MP03HBT130-20 [DYNEX]
Silicon Controlled Rectifier, 210A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 2 Element;
| 型号： | MP03HBT130-20 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Silicon Controlled Rectifier, 210A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 2 Element 局域网 栅 栅极 |
| 文件： | 总10页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP03 XXX 130 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4480-3.0
DS4480-4.0 January 2000
FEATURES
KEY PARAMETERS
VDRM
ITSM
IT(AV)(per arm)
Visol
2000V
4000A
134A
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
2500V
CIRCUIT OPTIONS
Code
Circuit
HBT
APPLICATIONS
■ Motor Control
HBP
HBN
■ Controlled Rectifier Bridges
■ Heater Control
■ AC Phase Control
VOLTAGE RATINGS
PACKAGE OUTLINE
Type
Number
Repetitive
Peak
Conditions
Voltages
VDRM VRRM
MP03/130-20
MP03/130-18
MP03/130-16
2000
1800
1600
Tvj = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM
=
VDRM & VRRM + 100V
respectively
Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.
Module type code: MP03.
See Package Details for futher information.
CURRENT RATINGS - PER ARM
Parameter
Conditions
Units
Symbol
Max.
134
112
114
Tcase = 75oC
Tcase = 85oC
Theatsink = 75oC
Theatsink = 85oC
A
A
A
Mean on-state current
Halfwave, resistive load
Tcase = 75oC
IT(AV)
95
A
A
IT(RMS)
RMS value
210
1/10
MP03 XXX 130 Series
SURGE RATINGS - PER ARM
Parameter
Units
A
Symbol
Conditions
Max.
4000
3200
80000
VR = 0
10ms half sine;
ITSM
Surge (non-repetitive) on-state current
I2t for fusing
Tj = 125oC
VR = 50% VRRM
VR = 0
A
A2s
10ms half sine;
Tj = 125oC
I2t
VR = 50% VRRM
51200
A2s
THERMAL & MECHANICAL RATINGS
Parameter
Max.
0.21
0.22
Symbol
Conditions
Units
oC/W
dc
Thermal resistance - junction to case
per Thyristor or Diode
Rth(j-c)
halfwave
3 phase
oC/W
oC/W
0.23
0.05
Mounting torque = 5Nm
with mounting compound
Thermal resistance - case to heatsink
per Thyristor or Diode
oC/W
Rth(c-hs)
Tvj
Virtual junction temperature
Storage temperature range
oC
oC
125
-40 to 125
Tsto
Commoned terminals to base plate
AC RMS, 1min, 50Hz
2.5
kV
Visol
Isolation voltage
DYNAMIC CHARACTERISTICS
Symbol
Parameter
On-state voltage
Conditions
Max.
Units
At 450A, Tcase = 25oC - See Note 1
1.90
V
VTM
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
To 60% VDRM Tj = 125oC
30
mA
Linear rate of rise of off-state voltage
dV/dt
200*
V/µs
From 67% VDRM to 400A
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC
Repetitive 50Hz
100
A/µs
Rate of rise of on-state current
dI/dt
VT(TO)
rT
Threshold voltage
At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1
1.25
1.33
V
On-state slope resistance
mΩ
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10
MP03 XXX 130 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Gate trigger voltage
Typ. Max.
Units
Symbol
VGT
Conditions
VDRM = 5V, Tcase = 25oC
-
-
-
-
-
-
-
-
-
V
mA
V
3.0
200
0.2
30
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
VGD
VDRM = 5V, Tcase = 25oC
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
V
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
0.25
5.0
4
V
V
Anode positive with respect to cathode
A
PGM
16
W
W
PG(AV)
Mean gate power
3
ORDERING INSTRUCTIONS
Examples:
Part number is made up as follows:
MP03 HBP130-16
MP03 HBN130-20
MP03 HBT130-16
MP03 HBT 130 - 18
MP = Pressure contact module
03
= Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
130 = Nominal average current rating at Tcase = 75oC
18
= VRRM/100
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of VT(TO) and rT
information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
3/10
MP03 XXX 130 Series
CURVES
1000
800
600
400
200
0
Tj = 125˚C
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VT - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
50
10
Tj = 25˚C
Tj = -40˚C
Tj = 125˚C
1
0.1
0.01
0.1
Gate current IG - (A)
Fig. 2 Gate trigger characteristics
1
10
4/10
MP03 XXX 130 Series
0.3
0.2
0.1
0
Rth(j-hs)
Rth(j-c)
0.001
0.010
0.100
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
10
9
8
7
6
5
4
3
2
1
0
60
50
40
I2t
30
20
10
0
10
1
2 3 4 5
50
1
ms
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
5/10
MP03 XXX 130 Series
400
350
300
250
200
150
100
50
180˚
120˚
90˚
60˚
30˚
0
0
25
50
75
100
125
150
Mean on-state current - (A)
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
400
350
300
180˚
250
120˚
d.c.
90˚
200
60˚
150
100
50
30˚
0
0
25
50
75
100
125
150
Mean on-state current - (A)
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
6/10
MP03 XXX 130 Series
140
120
100
80
60
40
20
90˚
30˚
75
60˚
120˚
125
180˚
150
0
0
25
50
100
Mean on-state current - (A)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
80
60
40
20
90˚ 120˚
100 125
30˚
60˚
180˚
d.c.
0
0
25
50
75
150
Mean on-state current - (A)
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 130 Series
600
R - Load
0.10 0.08 0.04 0.02
0.12
0.15
0.20
0.30
500
400
300
200
100
0
Rth(hs-a) ˚C/W
L - Load
0.40
20
0
40
60
80 100
0
50
100
200
150
D.C. output current - (A)
Maximum ambient temperature - (˚C)
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
600
0.10
0.15 0.12 0.08
R & L- Load
0.04
0.02
Rth(hs-a) ˚C/W
500
400
300
200
100
0
0.20
0.30
0.40
20
0
40
60
80 100
0
50
100
200
150
D.C. output current - (A)
Maximum ambient temperature - (˚C)
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 130 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
K2
G2
G1
K1
80
2.8x0.8
2
3
3x M8
1
92
Recommended fixings for mounting:
Recommended mounting torque:
M5 socket head cap screws.
5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections:
Nominal weight: 950g
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G K
1 1
K
G
2
2
1
1
1
2
3
HBT
G K
1 1
2
3
HBP
2
K
G
2
2
3
HBN
9/10
MP03 XXX 130 Series
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
Thyristor and diode measurement with a multi-meter
Use of VTO, rT on-state characteristic
AN4506
AN4853
AN5001
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4480-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
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