
C0 - C5  
ID0 - ID9  
: P4150 Code set to Hexadecimal 32  
: Version Code  
The Selective Read Mode is used to read other data than  
that defined between FWR and LWR. To enter Selective  
Read Mode, the Transceiver has to send during LIW a  
Receive mode pattern (RM) to turn the EM4150 in  
Receive Mode. Then the Selective Read Mode  
Command is sent by the transceiver followed by the First  
and Last addresses to be read. The FWR and LWR are  
then replaced by the new addresses and the chip is  
operating in the same way as the Standard Read Mode.  
The control word is not modified by this command, and  
the next standard read mode operation will work with  
original FWR and LWR (Selected area is read once and  
then the chip returns to Standard Read Mode).  
R0 - R7 / CK0 - CK7 : EM reserved, and Check bits  
Fig. 7b  
Read Sequence  
POR  
INIT  
OUTPUT  
LIW LIW  
FWR  
LIW FWR+1 LWR LIW LIW  
FWR  
LIW  
LIW D0-D7 P0 D8-D15 P1 D16-D23 P2 D24-D31 P3 PC0-PC7 "0"  
To read words which are Read Protected, a Login  
command has to be sent by the transceiver prior to the  
Selective Read command. The Login command is to be  
used only once for all subsequent commands requiring a  
password.  
1 bit - 64 T0 periods (Opt64)  
32 T0 periods (Opt32)  
T0 periods :  
32 32  
128  
64  
32  
64 (Opt64)  
32 (Opt32)  
Data  
16 16  
64  
Coded Data  
T0 = Period of RF carrier frequency  
Fig. 8  
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EM4150  
EM4350  
Selective Read Mode cont.  
The Selective Read mode command is followed by a single 32-bit word containing the new first and last addresses. Bits 0  
to 7 correspond to the First Word Read and bits 8 to 15 correspond to the Last Word Read. Bits 16 to 31 have to be sent  
but are not used in the chip. The parities must be sent according to the word organisation as described in fig.7. Note that  
bit 31 is transmitted first.  
To read the device Identification or the Serial Number, the Selective Read Command allows direct access to the Laser  
programmed words. These words can also be addressed in the standard read mode by selecting the addresses  
accordingly.  
OUTPUT  
INPUT  
WORD n  
LIW  
ACK/NAK LIW  
LIW  
FWR  
LIW  
RM Selective RD ADDRESSES  
tpp  
Fig. 11  
First bit received  
Addresses Bit Stream Format  
XX  
XX  
XX  
XX  
XX  
XX  
XX  
XX  
P3 XX XX XX XX XX XX XX XX P2  
LW7 LW6 LW5 LW4 LW3 LW2 LW1 LW0 P1 FW7 FW6 FW5 FW4 FW3 FW2 FW1 FW0 P0 PC7 PC6 PC5 PC4 PC3 PC2 PC1 PC0 "0"  
Fig. 12  
Reset Command  
The Reset Command will return from any mode to the Standard Read Mode. The next word out is the FWR.  
OUTPUT  
INPUT  
WORD n  
LIW  
LIW  
FWR  
LIW  
ACK/NAK  
LIW  
RM  
RESET  
t
pp  
t
init  
Fig. 13  
Login  
The Login command is used to access protected memory areas. This command has to be used only once to perform  
several password protected commands. The Power-On sequence and the Reset command will reset the password entry,  
and a new Login command has to be received to perform further password protected operations.  
Upon reception of a correct password, the EM4150 will respond with an acknowledge pattern (ACK) and then continue in  
Standard Read Mode. If the Login is correct then password protected operations are allowed. If the password is incorrect, a  
NAK pattern is issued and password protected operations will not be possible (refer to Write Word for password data  
structure).  
OUTPUT  
INPUT  
LIW  
WORD n  
LIW  
ACK/NAK  
LIW  
FWR  
LIW  
RM  
LOGIN  
PASSWORD  
tpp  
Fig. 14  
If bit 16 of the control word is disabled (Password Check ON/OFF), the Login is still mandatory to modify the Protection  
Word, the Control Word, and the Password, but not to write in the EEPROM which is not write inhibited. In order to modify a  
write inhibited word, the Protection word has to be modified first. The Read protected area always requires the Login to be  
read. If the Write Protection Word is write protected, the write protection configuration is locked.  
