BAS20 [EIC]
HIGH VOLTAGE SWITCHING DIODES; 高压开关二极管
| 型号： | BAS20 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | HIGH VOLTAGE SWITCHING DIODES |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
HIGH VOLTAGE
SWITCHING DIODES
SOT-23
BAS19,BAS20,BAS21
PRV : 120 - 250 Volts
IO : 200 mA
1.40
0.100
0.013
0.95
0.50
0.35
FEATURES :
3.10
2.70
* Small plastic SMD package
* Switching speed: max. 50 ns
* General application
0.19
0.08
3
1
2
* Continuous reverse voltage: max. 100V, 150V, 200V
* Repetitive peak reverse voltage: max. 120V, 200V, 250V
* Pb / RoHS Free
1.02
0.89
2.04
1.78
3
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* BAS19 Marking Code: HA
* BAS20 Marking Code: HB
* BAS21 Marking Code: HC
bottom view
1
2
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified)
Parameter
Symbol BAS19 BAS20 BAS21
Unit
VRRM
VR
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
120
100
200
150
250
200
V
V
200
IF
Maximum Continuous Forward Current (Note 1)
Maximum Non-repetitive Peak Forward Current
(square wave; Tj = 25 °C prior to surge)
mA
9
t = 1 µs
IFSM
3
A
t = 100 µs
t = 10 ms
1.7
250
Ptot
Rth j-tp
Rth j-a
TJ
Total Power Dissipation (Note 1)
Thermal Resistance Junction to Tie-point
Thermal Resistance Junction to Ambient
Junction Temperature Range
mW
K/W
K/W
°C
330
500
150
-65 to +150
TSTG
Storage Temperature Range
°C
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.
Test Condition
IF = 100 mA
Parameter
Symbol BAS19 BAS20 BAS21
Unit
1.00
Forward Voltage
VF
V
1.25
IF = 200 mA
100
VR = VRmax
Reverse Current
nA
µA
pF
IR
100
VR = VRmax, Tj = 150 °C
VR = 0 V, f = 1 MHz
IF = 30 mA to IR = 30mA,
RL =100 Ω,measure at IR =3 mA
5
CD
Trr
Capacitance
Reverse Recovery Time
50
ns
Note : (1) Device mounted on an FR4 printed circuit board.
Page 1 of 2
Rev. 01 : May 22, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES ( BAS19, BAS20, BAS21 )
FIG.1 - MAXIMUM CONTINUOUS FORWARD
CURRENT VS. AMBIENT TEMPERATER
FIG.2 - DIODE CAPACITANCE VS. REVERSE
VOLTAGE; TYPICAL VALUES
1.0
0.8
0.6
0.4
0.2
0
250
200
150
100
50
f = 1MHz; Tj = 25 °C
6
0
100
150
200
0
2
4
8
0
50
AMBIENT TEMPERATURE, (°C)
REVERSE VOLTAGE, (V)
FIG.3 - FORWARD CURRENT VS. FORWARD
VOLTAGE ; TYPICAL VALUES
FIG.4 - REVERSE CURRENT VS. JUNCTION
TEMPERATURE; TYPICAL VALUES
600
100
400
200
0
10
TJ = 150 °C
TJ = 25 °C
1
0.1
1
2
0
FORWARD VOLTAGE, (V)
VR =VRmax
0.01
0
100
150
200
50
JUNCTION TEMPERATURE, (°C)
Page 2 of 2
Rev. 01 : May 22, 2006
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