1N5407G [EIC]

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS; 玻璃钝化结硅整流
1N5407G
型号: 1N5407G
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
玻璃钝化结硅整流

二极管
文件: 总2页 (文件大小:20K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N5400G - 1N5408G  
PRV : 50 - 1000 Volts  
Io : 3.0 Amperes  
DO - 201AD  
FEATURES :  
* Glass passivated chip  
* High current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.83)  
* Low reverse current  
* Low forward voltage drop  
0.375 (9.53)  
0.285 (7.24)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G  
SYMBOL  
VRRM  
UNIT  
1000 Volts  
700 Volts  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
VRMS  
Maximum DC Blocking Voltage  
VDC  
100  
1000 Volts  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 75 °C  
Peak Forward Surge Current  
IF(AV)  
3.0  
Amps.  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
150  
1.0  
Amps.  
Volts  
Maximum Forward Voltage at IF = 3.0 Amps.  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
IR  
IR(H)  
CJ  
5.0  
mA  
mA  
Ta = 100 °C  
50  
50  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
RqJA  
TJ  
15  
°C/W  
°C  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : MAY 27, 1998  
RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
150  
120  
90  
3.0  
2.4  
1.8  
1.2  
Ta = 25 °C  
60  
30  
0.6  
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG 4 . - TYPICAL JUNCTION CAPACITANCE  
100  
50  
100  
TJ = 25 °C  
10  
5
10  
Pulse Width = 300 ms  
2% Duty Cycle  
1
1.0  
0.1  
100  
1
2
4
10  
20  
40  
TJ = 25 °C  
REVERSE VOLTAGE, VOLTS  
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS  
0.01  
10  
0.4 0.6  
0
0.2  
0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Ta = 100 °C  
FORWARD VOLTAGE, VOLTS  
1.0  
0.1  
Ta = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  

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