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EM4150  
EM4350  
Write Password  
When a Write Password command is received, the chip next expects information on the actual valid password. The chip  
sends back an ACK pattern if the password is correct. Then the chip expects the new password consisting of 32 bits +  
parity bit to be stored in the EEPROM. The chip will respond with an ACK pattern for a correct reception of data upon  
reception of the new password, and then will send another acknowledge pattern (ACK) to announce that the data is stored  
in the EEPROM.  
The Read after Write function has no effect on this command. If the password is wrong or the  
transmission is faulty, the chip will : send a NAK pattern; return to the Standard Read Mode; and, the password will remain  
the same. (Refer to Write Word for password data structure).  
tpp  
twa  
twee  
OUTPUT  
INPUT  
ACK  
LIW  
LIW  
FWR  
LIW  
ACK  
ACK  
WORD n  
LIW  
RM WRITE PW  
ACTUAL PW  
RM  
NEW PW  
TRANSCEIVER RF FIELD "ON"  
Fig. 15  
Write Word  
The Write mode allows modification of the EEPROM contents word by word. To modify address 1 (Protection word) and  
address 2 (Control word), it is mandatory to first send a Login command in order to Log in (like in a computer). The new  
written values will take effect only after performing a Reset command. It is strongly recommended to check the result of  
modifying the contents of these addresses effecting the function of the chip. Address 0 (Password) cannot be modified with  
this command but can be changed with the Write Password command.  
Addresses 3 to 31 are programmable according to the defined protections. If the Password Check bit is off (bit 16 of control  
word) and the word is not write inhibited, the selected word can be freely modified without password. If the Password Check  
bit is on and the word is not write inhibited, the selected word can be modified with a previous Login. In any case, if the  
word is write inhibited, the protection word has to be changed before programming can occur.  
Write to Address  
Check Password bit  
Write Inhibit  
Write Operation  
(16 bit / Control word)  
(Protection word)  
0
X
X
X
OFF  
ON  
X
X
OFF  
ON  
OFF  
OFF  
ON  
Only with Write Password command  
Login always required  
Write configuration LOCKED  
Freely programmable  
Login required  
Change protection word first  
1 – 2  
1 – 2  
3 – 31  
3 – 31  
3 – 31  
Address  
0
0
A5 A4 A3 A2 A1 A0  
Note :  
Padd  
A5 in write mode always "0"  
(addresses Laser ROM)  
First bit received  
Data  
D31 D30 D29 D28 D27 D26 D25 D24 P3 D23 D22 D21 D20 D19 D18 D17 D16 P2 D15 D14  
D13 D12 .......................... D02 D01 D00 P0 PC7 PC6 PC5 PC4 PC3 PC2 PC1 PC0 "0"  
Fig. 16  
The Write Word command is followed by the address and data. The address consists of a 9 bit block containing 8 data bits  
and 1 even parity bit. Only 6 bits from the data section are used for the word addressing, and the first three bits sent must  
be "0". The data consists of 4 times 9 bit blocks, each block consisting of 8 data bits and 1 associated even parity bit and  
one additional block consisting of 8 column parity bits and "0" as stop bit (Refer to fig. 7)  
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EM4150  
EM4350  
Write Word (cont.)  
After reception of the command, the address, and the data, the EM4150 will check the parity, the write protection status, the  
Login status, and also if the available power from the RF field is sufficient. If all the conditions are satisfied, an acknowledge  
pattern (ACK) will be issued afterward and the EEPROM writing process will start. At the end of programming, the chip will  
send an Acknowledge pattern (ACK). If at least one of the checks fails, the chip will issue a no acknowledge pattern (NAK)  
instead of ACK and return to the Standard Read Mode. The Transceiver will keep the RF field permanently "ON" during the  
whole writing process time.  
