GBPC2501 [EIC]
GLASS PASSIVATED SINGLE; 玻璃钝化单
| 型号： | GBPC2501 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | GLASS PASSIVATED SINGLE |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
GLASS PASSIVATED SINGLE-
PHASE BRIDGE RECTIFIERS
GBPC25005 - GBPC2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
* Glass passivated junction chip
* High surge current capability
* High current capability
* High reliability
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
MECHANICAL DATA :
0.252(6.40)
0.248(6.30)
0.032(0.81)
0.028(0.71)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
φ0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
GBPC GBPC GBPC GBPC GBPC GBPC GBPC
25005 2501 2502 2504 2506 2508 2510
RATING
SYMBOL
UNIT
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50 °C (1)
Peak Forward Surge Current Single Sine Wave
Superimposed on Rated Load
50
35
50
100
70
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
V
V
V
A
100
1000
IF(AV)
IFSM
300
375
1.1
A
I2t
A2sec
V
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)
at IF = 12.5 A
Maximum Instantaneous Forward
Voltage Drop Per Diode
VF
IR
IR(H)
5
Maximum DC Reverse Current at
Rated DC Blocking Voltage Per Diode
Ta = 25 °C
μA
μA
500
300
1.9
Ta = 125 °C
CJ
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)
Typical Thermal Resistance form Junction to Case
Operating Junction and Storage Temperature Range
pF
RӨJC
TJ, TSTG
°C/W
°C
- 55 to + 150
Note : (1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.
Page 1 of 2
Rev. 00 : June 25, 2007
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( GBPC25005 - GBPC2510 )
FIG.1 - DERATING CURVE OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER DIODE
30
300
250
TJ = Tjmax
0.5ms Single Sine- Wave
25
20
15
10
200
150
100
5 x 6 x 4.9" AL,
Finned Plate.
5
50
0
0
100
0
25
50
75
100
125
150
175
1
10
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
500
TJ = 125 °C
100
100
TJ = 150 °C
10
10
50 - 400 V
600 - 1000 V
1
1.0
TJ = 25 °C
0.1
0.1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0.01
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
20
0
40
60
80
100
INSTANTANEOUS FORWARD
VOLTAGE, (V)
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 00 : June 25, 2007
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