MR856 [EIC]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
MR856
型号: MR856
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

FAST RECOVERY RECTIFIER DIODES
快恢复整流二极管

整流二极管 快速恢复二极管
文件: 总2页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FAST RECOVERY  
RECTIFIER DIODES  
MR850 - MR858  
PRV : 50 - 600 Volts  
Io : 3.0 Amperes  
DO-201AD  
FEATURES :  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
* High current capability  
* High surge current capability  
* High reliability  
0.19 (4.82)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
0.375 (9.52)  
0.285 (7.24)  
1.00 (25.4)  
0.052 (1.32)  
0.048 (1.22)  
MIN.  
MECHANICAL DATA :  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.16 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL MR850 MR851 MR852 MR854 MR856 MR858 UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
100  
IF(AV)  
3.0  
A
0.375"(9.5mm) Lead Length  
Peak Forward Surge Current,  
Ta = 90 °C  
IFSM  
100  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Peak Forward Voltage at IF = 3.0 A  
VF  
IR  
1.25  
10  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
mA  
mA  
ns  
pf  
IR(H)  
Trr  
150  
150  
28  
Ta = 100 °C  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Junction Temperature Range  
CJ  
TJ  
- 65 to + 150  
- 65 to + 150  
°C  
°C  
Storage Temperature Range  
TSTG  
Notes :  
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
Page 1 of 2  
Rev. 01 : April 2, 2002  
RATING AND CHARACTERISTIC CURVES ( MR850 - MR858 )  
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
Trr  
50W  
10W  
+ 0.5  
D.U.T.  
0
PULSE  
GENERATOR  
( NOTE 2 )  
+
- 0.25  
50 Vdc  
(approx)  
OSCILLOSCOPE  
( NOTE 1 )  
1 W  
- 1.0 A  
SET TIME BASE FOR 50 ns/cm  
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.  
2. Rise time = 10 ns max., Source Impedance = 50 ohms.  
3. All Resistors = Non-inductive Types.  
1
FIG.2 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.3 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
100  
80  
3.0  
2.4  
8.3 ms SINGLE HALF SINE WAVE  
Ta = 50 °C  
1.8  
1.2  
0.6  
60  
40  
20  
0
60Hz RESISTIVE OR INDUCTIVE LOAD  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40  
60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( C)  
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS  
FIG.5 - TYPICAL REVERSE CHARACTERISTICS  
10  
100  
10  
Pulse Width = 300 ms  
2% Duty Cycle  
TJ = 100 °C  
TJ = 25 °C  
1.0  
0.1  
1.0  
TJ = 25 °C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 01 : April 2, 2002  

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