MR856 [EIC]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管型号: | MR856 |
厂家: | EIC DISCRETE SEMICONDUCTORS |
描述: | FAST RECOVERY RECTIFIER DIODES |
文件: | 总2页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FAST RECOVERY
RECTIFIER DIODES
MR850 - MR858
PRV : 50 - 600 Volts
Io : 3.0 Amperes
DO-201AD
FEATURES :
1.00 (25.4)
0.21 (5.33)
MIN.
* High current capability
* High surge current capability
* High reliability
0.19 (4.82)
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.375 (9.52)
0.285 (7.24)
1.00 (25.4)
0.052 (1.32)
0.048 (1.22)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL MR850 MR851 MR852 MR854 MR856 MR858 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
IF(AV)
3.0
A
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 90 °C
IFSM
100
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 3.0 A
VF
IR
1.25
10
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
ns
pf
IR(H)
Trr
150
150
28
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
CJ
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( MR850 - MR858 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50W
10W
+ 0.5
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
80
3.0
2.4
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
1.8
1.2
0.6
60
40
20
0
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
100
10
Pulse Width = 300 ms
2% Duty Cycle
TJ = 100 °C
TJ = 25 °C
1.0
0.1
1.0
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002
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