The Read After Write function (bit 17 of Control word) controls the mode of operation following a write operation. When  
"ON" the latest written word will be read out and output next to the ACK pattern and two Listen Windows (LIW-LIW) even if  
the word is read protected. When "OFF", the ACK is followed immediately by a LIW-LIW and FWR. The last written word is  
not output.  
If a request from the transceiver to return in receive mode (RM) is generated during the LIW, another word can be written in.  
Otherwise, the EM4150 will return in the Standard Read Mode.  
twa  
twee  
Write 1 word  
OUTPUT  
INPUT  
WORD n  
LIW  
ACK  
ACK  
LIW  
LIW  
FWR  
RM WRITE WORD ADDRESS  
DATA  
DATA  
DATA  
TRANSCEIVER RF FIELD "ON"  
twa  
twee  
Write several words  
OUTPUT  
WORD n  
LIW  
LIW  
ACK  
ACK  
INPUT  
RM WRITE WORD ADDRESS  
RM WRITE WORD ADDRESS DATA  
TRANSCEIVER RF FIELD "ON"  
twa  
twee  
Note: The Last Written is outpout  
even if Read Protected.  
Read After Write function  
OUTPUT  
INPUT  
WORD n  
LIW  
ACK  
ACK LIW LIW Last Written LIW  
LIW  
FWR  
RM WRITE WORD ADDRESS  
TRANSCEIVER RF FIELD "ON"  
twa  
OUTPUT  
INPUT  
WORD n  
LIW  
NAK  
LIW  
LIW  
FWR  
RM WRITE WORD ADDRESS  
DATA  
TRANSCEIVER RF FIELD "ON"  
Fig. 17  
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EM4150  
EM4350  
AC/DC Converter and Voltage Limiter  
Power On Reset (POR)  
The AC/DC converter is fully integrated on chip and will  
extract the power from the incident RF field. The internal  
DC voltage will be clamped to avoid high internal DC  
voltage in strong RF fields.  
When the EM4150 with its attached coil enters an  
electromagnetic field, the built in AC/DC converter will  
supply the chip. The DC voltage is monitored and a  
Reset signal is generated to initialise the logic. The  
contents of the Control word and Protection word will be  
downloaded to enable the functions (INIT). The Power  
On Reset is also provided in order to make sure that the  
chip will start issuing correct data. Hysteresis is provided  
to avoid improper operation at the limit level.  
Resonance Capacitor  
The Resonance Capacitor is integrated, and its tolerance  
is adjusted to ± 2% over the whole production.  
Typical Capacitor Variation  
versus Temperature  
VDD  
Vprh  
Cr Tolerance [%]  
100.3  
Vprhys  
100.2  
100.1  
100.0  
99.9  
t
Reset  
tinit  
EM4150 Active  
99.8  
t
99.7  
-50  
-30  
-10  
10  
30  
50  
70  
90  
Fig. 18  
Temperature [°C]  
Fig. 19  
Lock All / Lock Memory Area  
The EM4150 can be converted to a Read Only chip or be  
configured to Read/Write and Read Only Areas by  
programming the protection word. This configuration can  
be locked by write inhibiting the Write Protection Word.  
Great care should be taken in doing this operation as  
there is no further possibility to change the Write  
Protection Word. The Control Word can also be  
protected in the same way thus freezing the operation  
mode.  
Special Timings  
The Processing Pause Time (tpp), Write Access Time  
(twa) and EEPROM Write Time (Twee) are timings  
where the EM4150 is executing internal operations.  
During these pauses, the RF field will be influenced.  
32 32  
64  
32  
(Opt64)  
(Opt32)  
3200  
2624  
(Opt64)  
(Opt32)  
(Opt64)  
RF periods :  
16 16 (Opt32)  
Clock Extractor  
tpp  
twa  
twee  
The Clock extractor will generate a system clock with a  
frequency corresponding to the frequency of the RF field.  
The system clock is used by a sequencer to generate all  
internal timings.  
During Twa and Twee, the signal on the coil is  
damped due to a higher current consumption.  
