BR2502W [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器


型号：	BR2502W
厂家：	EIC DISCRETE SEMICONDUCTORS
描述：	SILICON BRIDGE RECTIFIERS 硅桥式整流器
文件：	总2页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SILICON BRIDGE RECTIFIERS

BR50W

BR2500W - BR2510W

PRV : 50 - 1000 Volts

Io : 25 Amperes

0.732 (18.6)

0.692 (17.5)

FEATURES :

* High current capability

* High surge current capability

* High reliability

1.130 (28.7)

0.470 (11.9)

1.120 (28.4)

0.430 (10.9)

* Low reverse current

* Low forward voltage drop

* High case dielectric strength

0.21 (5.3)

0.20 (5.1)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink

with silicone thermal compound between

bridge and mounting surface for maximum

heat transfer efficiency

0.042 (1.06)

0.038 (0.96)

1.2 (30.5)

MIN.

0.310 (7.87)

0.280(7.11)

Dimensions in inches and ( millimeters )

* Weight : 15.95 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

UNIT

RATING

2500W 2501W 2502W 2504W 2506W 2508W 2510W

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Amp.

Maximum DC Blocking Voltage

100

1000

IF(AV)

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IFSM

I²t

300

375

1.1

Amp.

A²S

Volts

Maximum Forward Voltage per Diode at 12.5 Amp.

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

IR(H)

1.0

Ta = 100 °C

Typical Thermal Resistance at Junction to Case ( Note 1 )

Typical Thermal Resistance at Junction to Ambient

Operating Junction Temperature Range

RqJC

RqJA

°C/W

°C

- 40 to + 150

Storage Temperature Range

TSTG

°C

Notes : 1 ) Thermal resistance from Junction to Case with units mounted on a 5" x 4" x 3" ( 12.7 x 10.2 x 7.3 cm ) Al.-wing plate.

UPDATE : APRIL 21, 1998

RATING AND CHARACTERISTIC CURVES ( BR2500W - BR2510W )

FIG.1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

300

240

180

120

= 55

5.0

8.3 ms SINGLE HALF SINE WAVE

JEDEC METHOD

P.C. Board Mounted with

SINE WAVE R-Load free in AIR

100

125

150

175

40 60 100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, ( C)

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

100

Pulse Width = 300

1 % Duty Cycle

= 100 C

1.0

0.1

1.0

= 25 C

TJ = 25

0.01

0.1

100

120

140

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

FORWARD VOLTAGE, VOLTS

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