EM682FR16EU-45LF [EMLSI]
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM; 128K X16位低功耗和低电压全CMOS静态RAM
| 型号： | EM682FR16EU-45LF |
| 厂家： | 
Emerging Memory & Logic Solutions Inc |
| 描述： | 128K x16 bit Low Power and Low Voltage Full CMOS Static RAM |
| 文件： | 总11页 (文件大小：380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EM621FV16BU Series
Low Power, 128Kx16 SRAM
Document Title
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Initial Draft
0.1 Revision
Draft Date
June 28, 2007
July 2, 2007
Remark
0.0
0.1
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)
0.2
0.2 Revision
Fix typo error
Nov. 13, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM621FV16BU Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
The EM621FV16BU series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM621FV16BU Series : 2.7V~3.6V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
- Package Type: 44-TSOP2
The EM621FV16BU series are available in KGD, JEDEC
standard 44 pin 400 mil TSOP2 package.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1.Max)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
EM621FV16BU-45LF
EM621FV16BU-55LF
EM621FV16BU-70LF
2.7V~3.6V
2.7V~3.6V
2.7V~3.6V
45ns
55ns
70ns
1 µA
1 µA
1 µA
3mA
3mA
3mA
44-TSOP2
44-TSOP2
44-TSOP2
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
44
A5
A6
A7
OE
UB
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Pre-charge Circuit
CS
LB
I/O 15
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
VCC
VSS
I/O 0
I/O 1
I/O 2
I/O 14
I/O 13
I/O 12
VSS
VCC
I/O 11
I/O 10
I/O 9
I/O 8
NC
Memory Array
1024 x 2048
9
10
11
I/O 3
VCC
VSS
I/O 4
I/O 5
I/O 6
I/O 7
12
13
14
15
16
17
18
19
20
Data
I/O0 ~ I/O7
I/O8 ~ I/O15
Cont
I/O Circuit
Data
Cont
Column Select
WE
A16
A15
A14
A13
A12
A8
A9
A10
A11
A14
A15
A16
A11
A13
A10
A12
21
22
NC
WE
OE
UB
LB
Name
CS
Function
Name
Function
Control Logic
Chip select inputs
Vcc
Power Supply
Ground
CS
OE
Output Enable input Vss
Upper Byte (I/O8~15
)
WE
Write Enable input
Address Inputs
UB
LB
Lower Byte (I/O0~7
No Connection
)
A0~A16
I/O0~I/O15 Data Inputs/Outputs NC
2
EM621FV16BU Series
Low Power, 128Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Symbol
Minimum
-0.2 to 4.0V
-0.2 to 4.0V
1.0
Unit
V
V , V
IN
OUT
V
V
CC
P
W
D
o
Operating Temperature
T
-40 to 85
A
C
* Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
I/O
I/O
Mode
Power
0-7
8-15
H
X
L
L
L
L
L
L
L
L
X
X
H
H
L
X
X
H
H
H
H
H
L
X
H
L
X
H
X
L
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Deselected
Deselected
Stand by
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
Output Disabled
Output Disabled
Lower Byte Read
X
L
H
L
L
H
L
Data Out Upper Byte Read
L
L
Data Out Data Out
Word Read
Lower Byte Write
Upper Byte Write
Word Write
X
X
X
L
H
L
Data In
High-Z
Data In
High-Z
Data In
Data In
L
H
L
L
L
Note: X means don’t care. (Must be low or high state)
3
EM621FV16BU Series
Low Power, 128Kx16 SRAM
1)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.3
0
Max
3.6
0
Unit
V
V
CC
Ground
V
V
V
SS
2)
Input high voltage
V
2.2
-
-
IH
V
+ 0.2
CC
3)
Input low voltage
V
0.6
V
IL
-0.2
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
1)
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Input capacitance
Symbol
Test Condition
V =0V
Min
Max
Unit
C
-
8
pF
IN
IO
IN
Input/Ouput capacitance
C
V =0V
-
10
pF
IO
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
ILI
VIN=VSS to VCC
Input leakage current
-1
-1
-
-
-
-
1
1
3
uA
CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
ILO
ICC
Output leakage current
Operating power supply
uA
IIO=0mA, CS=VIL, VIN=VIH or VIL
mA
Cycle time=1µs, 100% duty, IIO=0mA,
ICC1
CS<0.2V, LB<0.2V or/and UB<0.2V,
-
-
3
mA
mA
V
IN<0.2V or VIN>VCC-0.2V
45ns
55ns
70ns
-
-
-
-
-
-
-
-
35
30
25
0.4
Average operating current
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
ICC2
VOL
VOH
ISB
IOL = 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
IOH = -1.0mA
2.4
-
-
-
-
CS=VIH, Other inputs=VIH or VIL
0.3
mA
CS>VCC-0.2V
Other inputs = 0~VCC
11)
ISB1
Standby Current (CMOS)
LF
-
10
uA
o
(Typ. condition : VCC=3.3V @ 25 C)
o
(Max. condition : VCC=3.6V @ 85 C)
