10A01 [EIC]
SILICON RECTIFIER DIODES; 硅整流二极管
| 型号： | 10A01 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON RECTIFIER DIODES
D6
PRV : 50 - 1000 Volts
Io : 10 Amperes
1.00 (25.4)
0.360 (9.1)
MIN.
FEATURES :
* Diffused Junction
0.340 (8.6)
* High current capability and Low Forward
Voltage Drop
0.360 (9.1)
0.340 (8.6)
* Surge Overload Rating to 600A Peak
* Low Reverse Leakage Current
* Pb / RoHS Free
1.00 (25.4)
0.052 (1.32)
MIN.
0.048 (1.22)
MECHANICAL DATA :
* Case : molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.049 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
10A01 10A02 10A03 10A04 10A05 10A06 10A07
SYMBOL
UNIT
VRRM
VRMS
VDC
IO
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
10
600
420
600
800
560
800
1000
700
V
V
Maximum DC Blocking Voltage
100
1000
V
Average Rectified Output Current (Note 1) Ta = 50°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single half sine wave superimposed on rated load
(JEDEC Method)
A
IFSM
600
A
VF
IR
Maximum Forward Voltage at IF = 10 Amps.
1.3
10
V
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
mA
mA
pF
IR(H)
100
Ta = 100 °C
150
80
Typical Junction Capacitance (Note 2)
Thermal Resistance
Cj
RqJC
0.8
°C/W
°C
TJ, TSTG
Operating and Storage Temperature Range
- 65 to + 150
Notes :
(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.
(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.
Page 1 of 2
Rev. 01 : October 27, 2005
RATING AND CHARACTERISTIC CURVES ( 10A01 - 10A07 )
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1000
10
8.3 ms Single Half Sine-Wave
JEDC Method
800
8.0
600
400
6.0
4.0
2.0
200
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL JUNCTION CAPACITANCE
100
10
100
TJ = 25 °C
f = 1MHz
10A01-10A04
10
10A05-10A07
Pulse Width = 300 ms
2% Duty Cycle
1.0
0.1
1.0
0.1
TJ = 25 °C
0
10
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
REVERSE VOLTAGE (V)
Page 2 of 2
Rev. 01 : October 27, 2005
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