1SS132 [EIC]
HIGH SPEED SWITCHING DIODE; 高速开关二极管
| 型号： | 1SS132 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | HIGH SPEED SWITCHING DIODE |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH SPEED SWITCHING DIODE
1SS132
DO - 34 Glass
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 55 V
• Pb / RoHS Free
1.00 (25.4)
0.078 (2.0 )max.
min.
0.118 (3.0)
Cathode
max.
Mark
1.00 (25.4)
min.
0.019 (0.50)max.
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.093g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
VRRM
VRM
IF
Value
55
Unit
V
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Power Dissipation
50
V
120
mA
mA
mW
mA
°C
IFM
350
PD
300
IFSM
TJ
Maximum Non-repetitive Peak Forward Current
Maximum Junction Temperature
Storage Temperature Range
500
175
TS
-65 to + 175
°C
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Test Condition
VR = 50 V
IF = 100 mA
Min.
Typ.
Max.
Unit
Parameter
Symbol
IR
VF
CT
Reverse Current
-
-
-
-
-
-
0.5
1.2
2.0
mA
V
Forward Voltage
f = 1MHz ; VR = 0.5 V
Capacitance between terminals
pF
IF = 10 mA , VR = 6 V
Reverse Recovery Time
Trr
-
-
4.0
ns
RL = 50 W
Page 1 of 2
Rev. 01 : August 17, 2005
RATING AND CHARACTERISTIC CURVES ( 1SS132 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - POWER DARATING CURVE
150
500
400
300
200
100
120
90
60
30
0
0
0
25
50
75
100
125
150
175
0
25
50
75
75
100 125 150 175
AMBIENT TEMPERATURE, ( °C)
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
104
Ta = 100 °C
103
10
1
102
10
0
Ta = 25 °C
Ta = 25 °C
0
0.2 0.4 0.6 0.8 1.0 1.2 1..4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0
20
40
60
80
100 120
140
REVERSE VOLTAGE ,VOLTS
Page 2 of 2
Rev. 01 : August 17, 2005
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