DK13FX [DYNEX]
Fast Switching Thyristor; 快速开关晶闸管
| 型号： | DK13FX |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Fast Switching Thyristor |
| 文件： | 总13页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DK13..FX
Fast Switching Thyristor
Replaces January 2000 version, DS4411-2.0
DS4411-3.0 July 2001
FEATURES
KEY PARAMETERS
VDRM 1200V
IT(RMS) 130A
ITSM 1600A
■ Low Switching Losses At High Frequency
■ Fully Characterised For Operation Up To 20kHz
APPLICATIONS
dVdt 200V/µs
dI/dt 500A/µs
■ High Power Inverters And Choppers
■ UPS
tq
15µs
■ AC Motor Drives
■ Induction Heating
■ Cycloconverters
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
Conditions
VDRM VRRM
V
1200
1000
DK13 12FX K or M
DK13 10FX K or M
VRSM = VRRM + 100V
IDRM = IRRM = 15mA
at VRRM or VDRM & Tvj
Outline type code: TO94
See Package Details for further information.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Fig. 1 Package outline
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 10FXK
or
Add M to type number for M12 thread, e.g. DK13 10FXM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DK13..FX
CURRENT RATINGS
Symbol
Parameter
Mean on-state current
RMS value
Conditions
Half wave resistive load, Tcase = 80oC
Tcase = 80oC
Max.
83
Units
IT(AV)
A
A
130
IT(RMS)
SURGE RATINGS
Parameter
Conditions
Max.
1.6
Units
kA
Symbol
tp ≥ 10ms half sine; Tcase = 125oC
VR = 0% VRRM - 1/4 sine
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
12.8 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Symbol
Rth(j-c)
Parameter
oC/W
oC/W
dc
Thermal resistance - junction to case
Thermal resistance - case to heatsink
-
-
0.24
0.08
Mounting torque 15.0Nm
with mounting compound
Rth(c-h)
On-state (conducting)
Reverse (blocking)
-
-
125
125
150
oC
oC
oC
Tvj
Virtual junction temperature
Tstg
-
Storage temperature range
Mounting torque
-40
12.0
15.0
Nm
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
0.5x IRR
dIR/dt
IRR
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DK13..FX
DYNAMIC CHARACTERISTICS
Symbol
VTM
Parameter
Maximum on-state voltage
Conditions
At 300A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
Min.
Max. Units
-
-
-
-
-
-
-
-
2.35
15
V
IRRM/IDRM
dV/dt
Peak reverse and off-state current
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage Linear to 60% VDRM T = 125oC, Gate open circuit
200
500
800
1.5
2.83
5
j
Repetitive 50Hz
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
tr < 0.5µs, Tj = 125˚C
At Tvj = 125oC
Non-repetitive
VT(TO)
rT
Threshold voltage
On-state slope resistance
Delay time
At Tvj = 125oC
mΩ
µs
Tj = 25˚C, IT = 50A,
tgd
VD = 300V, IG = 1A,
Total turn-on time
Holding current
dI/dt =50A/µs, dIG/dt = 1A/µs
-
60*
-
3
-
µs
mA
µs
t(ON)TOT
IH
Tj = 25oC, ITM = 1A, VD = 12V
Tj = 125˚C, IT = 100A, VR = 50V,
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
tq code: X
15
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
Typ.
Max. Units
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 1kΩ
-
-
3.0
V
200
mA
IGT
Gate trigger current
VGD
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
-
-
-
-
-
0.2
5.0
4
V
V
VRGM
IFGM
Anode positive with respect to cathode
A
PGM
16
3.0
W
W
PG(AV)
Mean gate power
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DK13..FX
CURVES
Fig.3 Gate characteristics
Fig.2 Maximum (limit) on-state characteristics
Fig.4 Typical recovered charge (for a device rated VDRM = 600V, tq = 10µs)
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DK13..FX
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating
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NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.7 Energy per pulse for sinusoidal pulses
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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DK13..FX
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.10 Energy per pulse for trapezoidal pulses
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DK13..FX
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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DK13..FX
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.13 Energy per pulse for trapezoidal pulses
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.14 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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DK13..FX
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.15 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.16 Energy per pulse for trapezoidal pulses
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DK13..FX
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.17 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.18 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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DK13..FX
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø4
15 max
Ø8.4 ± 0.3
8 min
30 max
8 min
K = 20.6 ± 0.6
M = M12
M = 18.0 ± 0.5
K = 1/2" 20 UNF
Nominal weight: 120g
Mounting torque: 15Nm ±10%
Gate lead colour: White
Cathode lead colour: Red
Package outine type code: TO94
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DK13..FX
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Discdevicesrequirethecorrectclampingforcetoensuretheirsafeoperation. ThePACSrangeincludesavariedselectionofpre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Fax: 00-44-(0)1522-500550
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4411-4 Issue No. 3.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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