概述
规格参数
数据手册RTD50 概述
100mA SILICON CARTRIDGE RECTIFIERS 百毫安硅盒RECTIFIERS 整流二极管
RTD50 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | O-PALF-W2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.70 | 风险等级： | 5.74 |
| Is Samacsys： | N | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | 最大正向电压 (VF)： | 100 V |
| JESD-30 代码： | O-PALF-W2 | 最大非重复峰值正向电流： | 10 A |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 125 °C | 最大输出电流： | 0.1 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 50000 V | 最大反向恢复时间： | 0.2 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | NO |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| Base Number Matches： | 1 |
RTD50 数据手册
通过下载RTD50数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BCD RTD
100mA SILICON CARTRIDGE RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 60,000 VOLTS
FAST RECOVERY (RTD SERIES)
LOW LEAKAGE
Peak
Max. Forward Voltage
EDI Type
Number
Leng th
L
o
Reve rse Volta ge
PRV (Volts )
Drop at 25 C And 100 mA
Fig. 3
VF (Vol ts)
STANDARD RECOVERY
BCD08
BCD10
BCD12
BCD15
BCD20
BCD25
BCD30
BCD35
BCD40
BCD45
BCD50
BCD60
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,000
30,0 00
35,0 00
40,0 00
45,0 00
50,0 00
60,0 00
13
13
13
20
26
33
40
46
53
60
66
73
1.00
1.00
1.00
1.63
2.13
2.63
3.13
3.63
4.13
4.63
5.13
6.13
200 NANOSE COND RECOVE RY (F IG.4)
RTD08
RTD10
RTD12
RTD15
RTD20
RTD25
RTD30
RTD35
RTD40
RTD45
RTD50
RTD60
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,0 00
30,0 00
35,0 00
40,0 00
45,0 00
50,0 00
60,0 00
20
20
1.00
1.00
1.00
1.63
2.13
2.63
3.13
3.63
4.13
4.63
5.13
6.13
20
30
40
50
60
70
80
90
100
110
RTD SERIES
FAST
BCD SERIES
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
STANDARD
RECOVERY
(at TA
=25 C Unless Otherwise Specified)
(at T
A
=25 C Unless Otherwise Specified)
RECOVERY
o
o
Max. DC Reverse Current@ PRV and25 C, I
A
2
C, I
A
2
Max. DC Reverse Current @ PRV and 25
Max. DC Reverse Current@ PRV and100
Max. Reverse Recovery Time , Trr (Fig.4)
R
R
o
o
C, I
A
C, I
Max. DC Reverse Current@ PRV and100
A
R
100
R
100
o
o
to +125
C
Ambient Operating Temperature Range,T
A
200 nanosec
-55
-55
C
o
o
to +150
C
o
o
to +125
C
Ambient Operating Temperature Range,TA
Storage Temperature Range, T
STG
C
-55
-55
C
o
o
to +150
C
Max.One-Half Cycle Surge Current,
IFM
Storage Temperature Range, T
STG
C
Amps
10
(Surge )@ 60Hz
Max.One-HalfCycle Surge Current,
IFM
10 Amps
(Surge )@ 60Hz
Forward Current Repetitive Peak,I FRM
Amps
3
Amps
3
Forward Current Repetitive Peak,IFRM
EDI reserves the right to change these specifications at any time without notice.
BCD RTD
FIG.1
FIG.2
OUTPUT CURRENT vs AMBIENT TEMPERATURE
NON-REPETITIVE SURGE CURRENT RATINGS
100
0.1SEC
1.0SEC
100
75
75
50
50
25
25
0
0
0
25
50
75
100
125
150
O
( C)
1
2
3
4
5
6
7 8 9 10
20
30 40 50 60
AMBIENT TEMPERATURE
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
.030
.033
DIA.
_
+
0.39 MAX. DIA.
1.0 MIN.
L
.02
ALL DIMENSIONS IN INCHES
O
Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250
C
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
R
1
T
RR
D.U.T.
50 OHM
PULSE
GENERATOR
-
ZERO
SCOPE
R
2
REFERENCE
150mA
1 OHM
300mA
R R
1, 2 NON-INDUCTIVE RESISTORS
75 mA
PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
Reverse recovery time measured on individual rectifiers prior to assembly.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE YONKERS. NEW YORK 10710 914-965-4400 FAX 914-965-5531 * 1-800-678-0828
Ee-mail:sales@edidiodes.com
*
*
*
Wwebsite:http://www.edidiodes.com
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