Same modulation  
as for a normal bit  
Fig. 20  
Data Extractor  
The transceiver generated field will be amplitude  
modulated to transmit data to the EM4150. The Data  
extractor demodulates the incoming signal to generate  
logic levels, and decodes the incoming data.  
Modulator  
The Data Modulator is driven by the serial data output  
from the memory which is Manchester encoded. The  
modulator will draw a large current from both coil  
terminals, thus amplitude modulating the RF field  
according to the memory data.  
9
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Copyright  
© 2004, EM Microelectronic-Marin SA  
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EM4150  
EM4350  
Communication from Transponder to the Transceiver ( READ MODE)  
The EM4150 modulates the amplitude of the RF field to transmit data to the transceiver. Data are output serially from the  
EEPROM and Manchester encoded.  
1 bit 64 periods of RF field (Opt64)  
32 periods of RF field (Opt32)  
1 bit  
1 bit  
1 bit  
32 periods (Opt64)  
16 periods (Opt32)  
Data from EEPROM  
Coded Data Measured on the COIL  
Opt64 is the chip option with a bit period corresponding to 64 periods of the RF field  
Opt32 is the chip option with a bit period corresponding to 32 periods of the RF field  
Fig. 21  
The EM4150 uses different patterns to send status information to the transceiver. Their structure can not be confused with a  
bit pattern sequence. These patterns are the Listen Window (LIW) to inform the transceiver that data can be accepted, the  
Acknowledge (ACK) indicating proper communication and end of EEPROM write, and the No Acknowledge (NAK) when  
something is wrong.  
The LIW, due to its special structure, can be used to synchronize the transceiver during a read operation. The LIW is sent  
before each word, and is sent twice before FWR.  
LIW  
ACK  
NAK  
32 32  
16 16  
128  
64  
64  
32  
64  
32  
(Opt64)  
(Opt32)  
32 32  
16 16  
96  
48  
32  
16  
96  
48  
32 (Opt64)  
16  
32 32  
16 16  
96  
48  
32  
16  
64  
32  
32 32 (Opt64)  
16 16  
(Opt32)  
(Opt32)  
Opt64 is the chip option with a bit period corresponding to 64 periods of the RF field  
Opt32 is the chip option with a bit period corresponding to 32 periods of the RF field  
All numbers represent number of periods of RF field  
Fig. 22  
Communication from the Transceiver to the Transponder (RECEIVE MODE)  
The EM4150 can be switched to the Receive Mode ONLY DURING A LISTEN WINDOW. The Transceiver is synchronized  
with the incoming data from the transponder and expects a LIW before each word. During the phase where the chip has its  
modulator "ON" (64/32 periods of RF [Opt64/Opt32] ), the transceiver has to send a bit "0". A certain phase shift in the read  
path of the transceiver can be accepted due to the fact that when entering Receive Mode, the Transceiver becomes the  
Master.  
At reception of the first "0", the chip immediately stops the LIW sequence and then expects another bit "0" to activate the  
receive mode. Once the EM4150 has received the first bit "0", the transceiver is imposing the timing for synchronisation.  
The EM4150 turns "ON" its modulator at the beginning of each frame of a bit period. To send a logic "1" bit, the transceiver  
continues to send clocks without modulation. After half a bit period, the modulation device of the EM4150 is turned "OFF"  
allowing recharge of the internal supply capacitor. To send a logic "0" bit, the transceiver stops sending clocks (100%  
modulation) during the first half of a bit period. The transceiver must not turn "OFF" the field after 7/4 clocks of the bit period  
(Opt64/Opt32). The field is stopped for the remaining first half of the bit period, and then turned "ON" again for the second  
half of the bit period. The 32rd/16th clock (Opt64/Opt32) defines the end of the bit  
To ensure synchronisation between the transceiver and the transponder, a logic bit set to "0" has to be transmitted at  
regular intervals. The RM pattern consists of two bits set to "0" thus allowing initial synchronisation. In addition, the chosen  
data structure contains even parity bits which will not allow more than eight consecutive bits set to logic "1" where no  
modulation occurs.  
