TF91316C [DYNEX]
Fast Switching Thyristor; 快速开关晶闸管型号: | TF91316C |
厂家: | Dynex Semiconductor |
描述: | Fast Switching Thyristor |
文件: | 总13页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TF913..C
Fast Switching Thyristor
Replaces March 1998 version, DS4278-2.2
DS4278-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt 300V/µs
dI/dt
2000V
1300A
17000A
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
500A/µs
tq
50µs
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
Type Number
Repetitive
Peak
Conditions
Voltages
VDRM VRRM
TF913 20C
TF913 18C
TF913 16C
2000
1800
1600
VRSM = VRRM + 100V
IDRM = IRRM = 60mA
at VRRM or VDRM & Tvj
Lower voltage grades available.
Outline type code: MU169.
See Package Details for further information.
CURRENT RATINGS
Symbol
IT(AV)
Parameter
Conditions
Max.
Units
Half sinewave, 50Hz, Tcase = 80oC
828
A
Mean on-state current
RMS value
IT(RMS)
Half sinewave, 50Hz, Tcase = 80oC
1300
A
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TF913..C
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
17.0
Units
kA
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine; VR = 0% VRRM, Tj = 125˚C
10ms half sine; VR = 0% VRRM, Tj = 125˚C
1445 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Parameter
Symbol
0.020 oC/W
dc
-
-
Double side cooled
Rth(j-c)
Anode dc
-
-
oC/W
oC/W
Thermal resistance - junction to case
Single side cooled
Cathode dc
-
-
0.006 oC/W
Double side
Clamping force 23.5kN
Thermal resistance - case to heatsink
Virtual junction temperature
Rth(c-h)
with mounting compound
Single side
-
-
0.012
125
oC/W
oC
On-state (conducting)
Reverse (blocking)
Tvj
-
125
oC
Tstg
-
Storage temperature range
Clamping force
-40
150
oC
22.3
24.6
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
0.5x IRR
dIR/dt
IRR
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TF913..C
DYNAMIC CHARACTERISTICS
Symbol
VTM
Parameter
Maximum on-state voltage
Conditions
At 2000A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
Min.
Max. Units
-
-
2.15
60
300
500
800
1.25
0.45
-
V
IRRM/IDRM
dV/dt
Peak reverse and off-state current
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage Linear to 60% VDRM T = 125oC, Gate open circuit
-
j
Repetitive 50Hz
-
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
-
tr ≤ 0.5µs, Tj = 125˚C
At Tvj = 125oC
Non-repetitive
VT(TO)
rT
Threshold voltage
On-state slope resistance
Delay time
-
At Tvj = 125oC
-
mΩ
µs
Tj = 25˚C, IT = 50A,
tgd
4*
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
t(ON)TOT
Total turn-on time
Holding current
Latching current
2*
100*
300*
-
-
µs
mA
mA
µs
IH
IL
Tj = 25oC, ITM = 1A, VD = 12V
-
Tj = 25oC, IG = 0.5A, VD = 12V
-
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
dIR/dt = 50A/µs, Gate open circuit
tq code: C
50
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
Typ.
Max. Units
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 1kΩ
-
-
3.0
V
200
mA
IGT
Gate trigger current
VGD
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
-
-
-
-
-
0.2
5.0
10
50
3
V
V
VRGM
IFGM
Anode positive with respect to cathode
A
PGM
W
W
PG(AV)
Mean gate power
3/13
TF913..C
CURVES
4/13
TF913..C
5/13
TF913..C
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
6/13
TF913..C
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
7/13
TF913..C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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TF913..C
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
9/13
TF913..C
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
10/13
TF913..C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
11/13
TF913..C
PACKAGE DETAILS - MU169
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.1 approx (one in each electrode)
Cathode tab
Ø74 max
Ø46 min
Cathode
Ø1.5
Gate
Ø46 min
Ø68 max
Anode
Nominal weight: 500g
Clamping force: 23.5kN ±10%
Lead length: 250mm
Package outine type code: MU169
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
AN4506
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
AN4840
AN4839
AN4870
AN4853
AN4999
Use of VTO, rT on-state characteristic
AN5001
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TF913..C
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4278-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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