NOTES
1. Typical values are measured at Vcc=3.3V, T =25oC and not 100% tested.
A
4
EM621FV16BU Series
Low Power, 128Kx16 SRAM
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
3)
VTM
2)
R1
Input Pulse Level : 0.4V to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
1)
Output Load (See right) : CL = 100pF + 1 TTL (70ns)
1)
2)
CL = 30pF + 1 TTL (45ns/55ns)
R2
1)
CL
1. Including scope and Jig capacitance
2. R =3070 ohm,
R =3150 ohm
2
1
3. V =2.8V
TM
4. CL = 5pF + 1 TTL (measurement with t
, t
, t
, t
, t
)
LZ1,2 HZ1,2 OLZ OHZ WHZ
o
o
READ CYCLE (V =2.7V to 3.6V, Gnd = 0V, T = -40 C to +85 C)
cc
A
45ns
Max
55ns
Max
70ns
Min Max
Symbol
Parameter
Unit
Min
Min
Read cycle time
tRC
tAA
45
-
-
55
-
70
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
45
45
25
45
-
-
-
-
55
55
25
55
-
70
70
35
70
-
Chip select to output
tCO
tOE
tBA
-
-
Output enable to valid output
UB, LB access time
-
-
Chip select to low-Z output
UB, LB enable to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
Output hold from address change
tLZ
10
5
10
5
10
5
tBLZ
tOLZ
tHZ
-
-
-
5
-
5
-
5
-
0
20
15
15
-
0
20
20
20
-
0
25
25
25
-
tBHZ
tOHZ
tOH
0
0
0
0
0
0
10
10
10
o
o
WRITE CYCLE (V =2.7V to 3.6V, Gnd = 0V, T = -40 C to +85 C)
cc
Parameter
Write cycle time
A
45ns
Max
55ns
Max
70ns
Unit
Symbol
Min
Min
Min
Max
tWC
tCW
tAS
45
-
-
55
-
-
70
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip select to end of write
Address setup time
45
0
45
0
60
0
-
-
-
-
Address valid to end of write
UB, LB valid to end of write
Write pulse width
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
45
45
35
0
-
45
45
40
0
-
60
60
50
0
-
-
-
-
-
-
-
Write recovery time
-
-
-
Write to ouput high-Z
0
15
0
20
0
20
Data to write time overlap
Data hold from write time
End write to output low-Z
25
0
25
0
30
0
-
-
-
-
-
-
tOW
5
5
5
5
EM621FV16BU Series
Low Power, 128Kx16 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS=OE=V , UB or/and LB=V
)
IL
IL
t
RC
Address
Data Out
t
AA
t
OH
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = V )
IH
t
RC
Address
CS
t
AA
t
OH
t
CO
t
HZ
t
t
BA
OE
UB,LB
t
t
BHZ
OHZ
OE
t
OLZ
High-Z
Data Out
Data Valid
t
t
BLZ
WHZ
t
LZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
EM621FV16BU Series
Low Power, 128Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
t
WC
Address
CS
t
(2)
t
(4)
CW
WR
t
AW
t
BW
UB,LB
WE
t
(1)
WP
t
DH
t
(3)
t
AS
DW
High-Z
High-Z
Data in
Data Valid
t
WHZ
t
OW
Data out
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
t
WC
Address
CS
tAS(3)
t
(2)
t
(4)
CW
WR
t
AW
t
BW
UB,LB
t
(1)
WP
WE
t
DH
t
DW
Data in
Data Valid
High-Z
High-Z
Data out
7
EM621FV16BU Series
Low Power, 128Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)
t
WC
Address
CS
t
(2)
t
(4)
CW
WR
t
AW
t
BW
UB,LB
WE
t
(1)
t
(3)
WP
AS
t
DH
t
DW
Data in
Data Valid
High-Z
High-Z
Data out
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE
goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double
byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is
measured from the beginning of write to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS
or WE going high.
8
EM621FV16BU Series
Low Power, 128Kx16 SRAM
DATA RETENTION CHARACTERISTICS
2)
Parameter
VCC for Data Retention
Symbol
VDR
Test Condition
Min
Typ
Max
Unit
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.6
V
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
IDR
Data Retention Current
-
0.5
5.0
µA
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
0
-
-
-
-
See data retention wave form
ns
tRC
NOTES
1. See the I
measurement condition of data sheet page 4.
SB1
o
2. Typical value is measured at T =25 C and not 100% tested.
A
DATA RETENTION WAVE FORM
t
t
RDR
Data Retention Mode
SDR
V
cc
3.0V
2.2V
V
DR
CS > Vcc-0.2V
CS
GND
9
EM621FV16BU Series
Low Power, 128Kx16 SRAM
PACKAGE DIMENSIONS
44Pin - TSOP Type2
Unit : millimeters/Inches
10
EM621FV16BU Series
Low Power, 128Kx16 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
2. Product Type
3. Density
11. Power
10. Speed
4. Function
9. Package
8. Generation
7. Organization
5. Technology
6. Operating Voltage
1. Memory Component
7. Organization
EM --------------------- Memory
8 ---------------------- x8 bit
16 ---------------------- x16 bit
2. Product Type
6 ------------------------ SRAM
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
9. Package
2 ----------------------- Multiplexed
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32 sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
V ---------------------- 32 SOP
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
5. Technology
10. Speed
F ------------------------- Full CMOS
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 ---------------------- 100ns
12 ---------------------- 120ns
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
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