BR2506 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | BR2506 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR2500 - BR2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
* High current capability
* High surge current capability
* High reliability
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
f
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNITS
RRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
50
35
50
100
70
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
Volts
Volts
VRMS
DC
Maximum DC Blocking Voltage
100
1000
Volts
V
°
IF(AV)
Amps.
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 Amp.
°
FSM
I
300
375
Amps.
A2S
2t
I
VF
IR
1.1
Volts
m
A
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
°
IR(H)
m
A
200
Ta = 100 C
q
1.45
°
C/W
R JC
J
Operating Junction Temperature Range
Storage Temperature Range
T
- 40 to + 150
- 40 to + 150
°
C
TSTG
°
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
300
30
25
250
200
20
15
10
TJ = 50 °C
150
100
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
8.3 ms SINGLE HALF SINE WAVE
50
5
0
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
4
6
10
20
40 60
2
100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
FORWARD VOLTAGE, VOLTS
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