1F6 [EIC]
FAST RECOVERY DIODES; 快恢复二极管
| 型号： | 1F6 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | FAST RECOVERY DIODES |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY DIODES
1F1 ~ 1F7
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
1.00 (25.4)
MIN.
0.099 (2.51)
0.95 (2.42)
FEATURES :
* High current capability
* High reliability
0.138 (3.5)
0.114 (2.9)
* Low reverse current
* Low forward voltage drop
1.00 (25.4)
* Fast switching for high efficiency
* Pb / RoHS Free
MIN.
0.024 (0.6)
0.020 (0.5)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
UNIT
1F1
1F2
1F3
1F4
1F5
1F6
1F7
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 55 °C
Peak Forward Surge Current
IF(AV)
1.0
A
IFSM
30
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A.
VF
IR
1.3
5.0
V
Maximum DC Reverse Current Ta = 25 °C
mA
mA
ns
pF
°C
°C
IR(H)
Trr
100
at rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (1)
Typical Junction Capacitance (2)
Junction Temperature Range
Storage Temperature Range
150
250
500
CJ
15
TJ
- 65 to + 125
- 65 to + 150
TSTG
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 03 : July 8, 2005
RATING AND CHARACTERISTIC CURVES ( 1F1 - 1F7 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5
D.U.T.
0
PULSE
+
- 0.25
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50-100
1 cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
24
18
12
1.0
0.8
Ta = 25 °C
0.6
0.4
0.2
0
6
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
10
TJ = 100 °C
1.0
1.0
0.1
0.1
TJ = 25 °C
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
40
60
80
100
120
140
0
20
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 03 : July 8, 2005
相关型号：
1F6-BP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
MCC
1F6-TP
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
MCC
1F630011-S76H0N-AF
Board Connector, 1 Contact(s), 1 Row(s), Male, Straight, Solder Terminal, LEAD FREE
FOXCONN
©2020 ICPDF网 联系我们和版权申明