UF5405 [EIC]

UTRAFAST EFFICIENT RECTIFIER DIODES; UTRAFAST高效整流二极管
UF5405
型号: UF5405
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

UTRAFAST EFFICIENT RECTIFIER DIODES
UTRAFAST高效整流二极管

整流二极管 高效整流二极管
文件: 总2页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTRAFAST EFFICIENT  
RECTIFIER DIODES  
UF5400 ~ UF5408  
PRV : 50 ~ 1000 Volts  
Io : 3.0 Ampere  
DO-201AD  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.82)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
* Pb / RoHS Free  
0.375 (9.52)  
0.285 (7.24)  
1.00 (25.4)  
MIN.  
MECHANICAL DATA :  
0.052 (1.32)  
0.048 (1.22)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.16 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
RATING  
SYMBOL  
UNIT  
5400 5401 5402 5403 5404 5405 5406 5407 5408  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 300 400 500 600 800 1000  
70 140 210 280 350 420 560 700  
100 200 300 400 500 600 800 1000  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
IF(AV)  
3.0  
A
0.375"(9.5mm) Lead Length  
Ta = 55 °C  
Maximum Peak Forward Surge Current,  
8.3ms Single half sine wave superimposed  
on rated load (JEDEC Method) , Ta = 55°C  
Maximum Forward Voltage at IF = 3.0 A  
IFSM  
150  
A
1.0  
VF  
IR  
1.7  
V
mA  
mA  
ns  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
Ta = 100 °C  
IR(H)  
Trr  
75  
50  
45  
200  
75  
Maximum Reverse Recovery Time (1) TJ = 25°C  
Typical Junction Capacitance (2)  
Typical Thermal Resistance (3)  
CJ  
36  
pf  
20  
°C/W  
°C  
RqJA  
TJ  
Junction Temperature Range  
- 65 to + 150  
- 65 to + 150  
Storage Temperature Range  
TSTG  
°C  
Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
(3) Thermal Resistance from Junction to ambient with 0.375"(9.5mm) lead length, both leads attached to heatsink.  
Page 1 of 2 Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( UF5400 ~ UF5408 )  
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
Trr  
50 W  
10 W  
+ 0.5 A  
D.U.T.  
0
PULSE  
GENERATOR  
( NOTE 2 )  
+
- 0.25 A  
50 Vdc  
(approx.)  
OSCILLOSCOPE  
( NOTE 1 )  
1 W  
- 1.0 A  
SET TIME BASE FOR 25-35 ns/cm  
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.  
2. Rise time = 10 ns max., Source Impedance = 50 ohms.  
3. All Resistors = Non-inductive Types.  
1 cm  
FIG.2 - DERATING CURVE FOR OUTPUT  
FIG.3 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
RECTIFIED CURRENT  
150  
3.0  
2.4  
8.3 ms SINGLE HALF SINE WAVE  
Ta = 55 °C  
120  
90  
1.8  
1.2  
0.6  
60  
30  
60Hz RESISTIVE OR INDUCTIVE LOAD  
25 50 75 100 125  
0
0
0
150  
175  
1
2
4
6
10  
20  
40  
60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.4 - TYPICAL FORWARD CHARACTERISTICS  
FIG.5 - TYPICAL REVERSE CHARACTERISTICS  
10  
10  
100  
10  
UF5400 THRU UF5405  
TJ = 100 °C  
1.0  
1
TJ = 25 °C  
UF5406 THRU UF5408  
TJ = 25 °C  
0.1  
0.1  
Pulse Width = 300 ms  
0
20  
40  
60  
80  
100  
120  
140  
1% Duty Cycle  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 02 : March 25, 2005  

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