KBPC3510 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器型号: | KBPC3510 |
厂家: | EIC DISCRETE SEMICONDUCTORS |
描述: | SILICON BRIDGE RECTIFIERS |
文件: | 总2页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
KBPC3500 - KBPC3510
BR50
PRV : 50 - 1000 Volts
Io : 35 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
* High current capability
* High surge current capability
* High reliability
0.685(16.70)
0.618(15.70)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.252(6.40)
0.248(6.30)
0.028(0.71)
MECHANICAL DATA :
f 0.100(2.50)
0.090(2.30)
* Case : Metal Case
0.905(23.0)
0.826(21.0)
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBPC
3500
KBPC
3501
KBPC
3502
KBPC
3504
KBPC
3506
KBPC
3508
KBPC
3510
SYMBOL
RATING
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
35
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
V
V
V
A
Maximum DC Blocking Voltage
100
1000
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
400
IFSM
A
I2t
VF
A2S
V
660
1.1
Maximum Forward Voltage per Diode at IF = 17.5 A
10
200
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
mA
mA
°C/W
°C
IR(H)
Ta = 100 °C
1.5
RqJC
RqJA
TJ
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
10
- 40 to + 150
- 40 to + 150
°C
TSTG
°C
Note :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2 Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( KBPC3500 - KBPC3510 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
600
42
35
500
400
28
21
14
TJ = 50 °C
300
200
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
8.3 ms SINGLE HALF SINE WAVE
7
0
100
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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