CN3GR [EIC]
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon,;
| 型号： | CN3GR |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, 二极管 |
| 文件： | 总2页 (文件大小：16K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CELL RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
C3A
FEATURES :
3.94
3.18
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Chip form
0.51
Anode
1.30
Cathode
0.38
MECHANICAL DATA :
* Case : C3A
* Terminals : Solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in millimeter
* Polarity : Cathode to bigger size slug, For
Anode to bigger size slug use "R" suffix.
* Mounting position : Any
* Weight : 0.11 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL CN3A CN3B CN3D CN3G CN3J CN3K CN3M UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
3.0
600
420
600
800 1000 Volts
560 700 Volts
Maximum DC Blocking Voltage
100
800 1000 Volts
Amps.
Maximum Average Forward Current Tc = 75°C
Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3 Amps.
IF(AV)
IFSM
VF
200
1.1
5.0
1.0
28
Amps.
Volts
mA
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
IR
Ta = 100 °C
IR(H)
CJ
mA
pF
Typical Junction Capacitance (Note 1)
Thermal Resistance, Junction to Case
Junction Temperature Range
RqJC
TJ
15
°C/W
°C
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC
RATING AND CHARACTERISTIC CURVES ( CN3A - CN3M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
250
200
150
100
50
3.0
2.4
1.8
1.2
Ta = 25 °C
0.6
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
20
10
200
100
50
TJ = 25 °C
10
1
f = 1.0 MHz
5.0
Vsig = 50mVp-p
Pulse Width = 300 ms
2% Duty Cycle
1.0
0.1
1
2
4
10
20
40
TJ = 25 °C
100
REVERSE VOLTAGE, VOLTS
0.01
0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
FORWARD VOLTAGE, VOLTS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20
40
60
80
100
140
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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