10  
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Copyright © 2004, EM Microelectronic-Marin SA  
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EM4150  
EM4350  
Communication from the Transceiver to the Transponder (RECEIVE MODE) (cont.)  
While the transceiver is sending data to the transponder, two different modulations will be observed on both coils. During  
the first half of the bit period, the EM4150 is switching "ON" its modulation device causing a modulation of the RF field. This  
modulation can also be observed on the transceiver's coil. The transceiver sending a bit "0" will switch "OFF" the field,  
causing a 100% modulation being observed on the transponder coil.  
Bit  
Period  
DATA  
:
"1"  
"0"  
"0"  
"1"  
"0"  
"1"  
Transceiver  
Coil  
Transponder  
Coil  
Periods of RF field (Opt 64):  
Periods of RF field (Opt 32):  
32  
16  
32  
16  
32  
16  
32  
16  
*
Modulation induced by the Transceiver  
Recommended : 7/4 periods (Opt64/Opt32)  
*
Minimum  
: 1 period  
Modulation induced by the Transponder  
Fig. 23  
11  
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Copyright © 2004, EM Microelectronic-Marin SA  
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EM4150  
EM4350  
Pad Description  
Pad Name  
Function  
8
7
6
5
1
2
3
4
5
6
7
8
9
COIL1  
VPOS  
TEST_IN  
VDD  
TEST_OUT  
TEST  
TEST_CLK  
VSS  
COIL2  
Coil Terminal 1  
Internal supply  
9
1
Test input with pull-down  
Positive Internal Supply Voltage  
Test Output  
Test Mode Input with pull-down  
Test Clock input with pull-down  
Negative Internal Supply Voltage  
Coil terminal 2  
4
3
2
Packages  
CID Package  
PCB Package  
FRONT VIEW  
Y
Z
K
J
SYMBOL  
MIN  
8.2  
3.8  
TYP  
8.5  
4.0  
6.0  
0.5  
1.3  
0.4  
0.44  
0.127  
0.5  
MAX  
8.8  
4.2  
TOP VIEW  
B
A
B
D
e
F
g
J
K
R
X
5.8  
6.2  
0.38  
1.25  
0.3  
0.42  
0.115  
0.4  
0.62  
1.35  
0.5  
0.46  
0.139  
0.6  
MARKING  
AREA  
D
A
C2  
C1  
Dimensions are in mm  
R
SYMBOL MIN  
TYP  
MAX  
e
X
Y
Z
8.0  
4.0  
C2  
C1  
1.0  
F
F
Dimensions are in mm  
g
Fig. 24  
Fig. 25  
Chip Dimensions  
Fig. 26  
Fig. 27  
12  
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Copyright © 2004, EM Microelectronic-Marin SA  
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EM4150  
EM4350  
Ordering Information  
Die Form  
This chart shows general offering; for detailed Part Number to order, please see the table “Standard Versions” below.  
EM4150 A6 WS 11 %%%  
-
Circuit Nb:  
Customer Version:  
EM4150: standard pads  
EM4350: mega pads  
%%% = only for custom specific version  
Version:  
Bumping:  
A6 = Manchester, 64 clocks per bit  
A5 = Manchester, 32 clocks per bit  
" " (blank) = no bumps  
E = with Gold Bumps (Note 2)  
Die form:  
Thickness:  
WW = Wafer  
6 = 6 mils (152um)  
7 = 7 mils (178um)  
11 = 11 mils (280um)  
21 = 21 mils (533um)  
27 = 27 mils (686um)  
WS = Sawn Wafer/Frame  
WT = Sticky Tape  
WP = Waffle Pack (note 1)  
Packaged Devices  
This chart shows general offering; for detailed Part Number to order, please see the table “Standard Versions” below.  
