BR3500GW [EIC]
暂无描述;
| 型号： | BR3500GW |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | 暂无描述 整流二极管 桥式整流二极管 局域网 |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR3500 - BR3512
BR50
PRV : 50 - 1200 Volts
Io : 35 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.252(6.40)
0.248(6.30)
0.028(0.71)
f 0.100(2.50)
0.090(2.30)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR
3500
BR
3501
BR
3502
BR
3504
BR
3506
BR
3508
BR
3510
BR
3512
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
1200
VRRM
VRMS
VDC
V
V
V
A
70
700
840
Maximum DC Blocking Voltage
100
1000
1200
35
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
400
IFSM
A
I2t
VF
A2S
V
660
1.1
10
Maximum Forward Voltage per Diode at IF = 17.5 A
IR
mA
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
200
1.5
10
IR(H)
mA
Ta = 100 °C
°C/W
°C
RqJC
RqJA
TJ
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to + 150
°C
TSTG
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3512 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
600
42
35
500
400
28
21
14
TJ = 50 °C
300
200
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
8.3 ms SINGLE HALF SINE WAVE
7
0
100
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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