BR610 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | BR610 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR600 - BR610
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
BR6
0.445 (11.30)
0.405 (10.30)
0.158 (4.00)
AC
0.142 (3.60)
FEATURES :
* High current capability
* High surge current capability
* High reliability
0.62 (15.75)
0.58 (14.73)
0.127 (3.20)
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.047 (1.20)
AC
0.042 (1.06)
0.038 (0.96)
MECHANICAL DATA :
0.75 (19.1)
Min.
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
0.27 (6.9)
0.23 (5.8)
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 3.6 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherw ise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610
UNITS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000 Volts
700
Volts
Maximum DC Blocking Voltage
100
1000 Volts
Amps.
Maximum Average Forward Current Tc=50 C
IF(AV)
°
Peak Forward Surge Current,
Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
I2t
200
64
Amps.
A2S
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF =3 A.
VF
1.0
10
Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 C
IR
A
m
°
Ta = 100 C
IR(H)
200
8.0
A
m
°
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
R JC
q
C/W
°
TJ
- 40 to + 150
- 40 to + 150
C
C
°
°
TSTG
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6" x 1.4" x 0.06" THK
(6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink.
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
240
6.0
5.0
4.0
3.0
2.0
200
160
120
80
TJ = 50
C
°
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
1.0
0
40
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
TJ = 100
C
°
10
1.0
0.1
Pulse Width = 300
1 % Duty Cycle
s
m
1.0
0.1
TJ = 25
C
°
TJ = 25
C
°
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
FORWARD VOLTAGE, VOLTS
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