EM4150 A6 CI2LC %%%  
-
Circuit Nb:  
Customer Version:  
EM4150: standard pads  
%%% = only for custom specific version  
Version:  
A6 = Manchester, 64 clocks per bit  
A5 = Manchester, 32 clocks per bit  
Package/Card & Delivery Form:  
CI2LB = CID Pack, 2 long pins (2.5mm), in tape  
CI2LC = CID Pack, 2 long pins (2.5mm), in bulk  
CI2SB = CID Pack, 2 short pins (1.25mm), in tape  
CI2SC = CID Pack, 2 short pins (1.25mm), in bulk  
CB2RC = PCB Package, 2 pins, in bulk  
SO8A = SO-8 Package, in stick (note 1)  
Remarks:  
For ordering please use table of “Standard Version” table below.  
For specifications of Delivery Form, including gold bumps, tape and bulk, as well as possible other delivery form or  
packages, please contact EM Microelectronic-Marin S.A.  
Note 1: This is a non-standard package. Please contact EM Microelectronic-Marin S.A for availability.  
Note 2: EM4350 is preferably used with gold bumps. Use of EM4150 with gold bump together with direct technology is  
subject to license, please contact EM Sales Office.  
13  
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Copyright © 2004, EM Microelectronic-Marin SA  
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EM4150  
EM4350  
Standard Versions & Samples:  
For samples please order exclusively:  
Cycle/  
bit  
Delivery  
Form  
Part Number  
Bit coding  
Pads  
Package  
EM4150A6CI2LC  
EM4150A6CB2RC  
Manchester  
Manchester  
64  
64  
Standard CID package, 2 pins (length 2.5mm) bulk  
Standard PCB Package, 2 pins bulk  
The versions below are considered standards and should be readily available. For other versions or other delivery form,  
please contact EM Microelectronic-Marin S.A. Please make sure to give complete part number when ordering, without  
spaces between characters.  
Cycle/  
bit  
Part Number  
Bit coding  
Pads  
Package/Die Form  
Delivery Form  
/ Bumping  
EM4150A5CB2RC  
EM4150A5CI2LC  
EM4150A5CI2SC  
EM4150A6CB2RC  
EM4150A6CI2LB  
EM4150A6CI2LC  
EM4150A6CI2SB  
EM4150A6CI2SC  
EM4150A6SO8A  
EM4150A6WS6  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
Manchester  
32  
32  
32  
64  
64  
64  
64  
64  
64  
64  
64  
64  
64  
Standard PCB Package, 2 pins  
bulk  
bulk  
Standard CID package, 2 pins (length 2.5mm)  
Standard CID package, 2 pins (length 1.25mm) bulk  
Standard PCB Package, 2 pins  
bulk  
tape  
bulk  
Standard CID package, 2 pins (length 2.5mm)  
Standard CID package, 2 pins (length 2.5mm)  
Standard CID package, 2 pins (length 1.25mm) tape  
Standard CID package, 2 pins (length 1.25mm) bulk  
Standard SO-8 package  
stick  
Standard Sawn wafer, 6 mils  
Standard Sawn wafer, 7 mils  
Standard Unsawn wafer, 27 mils  
Standard Unsawn wafer, 7 mils  
no bumps  
no bumps  
no bumps  
no bumps  
custom  
EM4150A6WS7  
EM4150A6WW27  
EM4150A6WW7  
EM4150XXYYY-%%%  
EM4350A6WP11E  
EM4350A6WS11E  
EM4350A6WT11E  
EM4350XXYYY-%%%  
Manchester 32/64 Standard custom  
Manchester  
Manchester  
Manchester  
64  
64  
64  
Mega  
Mega  
Mega  
Mega  
Die in waffle pack, 11 mils  
Sawn wafer, 11 mils  
Die on sticky tape, 11 mils  
custom  
with gold bumps  
with gold bumps  
with gold bumps  
custom  
Manchester 32/64  
Product Support  
Check our Web Site under Products/RF Identification section.  
Questions can be sent to info@emmicroelectronic.com  
EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry entirely embodied in an  
EM Microelectronic-Marin SA product. EM Microelectronic-Marin SA reserves the right to change the circuitry and specifications without  
notice at any time. You are strongly urged to ensure that the information given has not been superseded by a more up-to-date version.  
© EM Microelectronic-Marin SA, 08/04, Rev. F  
14  
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Copyright © 2004, EM Microelectronic-Marin SA  

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