DS2103SV24 [DYNEX]
Rectifier Diode, 1 Phase, 1 Element, 5788A, 2400V V(RRM), Silicon, V, 2 PIN;
| 型号： | DS2103SV24 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 5788A, 2400V V(RRM), Silicon, V, 2 PIN 二极管 |
| 文件： | 总8页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS2103SY/DS2103SV
Rectifier Diode
Replaces December 2001 version, DS4172-5.1
DS4172-6.0 February 2003
FEATURES
KEY PARAMETERS
I Double Side Cooling
I High Surge Capability
VRRM 2600V
IF(AV) 5788A
IFSM 81000A
APPLICATIONS
I Rectification
I Freewheel Diode
I DC Motor Control
I Power Supplies
I Welding
I Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Conditions
Reverse Voltage
VRRM
V
DS2103SY26
DS2103SY25
DS2103SY24
DS2103SY23
DS2103SY22
DS2103SY21
VRSM = VRRM + 100V
2600
2500
2400
2300
2200
2100
Outline type code: V
Outline type code: Y
See Package Details for further information.
Fig. 1 Package outlines
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2103SY22 for a 2200V device in a Y outline
or
DS2103SV22 for a 2200V device in a V outline
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DS2103SY/DS2103SV
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
IF(RMS)
IF
Half wave resistive load
5788
9076
8278
A
A
A
Mean forward current
RMS value
-
-
Continuous (direct) forward current
Single Side Cooled (Anode side)
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Half wave resistive load
3751
5892
4955
A
A
A
-
-
Continuous (direct) forward current
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load
4785
7516
6725
A
A
A
-
-
Single Side Cooled (Anode side)
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Half wave resistive load
3060
4807
3950
A
A
A
-
-
Continuous (direct) forward current
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DS2103SY/DS2103SV
SURGE RATINGS
Parameter
Conditions
10ms half sine; Tcase = 175oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase =175oC
VR = 0
Max.
65.0
Units
kA
Symbol
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
21.1 x 106
81.0
A2s
kA
Surge (non-repetitive) forward current
I2t for fusing
IFSM
I2t
33 x 106
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.0095 oC/W
0.019 oC/W
Parameter
Symbol
dc
Double side cooled
-
-
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
Cathode dc
Double side
-
0.019 oC/W
0.002 oC/W
-
Clamping force 43.0kN
with mounting compound
Thermal resistance - case to heatsink
Virtual junction temperature
Rth(c-h)
Single side
-
0.004
200
oC/W
oC
Forward (conducting)
Reverse (blocking)
-
-
Tvj
175
oC
Tstg
-
Storage temperature range
Clamping force
–55
175
oC
38.0
47.0
kN
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DS2103SY/DS2103SV
CHARACTERISTICS
Symbol
VFM
IRM
Parameter
Conditions
At 3000A peak, Tcase = 25oC
At VRRM, Tcase = 175oC
Min.
Max. Units
Forward voltage
-
-
-
-
-
-
1.05
150
V
mA
µC
A
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
3000
125
QS
IF = 2000A, dIRR/dt = 3A/µs
Tcase = 175˚C, VR = 100V
Irr
VTO
rT
At Tvj = 175˚C
At Tvj = 175˚C
0.75
0.063
V
Slope resistance
mΩ
CURVES
10000
12000
10000
8000
6000
4000
2000
0
Measured under pulse conditions
Tj = 175˚C
8000
6000
4000
2000
0
dc
Half wave
3 phase
6 phase
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2000
4000
6000
8000
10000
Instantaneous forward voltage, VF - (V)
Mean forward current, IF(AV) - (A)
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
VFM Equation:-
Where
A = –0.51826
B = 0.195881
C = 6.39 x 10–5
D = –0.00544
VFM = A + Bln (IF) + C.IF+D.√IF
these values are valid for Tj = 175˚C for IF 500A to 9000A
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DS2103SY/DS2103SV
140
120
100
80
1000
100000
10000
1000
I
Conditions:
Tj = 175˚C
VR = 100V
IF = 2000A
F
I2t = Î2 x t
2
Q
S
20
dI /dt
F
I
RR
15
10
5
Max. IRR
100
I2t
Max. QS
60
40
20
1
0
10
100
10
1
2
3
5
10 20
50
0.1
1.0
10
Rate of decay of forward current, dI/dt - (A/µs)
ms
Cycles at 50Hz
Duration
Fig.4 Total stored charge and maximum reverse
recovery current
Fig.5 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 175˚C)
0.1
Anode side cooled
Double side cooled
0.01
0.001
Effective thermal resistance
Junction to case ˚C/W
Conduction
Double side
0.0095
0.0105
Single side
0.019
0.020
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0112
0.0139
0.0207
0.0234
0.0001
0.001
0.01
0.1
Time - (s)
1
10
100
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
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DS2103SY/DS2103SV
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1600g
Clamping force: 43kN 10%
Package outline type code: Y
Note:
Some packages may be supplied with gate pins and/or tags.
6/8
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DS2103SY/DS2103SV
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN 10%
Package outline type code: V
Note:
Some packages may be supplied with gate pins and/or tags.
7/8
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
Fax: +44-(0)1522-500550
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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